Brand/Series |
IGBT Series |
|
Capacitance, Gate |
32.3 nF |
|
Channel Type |
N |
|
Configuration |
Array |
|
Current, Collector |
642 A |
|
Current, Continuous Collector |
642 A |
|
Energy Rating |
100 mJ |
|
Height |
0.669" (17mm) |
|
Length |
5.885" (149.5mm) |
|
Package Type |
SEMIX 33c |
|
Polarity |
N-Channel |
|
Primary Type |
Si |
|
Resistance, Thermal, Junction to Case |
0.061 K/W |
|
Switching Loss |
95 @ 125°C (Typ.) |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-40 °C |
|
Temperature, Operating, Range |
-40 to +150 °C |
|
Transistor Type |
IGBT |
|
Type |
Trench |
|
Voltage and Current Rating |
1200 V, 700 A @ 25°C |
|
Voltage, Collector to Emitter Shorted |
1200 V |
|
Voltage, Saturation, Collector to Emitter |
1.7 V @ 25°C (Typ.) |
|
關(guān)鍵詞 |