Brand/Series |
IRF Series |
|
Capacitance, Input |
660 pF @ 25 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Single |
|
Current, Drain |
2.5 A |
|
Dimensions |
10.63 x 4.83 x 16.12 mm |
|
Gate Charge, Total |
31 nC |
|
Height |
0.635" (16.12mm) |
|
Length |
0.418" (10.63mm) |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-220 |
|
Polarization |
N-Channel |
|
Power Dissipation |
35 W |
|
Resistance, Drain to Source On |
2.2 Ω |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Time, Turn-Off Delay |
35 ns |
|
Time, Turn-On Delay |
11 ns |
|
Transconductance, Forward |
2.2 S |
|
Typical Gate Charge @ Vgs |
Maximum of 31 nC @ 10 V |
|
Voltage, Breakdown, Drain to Source |
600 V |
|
Voltage, Drain to Source |
600 V |
|
Voltage, Forward, Diode |
1.6 V |
|
Voltage, Gate to Source |
±20 V |
|
Width |
0.19" (4.83mm) |
|
關(guān)鍵詞 |