Brand/Series |
IGBT Series |
|
Capacitance, Gate |
4.7 nF |
|
Channel Type |
N |
|
Configuration |
Array |
|
Current, Collector |
83 A |
|
Current, Continuous Collector |
83 A |
|
Dimensions |
55 x 60.25 x 12 mm |
|
Energy Rating |
5.9 mJ |
|
Length |
2.165" (55mm) |
|
Mounting Type |
Through Hole |
|
Package Type |
T-74 |
|
Polarity |
N-Channel |
|
Primary Type |
Si |
|
Temperature, Operating, Maximum |
+175 °C |
|
Temperature, Operating, Minimum |
-40 °C |
|
Temperature, Operating, Range |
-40 to +175 °C |
|
Transistor Type |
IGBT |
|
Type |
Trench |
|
Voltage, Collector to Emitter |
600 V |
|
Voltage, Collector to Emitter Shorted |
600 V |
|
Width |
2.372" (60.25mm) |
|
關(guān)鍵詞 |