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SEMIX453GAL12E4S - 

IGBT HALFBRIDGE ULTRAFAST, 1200V, SEMITRANS

SEMIKRON SEMIX453GAL12E4S
聲明:圖片僅供參考,請以實(shí)物為準(zhǔn)!
制造商產(chǎn)品編號:
SEMIX453GAL12E4S
倉庫庫存編號:
70098362
技術(shù)數(shù)據(jù)表:
View SEMIX453GAL12E4S Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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SEMIX453GAL12E4S產(chǎn)品概述



Features:
  • IGBT4 = 4. Generation (Trench) IGBT
  • VCEsat with Positive Temperature Coefficient
  • High short circuit Capability, Self Limiting to 6 × ICNOM
  • Electronic Welders at fSW Up-to-20 kHz

    Applications:
  • AC Inverter Drives
  • UPS
  • Electronic Welders at fSW Up-to-20 kHz
  • SEMIX453GAL12E4S產(chǎn)品信息

      Brand/Series  IGBT Series  
      Channel Type  N  
      Configuration  Single  
      Current, Collector  683 A  
      Current, Continuous Collector  683 A  
      Dimensions  149.5 x 63.5 x 17 mm  
      Energy Rating  45 mJ  
      Height  0.669" (17mm)  
      Length  5.885" (149.5mm)  
      Mounting Type  Screw  
      Number of Pins  20  
      Package Type  SEMIX 3s  
      Resistance, Thermal, Junction to Case  0.065 K/W  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -40 °C  
      Temperature, Operating, Range  -40 to +175 °C  
      Type  Ultrafast  
      Voltage, Collector to Emitter  1200 V  
      Voltage, Collector to Emitter Shorted  1200 V  
      Voltage, Gate to Emitter  20 V  
      Width  2.5" (63.5mm)  
    關(guān)鍵詞         

    SEMIX453GAL12E4S相關(guān)搜索

    Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Channel Type N  SEMIKRON Channel Type N  IGBT Transistor Modules Channel Type N  SEMIKRON IGBT Transistor Modules Channel Type N   Configuration Single  SEMIKRON Configuration Single  IGBT Transistor Modules Configuration Single  SEMIKRON IGBT Transistor Modules Configuration Single   Current, Collector 683 A  SEMIKRON Current, Collector 683 A  IGBT Transistor Modules Current, Collector 683 A  SEMIKRON IGBT Transistor Modules Current, Collector 683 A   Current, Continuous Collector 683 A  SEMIKRON Current, Continuous Collector 683 A  IGBT Transistor Modules Current, Continuous Collector 683 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 683 A   Dimensions 149.5 x 63.5 x 17 mm  SEMIKRON Dimensions 149.5 x 63.5 x 17 mm  IGBT Transistor Modules Dimensions 149.5 x 63.5 x 17 mm  SEMIKRON IGBT Transistor Modules Dimensions 149.5 x 63.5 x 17 mm   Energy Rating 45 mJ  SEMIKRON Energy Rating 45 mJ  IGBT Transistor Modules Energy Rating 45 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 45 mJ   Height 0.669" (17mm)  SEMIKRON Height 0.669" (17mm)  IGBT Transistor Modules Height 0.669" (17mm)  SEMIKRON IGBT Transistor Modules Height 0.669" (17mm)   Length 5.885" (149.5mm)  SEMIKRON Length 5.885" (149.5mm)  IGBT Transistor Modules Length 5.885" (149.5mm)  SEMIKRON IGBT Transistor Modules Length 5.885" (149.5mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Number of Pins 20  SEMIKRON Number of Pins 20  IGBT Transistor Modules Number of Pins 20  SEMIKRON IGBT Transistor Modules Number of Pins 20   Package Type SEMIX 3s  SEMIKRON Package Type SEMIX 3s  IGBT Transistor Modules Package Type SEMIX 3s  SEMIKRON IGBT Transistor Modules Package Type SEMIX 3s   Resistance, Thermal, Junction to Case 0.065 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.065 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.065 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.065 K/W   Temperature, Operating, Maximum +175 °C  SEMIKRON Temperature, Operating, Maximum +175 °C  IGBT Transistor Modules Temperature, Operating, Maximum +175 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -40 °C  SEMIKRON Temperature, Operating, Minimum -40 °C  IGBT Transistor Modules Temperature, Operating, Minimum -40 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +175 °C  SEMIKRON Temperature, Operating, Range -40 to +175 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +175 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +175 °C   Type Ultrafast  SEMIKRON Type Ultrafast  IGBT Transistor Modules Type Ultrafast  SEMIKRON IGBT Transistor Modules Type Ultrafast   Voltage, Collector to Emitter 1200 V  SEMIKRON Voltage, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate to Emitter 20 V  SEMIKRON Voltage, Gate to Emitter 20 V  IGBT Transistor Modules Voltage, Gate to Emitter 20 V  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter 20 V   Width 2.5" (63.5mm)  SEMIKRON Width 2.5" (63.5mm)  IGBT Transistor Modules Width 2.5" (63.5mm)  SEMIKRON IGBT Transistor Modules Width 2.5" (63.5mm)  
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