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SKM500GA128E4 - 

IGBT; D-59; IGBT; 400 A; 1200 V; 20 V; 5.5 V (Typ.)

SEMIKRON SKM500GA128E4
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制造商產(chǎn)品編號:
SKM500GA128E4
倉庫庫存編號:
70098167
技術(shù)數(shù)據(jù)表:
View SKM500GA128E4 Datasheet Datasheet
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SKM500GA128E4產(chǎn)品概述

IGBT Module Transistors

SKM500GA128E4產(chǎn)品信息

  Brand/Series  IGBT Series  
  Capacitance, Gate  35 nF  
  Channel Type  N  
  Configuration  Single  
  Current, Collector  700 A  
  Current, Continuous Collector  700 A  
  Dimensions  106.4 x 61.4 x 36.5 mm  
  Energy Rating  85 mJ  
  Fall Time  80 nS (Typ.)  
  Height  1.437" (36.5mm)  
  Length  4.188" (106.4mm)  
  Mounting Type  Screw  
  Number of Pins  4  
  Operating and Storage Temperature  -40 to 150°C (Operating), -40 to 125°C (Storage)  
  Package Type  D 59  
  Polarity  N-Channel  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  0.047 K/W  
  Switching Loss  37 mJ (Typ.)  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -40 °C  
  Temperature, Operating, Range  -40 to +150 °C  
  Time, Rise  80 nS (Typ.)  
  Transistor Type  IGBT  
  Type  SPT  
  Voltage, Breakdown, Collector to Emitter  1200  
  Voltage, Collector to Emitter  1200 V  
  Voltage, Collector to Emitter Shorted  1200 V  
  Voltage, Gate Threshold, Range  5.5 V (Typ.)  
  Voltage, Gate to Emitter  ±20 V  
  Voltage, Saturation, Collector to Emitter  1200 V  
  Width  2.417" (61.4mm)  
關(guān)鍵詞         

