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SEMIX653GD176HDC - 

IGBT; 1700 V, 660 A @ 25 DegC; 650 A @ 80 DegC; 1.7 V @ 25 degC

SEMIKRON SEMIX653GD176HDC
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制造商產(chǎn)品編號:
SEMIX653GD176HDC
倉庫庫存編號:
70098214
技術(shù)數(shù)據(jù)表:
View SEMIX653GD176HDC Datasheet Datasheet
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SEMIX653GD176HDC產(chǎn)品概述



Features:
  • Homogeneous Si
  • Trench = Trenchgate Technology
  • VCE(SAT) with Positive Temperature Coefficient
  • High Short circuit Capability, Self-Limiting to 6 × IC

    Applications:
  • AC Inverter Drives
  • Mains 575-750 VAC
  • Public Transport (Auxiliary System)
  • SEMIX653GD176HDC產(chǎn)品信息

      Brand/Series  IGBT Series  
      Capacitance, Gate  39.6 nF  
      Configuration  Array  
      Current, Collector  619 A  
      Current, Continuous Collector  619 A  
      Dimensions  149.5 x 163 x 17 mm  
      Energy Rating  480 mJ  
      Height  0.669" (17mm)  
      Length  5.885" (149.5mm)  
      Mounting Type  Screw  
      Number of Pins  29  
      Package Type  SEMIX 33c  
      Polarity  N-Channel  
      Primary Type  Si  
      Resistance, Thermal, Junction to Case  0.054 K/W  
      Switching Loss  455 @ 125°C (Typ.)  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Transistor Type  IGBT  
      Type  Trench  
      Voltage and Current Rating  1700 V, 660 A @ 25°C  
      Voltage, Collector to Emitter  1700 V  
      Voltage, Collector to Emitter Shorted  1700 V  
      Voltage, Gate to Emitter  20 V  
      Voltage, Saturation, Collector to Emitter  1.7 V @ 25°C (Typ.)  
      Width  6.417" (163mm)  
    關(guān)鍵詞         

    SEMIX653GD176HDC相關(guān)搜索

    Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Capacitance, Gate 39.6 nF  SEMIKRON Capacitance, Gate 39.6 nF  IGBT Transistor Modules Capacitance, Gate 39.6 nF  SEMIKRON IGBT Transistor Modules Capacitance, Gate 39.6 nF   Configuration Array  SEMIKRON Configuration Array  IGBT Transistor Modules Configuration Array  SEMIKRON IGBT Transistor Modules Configuration Array   Current, Collector 619 A  SEMIKRON Current, Collector 619 A  IGBT Transistor Modules Current, Collector 619 A  SEMIKRON IGBT Transistor Modules Current, Collector 619 A   Current, Continuous Collector 619 A  SEMIKRON Current, Continuous Collector 619 A  IGBT Transistor Modules Current, Continuous Collector 619 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 619 A   Dimensions 149.5 x 163 x 17 mm  SEMIKRON Dimensions 149.5 x 163 x 17 mm  IGBT Transistor Modules Dimensions 149.5 x 163 x 17 mm  SEMIKRON IGBT Transistor Modules Dimensions 149.5 x 163 x 17 mm   Energy Rating 480 mJ  SEMIKRON Energy Rating 480 mJ  IGBT Transistor Modules Energy Rating 480 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 480 mJ   Height 0.669" (17mm)  SEMIKRON Height 0.669" (17mm)  IGBT Transistor Modules Height 0.669" (17mm)  SEMIKRON IGBT Transistor Modules Height 0.669" (17mm)   Length 5.885" (149.5mm)  SEMIKRON Length 5.885" (149.5mm)  IGBT Transistor Modules Length 5.885" (149.5mm)  SEMIKRON IGBT Transistor Modules Length 5.885" (149.5mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Number of Pins 29  SEMIKRON Number of Pins 29  IGBT Transistor Modules Number of Pins 29  SEMIKRON IGBT Transistor Modules Number of Pins 29   Package Type SEMIX 33c  SEMIKRON Package Type SEMIX 33c  IGBT Transistor Modules Package Type SEMIX 33c  SEMIKRON IGBT Transistor Modules Package Type SEMIX 33c   Polarity N-Channel  SEMIKRON Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  SEMIKRON IGBT Transistor Modules Polarity N-Channel   Primary Type Si  SEMIKRON Primary Type Si  IGBT Transistor Modules Primary Type Si  SEMIKRON IGBT Transistor Modules Primary Type Si   Resistance, Thermal, Junction to Case 0.054 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.054 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.054 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.054 K/W   Switching Loss 455 @ 125°C (Typ.)  SEMIKRON Switching Loss 455 @ 125°C (Typ.)  IGBT Transistor Modules Switching Loss 455 @ 125°C (Typ.)  SEMIKRON IGBT Transistor Modules Switching Loss 455 @ 125°C (Typ.)   Temperature, Operating, Maximum +150 °C  SEMIKRON Temperature, Operating, Maximum +150 °C  IGBT Transistor Modules Temperature, Operating, Maximum +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  SEMIKRON Temperature, Operating, Minimum -55 °C  IGBT Transistor Modules Temperature, Operating, Minimum -55 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  SEMIKRON Temperature, Operating, Range -55 to +150 °C  IGBT Transistor Modules Temperature, Operating, Range -55 to +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -55 to +150 °C   Transistor Type IGBT  SEMIKRON Transistor Type IGBT  IGBT Transistor Modules Transistor Type IGBT  SEMIKRON IGBT Transistor Modules Transistor Type IGBT   Type Trench  SEMIKRON Type Trench  IGBT Transistor Modules Type Trench  SEMIKRON IGBT Transistor Modules Type Trench   Voltage and Current Rating 1700 V, 660 A @ 25°C  SEMIKRON Voltage and Current Rating 1700 V, 660 A @ 25°C  IGBT Transistor Modules Voltage and Current Rating 1700 V, 660 A @ 25°C  SEMIKRON IGBT Transistor Modules Voltage and Current Rating 1700 V, 660 A @ 25°C   Voltage, Collector to Emitter 1700 V  SEMIKRON Voltage, Collector to Emitter 1700 V  IGBT Transistor Modules Voltage, Collector to Emitter 1700 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 1700 V   Voltage, Collector to Emitter Shorted 1700 V  SEMIKRON Voltage, Collector to Emitter Shorted 1700 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1700 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1700 V   Voltage, Gate to Emitter 20 V  SEMIKRON Voltage, Gate to Emitter 20 V  IGBT Transistor Modules Voltage, Gate to Emitter 20 V  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter 20 V   Voltage, Saturation, Collector to Emitter 1.7 V @ 25°C (Typ.)  SEMIKRON Voltage, Saturation, Collector to Emitter 1.7 V @ 25°C (Typ.)  IGBT Transistor Modules Voltage, Saturation, Collector to Emitter 1.7 V @ 25°C (Typ.)  SEMIKRON IGBT Transistor Modules Voltage, Saturation, Collector to Emitter 1.7 V @ 25°C (Typ.)   Width 6.417" (163mm)  SEMIKRON Width 6.417" (163mm)  IGBT Transistor Modules Width 6.417" (163mm)  SEMIKRON IGBT Transistor Modules Width 6.417" (163mm)  
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