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SKM200GB125D - 

IGBT, Power; IGBT; 1200 V; 200 A @ degC; 20 V; 200 A @ 25 degC; 10 nF (Typ.)

SEMIKRON SKM200GB125D
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制造商產(chǎn)品編號:
SKM200GB125D
倉庫庫存編號:
70098224
技術(shù)數(shù)據(jù)表:
View SKM200GB125D Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認(rèn)好實時在庫數(shù)量,謝謝合作!

SKM200GB125D產(chǎn)品概述

5.5 V (Typ.) Gate to Emitter Threshold Voltage, 0.09 K/W (Max.), Ultra Fast IGBT Modules
  • N-Channel, homogeneous Si
  • Low inductance case
  • Short tail current with low temperature dependence
  • High short circuit capability
  • Fast & soft inverse CAL diodes
  • Isolated copper baseplate using direct copper bonding technology
  • SKM200GB125D產(chǎn)品信息

      Brand/Series  IGBT Series  
      Capacitance, Gate  10 nF  
      Capacitance, Input  10 nF (Typ.)  
      Channel Type  N  
      Configuration  Dual  
      Current, Collector  200 A  
      Current, Continuous Collector  200 A  
      Dimensions  106.4 x 61.4 x 30.5 mm  
      Energy Rating  14 mJ  
      Height  1.201" (30.5mm)  
      Inductance, Collector to Emitter  20 nH  
      Length  4.188" (106.4mm)  
      Mounting Type  Screw  
      Number of Pins  7  
      Package Type  D 56  
      Polarity  N-Channel  
      Primary Type  Si  
      Resistance, Collector to Emitter  12 Milliohms (Typ.)  
      Resistance, Thermal  0.09 K?W (Max.) (Junction-Case)  
      Resistance, Thermal, Junction to Case  0.09 K/W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -40 °C  
      Temperature, Operating, Range  -40 to +150 °C  
      Time, Turn-Off  420 ns  
      Time, Turn-On  75 ns  
      Transistor Type  IGBT  
      Type  Ultrafast  
      Voltage, Collector to Emitter  1200 V  
      Voltage, Collector to Emitter Shorted  1200 V  
      Voltage, Gate to Emitter  ±20 V  
      Voltage, Gate to Emitter Threshold  5.5 V (Typ.)  
      Width  2.417" (61.4mm)  
    關(guān)鍵詞         

