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IRFD9014PBF - 

MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.5Ohm; ID -1.1A; HD-1; PD 1.3W; VGS +/-20V; -55

Vishay PCS IRFD9014PBF
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制造商產(chǎn)品編號(hào):
IRFD9014PBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70079055
技術(shù)數(shù)據(jù)表:
View IRFD9014PBF Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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IRFD9014PBF產(chǎn)品概述

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W.

Features:
  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • For Automatic Insertion
  • End Stackable
  • P-Channel
  • 175°C Operating Temperature
  • Fast Switching
  • Lead (Pb)-Free Available
  • IRFD9014PBF產(chǎn)品信息

      Brand/Series  IRF Series  
      Capacitance, Input  270 pF @ -25 V  
      Channel Mode  Enhancement  
      Channel Type  P  
      Configuration  Single  
      Current, Drain  -0.8 A  
      Dimensions  6.29 x 5 x 3.37 mm  
      Gate Charge, Total  12 nC  
      Height  0.133" (3.37mm)  
      Length  0.247" (6.29mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  4  
      Package Type  HVMDIP  
      Polarization  P-Channel  
      Power Dissipation  1.3 W  
      Resistance, Drain to Source On  0.5 Ω  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +175 °C  
      Time, Turn-Off Delay  10 ns  
      Time, Turn-On Delay  11 ns  
      Transconductance, Forward  0.7 S  
      Typical Gate Charge @ Vgs  Maximum of 12 nC @ -10 V  
      Voltage, Breakdown, Drain to Source  -60 V  
      Voltage, Drain to Source  -60 V  
      Voltage, Forward, Diode  -5.5 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.197" (5mm)  
    關(guān)鍵詞         

    IRFD9014PBF相關(guān)搜索

    Brand/Series IRF Series  Vishay PCS Brand/Series IRF Series  MOSFET Transistors Brand/Series IRF Series  Vishay PCS MOSFET Transistors Brand/Series IRF Series   Capacitance, Input 270 pF @ -25 V  Vishay PCS Capacitance, Input 270 pF @ -25 V  MOSFET Transistors Capacitance, Input 270 pF @ -25 V  Vishay PCS MOSFET Transistors Capacitance, Input 270 pF @ -25 V   Channel Mode Enhancement  Vishay PCS Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Vishay PCS MOSFET Transistors Channel Mode Enhancement   Channel Type P  Vishay PCS Channel Type P  MOSFET Transistors Channel Type P  Vishay PCS MOSFET Transistors Channel Type P   Configuration Single  Vishay PCS Configuration Single  MOSFET Transistors Configuration Single  Vishay PCS MOSFET Transistors Configuration Single   Current, Drain -0.8 A  Vishay PCS Current, Drain -0.8 A  MOSFET Transistors Current, Drain -0.8 A  Vishay PCS MOSFET Transistors Current, Drain -0.8 A   Dimensions 6.29 x 5 x 3.37 mm  Vishay PCS Dimensions 6.29 x 5 x 3.37 mm  MOSFET Transistors Dimensions 6.29 x 5 x 3.37 mm  Vishay PCS MOSFET Transistors Dimensions 6.29 x 5 x 3.37 mm   Gate Charge, Total 12 nC  Vishay PCS Gate Charge, Total 12 nC  MOSFET Transistors Gate Charge, Total 12 nC  Vishay PCS MOSFET Transistors Gate Charge, Total 12 nC   Height 0.133" (3.37mm)  Vishay PCS Height 0.133" (3.37mm)  MOSFET Transistors Height 0.133" (3.37mm)  Vishay PCS MOSFET Transistors Height 0.133" (3.37mm)   Length 0.247" (6.29mm)  Vishay PCS Length 0.247" (6.29mm)  MOSFET Transistors Length 0.247" (6.29mm)  Vishay PCS MOSFET Transistors Length 0.247" (6.29mm)   Mounting Type Through Hole  Vishay PCS Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Vishay PCS MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Vishay PCS Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Vishay PCS MOSFET Transistors Number of Elements per Chip 1   Number of Pins 4  Vishay PCS Number of Pins 4  MOSFET Transistors Number of Pins 4  Vishay PCS MOSFET Transistors Number of Pins 4   Package Type HVMDIP  Vishay PCS Package Type HVMDIP  MOSFET Transistors Package Type HVMDIP  Vishay PCS MOSFET Transistors Package Type HVMDIP   Polarization P-Channel  Vishay PCS Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Vishay PCS MOSFET Transistors Polarization P-Channel   Power Dissipation 1.3 W  Vishay PCS Power Dissipation 1.3 W  MOSFET Transistors Power Dissipation 1.3 W  Vishay PCS MOSFET Transistors Power Dissipation 1.3 W   Resistance, Drain to Source On 0.5 Ω  Vishay PCS Resistance, Drain to Source On 0.5 Ω  MOSFET Transistors Resistance, Drain to Source On 0.5 Ω  Vishay PCS MOSFET Transistors Resistance, Drain to Source On 0.5 Ω   Temperature, Operating, Maximum +175 °C  Vishay PCS Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Vishay PCS MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  Vishay PCS Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Vishay PCS MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  Vishay PCS Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  Vishay PCS MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Time, Turn-Off Delay 10 ns  Vishay PCS Time, Turn-Off Delay 10 ns  MOSFET Transistors Time, Turn-Off Delay 10 ns  Vishay PCS MOSFET Transistors Time, Turn-Off Delay 10 ns   Time, Turn-On Delay 11 ns  Vishay PCS Time, Turn-On Delay 11 ns  MOSFET Transistors Time, Turn-On Delay 11 ns  Vishay PCS MOSFET Transistors Time, Turn-On Delay 11 ns   Transconductance, Forward 0.7 S  Vishay PCS Transconductance, Forward 0.7 S  MOSFET Transistors Transconductance, Forward 0.7 S  Vishay PCS MOSFET Transistors Transconductance, Forward 0.7 S   Typical Gate Charge @ Vgs Maximum of 12 nC @ -10 V  Vishay PCS Typical Gate Charge @ Vgs Maximum of 12 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 12 nC @ -10 V  Vishay PCS MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 12 nC @ -10 V   Voltage, Breakdown, Drain to Source -60 V  Vishay PCS Voltage, Breakdown, Drain to Source -60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V  Vishay PCS MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V   Voltage, Drain to Source -60 V  Vishay PCS Voltage, Drain to Source -60 V  MOSFET Transistors Voltage, Drain to Source -60 V  Vishay PCS MOSFET Transistors Voltage, Drain to Source -60 V   Voltage, Forward, Diode -5.5 V  Vishay PCS Voltage, Forward, Diode -5.5 V  MOSFET Transistors Voltage, Forward, Diode -5.5 V  Vishay PCS MOSFET Transistors Voltage, Forward, Diode -5.5 V   Voltage, Gate to Source ±20 V  Vishay PCS Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Vishay PCS MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.197" (5mm)  Vishay PCS Width 0.197" (5mm)  MOSFET Transistors Width 0.197" (5mm)  Vishay PCS MOSFET Transistors Width 0.197" (5mm)  
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