Brand/Series |
IGBT Series |
|
Capacitance, Gate |
22 nF |
|
Channel Type |
N |
|
Configuration |
Dual |
|
Current, Collector |
400 A |
|
Current, Continuous Collector |
400 A |
|
Dimensions |
106.4 x 61.4 x 30.5 mm |
|
Energy Rating |
78 mJ |
|
Fall Time |
80 ns |
|
Height |
1.201" (30.5mm) |
|
Length |
4.188" (106.4mm) |
|
Mounting Type |
Screw |
|
Number of Pins |
7 |
|
Operating and Storage Temperature |
–40 to +150 °C |
|
Package Type |
D 56 |
|
Polarity |
N-Channel |
|
Primary Type |
Si |
|
Resistance, Thermal, Junction to Case |
0.05 K/W |
|
Switching Loss |
38 mJ |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-40 °C |
|
Temperature, Operating, Range |
-40 to +150 °C |
|
Time, Rise |
115 ns |
|
Transistor Type |
IGBT |
|
Type |
Standard |
|
Voltage, Breakdown, Collector to Emitter |
1200 V |
|
Voltage, Collector to Emitter |
1200 V |
|
Voltage, Collector to Emitter Shorted |
1200 V |
|
Voltage, Gate Threshold, Range |
5.5 V (Typ.) |
|
Voltage, Gate to Emitter |
±20 V |
|
Voltage, Saturation, Collector to Emitter |
1200 V |
|
Width |
2.417" (61.4mm) |
|
關(guān)鍵詞 |