    SKM200GB125D相關(guān)搜索

    Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Capacitance, Gate 10 nF  SEMIKRON Capacitance, Gate 10 nF  IGBT Transistor Modules Capacitance, Gate 10 nF  SEMIKRON IGBT Transistor Modules Capacitance, Gate 10 nF   Capacitance, Input 10 nF (Typ.)  SEMIKRON Capacitance, Input 10 nF (Typ.)  IGBT Transistor Modules Capacitance, Input 10 nF (Typ.)  SEMIKRON IGBT Transistor Modules Capacitance, Input 10 nF (Typ.)   Channel Type N  SEMIKRON Channel Type N  IGBT Transistor Modules Channel Type N  SEMIKRON IGBT Transistor Modules Channel Type N   Configuration Dual  SEMIKRON Configuration Dual  IGBT Transistor Modules Configuration Dual  SEMIKRON IGBT Transistor Modules Configuration Dual   Current, Collector 200 A  SEMIKRON Current, Collector 200 A  IGBT Transistor Modules Current, Collector 200 A  SEMIKRON IGBT Transistor Modules Current, Collector 200 A   Current, Continuous Collector 200 A  SEMIKRON Current, Continuous Collector 200 A  IGBT Transistor Modules Current, Continuous Collector 200 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 200 A   Dimensions 106.4 x 61.4 x 30.5 mm  SEMIKRON Dimensions 106.4 x 61.4 x 30.5 mm  IGBT Transistor Modules Dimensions 106.4 x 61.4 x 30.5 mm  SEMIKRON IGBT Transistor Modules Dimensions 106.4 x 61.4 x 30.5 mm   Energy Rating 14 mJ  SEMIKRON Energy Rating 14 mJ  IGBT Transistor Modules Energy Rating 14 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 14 mJ   Height 1.201" (30.5mm)  SEMIKRON Height 1.201" (30.5mm)  IGBT Transistor Modules Height 1.201" (30.5mm)  SEMIKRON IGBT Transistor Modules Height 1.201" (30.5mm)   Inductance, Collector to Emitter 20 nH  SEMIKRON Inductance, Collector to Emitter 20 nH  IGBT Transistor Modules Inductance, Collector to Emitter 20 nH  SEMIKRON IGBT Transistor Modules Inductance, Collector to Emitter 20 nH   Length 4.188" (106.4mm)  SEMIKRON Length 4.188" (106.4mm)  IGBT Transistor Modules Length 4.188" (106.4mm)  SEMIKRON IGBT Transistor Modules Length 4.188" (106.4mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Number of Pins 7  SEMIKRON Number of Pins 7  IGBT Transistor Modules Number of Pins 7  SEMIKRON IGBT Transistor Modules Number of Pins 7   Package Type D 56  SEMIKRON Package Type D 56  IGBT Transistor Modules Package Type D 56  SEMIKRON IGBT Transistor Modules Package Type D 56   Polarity N-Channel  SEMIKRON Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  SEMIKRON IGBT Transistor Modules Polarity N-Channel   Primary Type Si  SEMIKRON Primary Type Si  IGBT Transistor Modules Primary Type Si  SEMIKRON IGBT Transistor Modules Primary Type Si   Resistance, Collector to Emitter 12 Milliohms (Typ.)  SEMIKRON Resistance, Collector to Emitter 12 Milliohms (Typ.)  IGBT Transistor Modules Resistance, Collector to Emitter 12 Milliohms (Typ.)  SEMIKRON IGBT Transistor Modules Resistance, Collector to Emitter 12 Milliohms (Typ.)   Resistance, Thermal 0.09 K?W (Max.) (Junction-Case)  SEMIKRON Resistance, Thermal 0.09 K?W (Max.) (Junction-Case)  IGBT Transistor Modules Resistance, Thermal 0.09 K?W (Max.) (Junction-Case)  SEMIKRON IGBT Transistor Modules Resistance, Thermal 0.09 K?W (Max.) (Junction-Case)   Resistance, Thermal, Junction to Case 0.09 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.09 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.09 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.09 K/W   Temperature, Operating, Maximum +150 °C  SEMIKRON Temperature, Operating, Maximum +150 °C  IGBT Transistor Modules Temperature, Operating, Maximum +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -40 °C  SEMIKRON Temperature, Operating, Minimum -40 °C  IGBT Transistor Modules Temperature, Operating, Minimum -40 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +150 °C  SEMIKRON Temperature, Operating, Range -40 to +150 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C   Time, Turn-Off 420 ns  SEMIKRON Time, Turn-Off 420 ns  IGBT Transistor Modules Time, Turn-Off 420 ns  SEMIKRON IGBT Transistor Modules Time, Turn-Off 420 ns   Time, Turn-On 75 ns  SEMIKRON Time, Turn-On 75 ns  IGBT Transistor Modules Time, Turn-On 75 ns  SEMIKRON IGBT Transistor Modules Time, Turn-On 75 ns   Transistor Type IGBT  SEMIKRON Transistor Type IGBT  IGBT Transistor Modules Transistor Type IGBT  SEMIKRON IGBT Transistor Modules Transistor Type IGBT   Type Ultrafast  SEMIKRON Type Ultrafast  IGBT Transistor Modules Type Ultrafast  SEMIKRON IGBT Transistor Modules Type Ultrafast   Voltage, Collector to Emitter 1200 V  SEMIKRON Voltage, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate to Emitter ±20 V  SEMIKRON Voltage, Gate to Emitter ±20 V  IGBT Transistor Modules Voltage, Gate to Emitter ±20 V  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter ±20 V   Voltage, Gate to Emitter Threshold 5.5 V (Typ.)  SEMIKRON Voltage, Gate to Emitter Threshold 5.5 V (Typ.)  IGBT Transistor Modules Voltage, Gate to Emitter Threshold 5.5 V (Typ.)  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter Threshold 5.5 V (Typ.)   Width 2.417" (61.4mm)  SEMIKRON Width 2.417" (61.4mm)  IGBT Transistor Modules Width 2.417" (61.4mm)  SEMIKRON IGBT Transistor Modules Width 2.417" (61.4mm)  
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