SKM500GA128E4相關(guān)搜索

Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Capacitance, Gate 35 nF  SEMIKRON Capacitance, Gate 35 nF  IGBT Transistor Modules Capacitance, Gate 35 nF  SEMIKRON IGBT Transistor Modules Capacitance, Gate 35 nF   Channel Type N  SEMIKRON Channel Type N  IGBT Transistor Modules Channel Type N  SEMIKRON IGBT Transistor Modules Channel Type N   Configuration Single  SEMIKRON Configuration Single  IGBT Transistor Modules Configuration Single  SEMIKRON IGBT Transistor Modules Configuration Single   Current, Collector 700 A  SEMIKRON Current, Collector 700 A  IGBT Transistor Modules Current, Collector 700 A  SEMIKRON IGBT Transistor Modules Current, Collector 700 A   Current, Continuous Collector 700 A  SEMIKRON Current, Continuous Collector 700 A  IGBT Transistor Modules Current, Continuous Collector 700 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 700 A   Dimensions 106.4 x 61.4 x 36.5 mm  SEMIKRON Dimensions 106.4 x 61.4 x 36.5 mm  IGBT Transistor Modules Dimensions 106.4 x 61.4 x 36.5 mm  SEMIKRON IGBT Transistor Modules Dimensions 106.4 x 61.4 x 36.5 mm   Energy Rating 85 mJ  SEMIKRON Energy Rating 85 mJ  IGBT Transistor Modules Energy Rating 85 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 85 mJ   Fall Time 80 nS (Typ.)  SEMIKRON Fall Time 80 nS (Typ.)  IGBT Transistor Modules Fall Time 80 nS (Typ.)  SEMIKRON IGBT Transistor Modules Fall Time 80 nS (Typ.)   Height 1.437" (36.5mm)  SEMIKRON Height 1.437" (36.5mm)  IGBT Transistor Modules Height 1.437" (36.5mm)  SEMIKRON IGBT Transistor Modules Height 1.437" (36.5mm)   Length 4.188" (106.4mm)  SEMIKRON Length 4.188" (106.4mm)  IGBT Transistor Modules Length 4.188" (106.4mm)  SEMIKRON IGBT Transistor Modules Length 4.188" (106.4mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Number of Pins 4  SEMIKRON Number of Pins 4  IGBT Transistor Modules Number of Pins 4  SEMIKRON IGBT Transistor Modules Number of Pins 4   Operating and Storage Temperature -40 to 150°C (Operating), -40 to 125°C (Storage)  SEMIKRON Operating and Storage Temperature -40 to 150°C (Operating), -40 to 125°C (Storage)  IGBT Transistor Modules Operating and Storage Temperature -40 to 150°C (Operating), -40 to 125°C (Storage)  SEMIKRON IGBT Transistor Modules Operating and Storage Temperature -40 to 150°C (Operating), -40 to 125°C (Storage)   Package Type D 59  SEMIKRON Package Type D 59  IGBT Transistor Modules Package Type D 59  SEMIKRON IGBT Transistor Modules Package Type D 59   Polarity N-Channel  SEMIKRON Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  SEMIKRON IGBT Transistor Modules Polarity N-Channel   Primary Type Si  SEMIKRON Primary Type Si  IGBT Transistor Modules Primary Type Si  SEMIKRON IGBT Transistor Modules Primary Type Si   Resistance, Thermal, Junction to Case 0.047 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.047 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.047 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.047 K/W   Switching Loss 37 mJ (Typ.)  SEMIKRON Switching Loss 37 mJ (Typ.)  IGBT Transistor Modules Switching Loss 37 mJ (Typ.)  SEMIKRON IGBT Transistor Modules Switching Loss 37 mJ (Typ.)   Temperature, Operating, Maximum +150 °C  SEMIKRON Temperature, Operating, Maximum +150 °C  IGBT Transistor Modules Temperature, Operating, Maximum +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -40 °C  SEMIKRON Temperature, Operating, Minimum -40 °C  IGBT Transistor Modules Temperature, Operating, Minimum -40 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +150 °C  SEMIKRON Temperature, Operating, Range -40 to +150 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C   Time, Rise 80 nS (Typ.)  SEMIKRON Time, Rise 80 nS (Typ.)  IGBT Transistor Modules Time, Rise 80 nS (Typ.)  SEMIKRON IGBT Transistor Modules Time, Rise 80 nS (Typ.)   Transistor Type IGBT  SEMIKRON Transistor Type IGBT  IGBT Transistor Modules Transistor Type IGBT  SEMIKRON IGBT Transistor Modules Transistor Type IGBT   Type SPT  SEMIKRON Type SPT  IGBT Transistor Modules Type SPT  SEMIKRON IGBT Transistor Modules Type SPT   Voltage, Breakdown, Collector to Emitter 1200  SEMIKRON Voltage, Breakdown, Collector to Emitter 1200  IGBT Transistor Modules Voltage, Breakdown, Collector to Emitter 1200  SEMIKRON IGBT Transistor Modules Voltage, Breakdown, Collector to Emitter 1200   Voltage, Collector to Emitter 1200 V  SEMIKRON Voltage, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate Threshold, Range 5.5 V (Typ.)  SEMIKRON Voltage, Gate Threshold, Range 5.5 V (Typ.)  IGBT Transistor Modules Voltage, Gate Threshold, Range 5.5 V (Typ.)  SEMIKRON IGBT Transistor Modules Voltage, Gate Threshold, Range 5.5 V (Typ.)   Voltage, Gate to Emitter ±20 V  SEMIKRON Voltage, Gate to Emitter ±20 V  IGBT Transistor Modules Voltage, Gate to Emitter ±20 V  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter ±20 V   Voltage, Saturation, Collector to Emitter 1200 V  SEMIKRON Voltage, Saturation, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Saturation, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Saturation, Collector to Emitter 1200 V   Width 2.417" (61.4mm)  SEMIKRON Width 2.417" (61.4mm)  IGBT Transistor Modules Width 2.417" (61.4mm)  SEMIKRON IGBT Transistor Modules Width 2.417" (61.4mm)  
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