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SKM 400 GB 123 D - 

IGBT; D-56; IGBT; 1200 V; 400 A; 1200 V; 20 V; 5.5 V (Typ.)

SEMIKRON SKM 400 GB 123 D
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制造商產(chǎn)品編號:
SKM 400 GB 123 D
倉庫庫存編號:
70098165
技術(shù)數(shù)據(jù)表:
View SKM 400 GB 123 D Datasheet Datasheet
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SKM 400 GB 123 D產(chǎn)品概述

IGBT Module Transistors

SKM 400 GB 123 D產(chǎn)品信息

  Brand/Series  IGBT Series  
  Capacitance, Gate  22 nF  
  Channel Type  N  
  Configuration  Dual  
  Current, Collector  400 A  
  Current, Continuous Collector  400 A  
  Dimensions  106.4 x 61.4 x 30.5 mm  
  Energy Rating  78 mJ  
  Fall Time  80 ns  
  Height  1.201" (30.5mm)  
  Length  4.188" (106.4mm)  
  Mounting Type  Screw  
  Number of Pins  7  
  Operating and Storage Temperature  –40 to +150 °C  
  Package Type  D 56  
  Polarity  N-Channel  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  0.05 K/W  
  Switching Loss  38 mJ  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -40 °C  
  Temperature, Operating, Range  -40 to +150 °C  
  Time, Rise  115 ns  
  Transistor Type  IGBT  
  Type  Standard  
  Voltage, Breakdown, Collector to Emitter  1200 V  
  Voltage, Collector to Emitter  1200 V  
  Voltage, Collector to Emitter Shorted  1200 V  
  Voltage, Gate Threshold, Range  5.5 V (Typ.)  
  Voltage, Gate to Emitter  ±20 V  
  Voltage, Saturation, Collector to Emitter  1200 V  
  Width  2.417" (61.4mm)  
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SKM 400 GB 123 D相關(guān)搜索

Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Capacitance, Gate 22 nF  SEMIKRON Capacitance, Gate 22 nF  IGBT Transistor Modules Capacitance, Gate 22 nF  SEMIKRON IGBT Transistor Modules Capacitance, Gate 22 nF   Channel Type N  SEMIKRON Channel Type N  IGBT Transistor Modules Channel Type N  SEMIKRON IGBT Transistor Modules Channel Type N   Configuration Dual  SEMIKRON Configuration Dual  IGBT Transistor Modules Configuration Dual  SEMIKRON IGBT Transistor Modules Configuration Dual   Current, Collector 400 A  SEMIKRON Current, Collector 400 A  IGBT Transistor Modules Current, Collector 400 A  SEMIKRON IGBT Transistor Modules Current, Collector 400 A   Current, Continuous Collector 400 A  SEMIKRON Current, Continuous Collector 400 A  IGBT Transistor Modules Current, Continuous Collector 400 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 400 A   Dimensions 106.4 x 61.4 x 30.5 mm  SEMIKRON Dimensions 106.4 x 61.4 x 30.5 mm  IGBT Transistor Modules Dimensions 106.4 x 61.4 x 30.5 mm  SEMIKRON IGBT Transistor Modules Dimensions 106.4 x 61.4 x 30.5 mm   Energy Rating 78 mJ  SEMIKRON Energy Rating 78 mJ  IGBT Transistor Modules Energy Rating 78 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 78 mJ   Fall Time 80 ns  SEMIKRON Fall Time 80 ns  IGBT Transistor Modules Fall Time 80 ns  SEMIKRON IGBT Transistor Modules Fall Time 80 ns   Height 1.201" (30.5mm)  SEMIKRON Height 1.201" (30.5mm)  IGBT Transistor Modules Height 1.201" (30.5mm)  SEMIKRON IGBT Transistor Modules Height 1.201" (30.5mm)   Length 4.188" (106.4mm)  SEMIKRON Length 4.188" (106.4mm)  IGBT Transistor Modules Length 4.188" (106.4mm)  SEMIKRON IGBT Transistor Modules Length 4.188" (106.4mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Number of Pins 7  SEMIKRON Number of Pins 7  IGBT Transistor Modules Number of Pins 7  SEMIKRON IGBT Transistor Modules Number of Pins 7   Operating and Storage Temperature –40 to +150 °C  SEMIKRON Operating and Storage Temperature –40 to +150 °C  IGBT Transistor Modules Operating and Storage Temperature –40 to +150 °C  SEMIKRON IGBT Transistor Modules Operating and Storage Temperature –40 to +150 °C   Package Type D 56  SEMIKRON Package Type D 56  IGBT Transistor Modules Package Type D 56  SEMIKRON IGBT Transistor Modules Package Type D 56   Polarity N-Channel  SEMIKRON Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  SEMIKRON IGBT Transistor Modules Polarity N-Channel   Primary Type Si  SEMIKRON Primary Type Si  IGBT Transistor Modules Primary Type Si  SEMIKRON IGBT Transistor Modules Primary Type Si   Resistance, Thermal, Junction to Case 0.05 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.05 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.05 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.05 K/W   Switching Loss 38 mJ  SEMIKRON Switching Loss 38 mJ  IGBT Transistor Modules Switching Loss 38 mJ  SEMIKRON IGBT Transistor Modules Switching Loss 38 mJ   Temperature, Operating, Maximum +150 °C  SEMIKRON Temperature, Operating, Maximum +150 °C  IGBT Transistor Modules Temperature, Operating, Maximum +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -40 °C  SEMIKRON Temperature, Operating, Minimum -40 °C  IGBT Transistor Modules Temperature, Operating, Minimum -40 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +150 °C  SEMIKRON Temperature, Operating, Range -40 to +150 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C   Time, Rise 115 ns  SEMIKRON Time, Rise 115 ns  IGBT Transistor Modules Time, Rise 115 ns  SEMIKRON IGBT Transistor Modules Time, Rise 115 ns   Transistor Type IGBT  SEMIKRON Transistor Type IGBT  IGBT Transistor Modules Transistor Type IGBT  SEMIKRON IGBT Transistor Modules Transistor Type IGBT   Type Standard  SEMIKRON Type Standard  IGBT Transistor Modules Type Standard  SEMIKRON IGBT Transistor Modules Type Standard   Voltage, Breakdown, Collector to Emitter 1200 V  SEMIKRON Voltage, Breakdown, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Breakdown, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Breakdown, Collector to Emitter 1200 V   Voltage, Collector to Emitter 1200 V  SEMIKRON Voltage, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate Threshold, Range 5.5 V (Typ.)  SEMIKRON Voltage, Gate Threshold, Range 5.5 V (Typ.)  IGBT Transistor Modules Voltage, Gate Threshold, Range 5.5 V (Typ.)  SEMIKRON IGBT Transistor Modules Voltage, Gate Threshold, Range 5.5 V (Typ.)   Voltage, Gate to Emitter ±20 V  SEMIKRON Voltage, Gate to Emitter ±20 V  IGBT Transistor Modules Voltage, Gate to Emitter ±20 V  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter ±20 V   Voltage, Saturation, Collector to Emitter 1200 V  SEMIKRON Voltage, Saturation, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Saturation, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Saturation, Collector to Emitter 1200 V   Width 2.417" (61.4mm)  SEMIKRON Width 2.417" (61.4mm)  IGBT Transistor Modules Width 2.417" (61.4mm)  SEMIKRON IGBT Transistor Modules Width 2.417" (61.4mm)  
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