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SI7106DN-T1-E3 - 

SI7106DN-T1-E3 N-channel MOSFET Transistor, 12.5 A, 20 V, 8-Pin PowerPAK 1212

Siliconix / Vishay SI7106DN-T1-E3
聲明:圖片僅供參考,請以實物為準!
制造商產品編號:
SI7106DN-T1-E3
倉庫庫存編號:
70026262
技術數(shù)據(jù)表:
View SI7106DN-T1-E3 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產品數(shù)據(jù)庫龐大,部分產品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數(shù)量,謝謝合作!

SI7106DN-T1-E3產品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • SI7106DN-T1-E3產品信息

      Brand/Series  SI71 Series  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Quad Drain, Triple Source  
      Current, Drain  12.5 A  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  8  
      Package Type  PowerPAK 1212-8  
      Power Dissipation  1.5 W  
      Resistance, Drain to Source On  0.0098 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  50 ns  
      Time, Turn-On Delay  25 ns  
      Transconductance, Forward  105 S  
      Typical Gate Charge @ Vgs  17.5 nC @ 4.5 V  
      Voltage, Drain to Source  20 V  
      Voltage, Forward, Diode  1.2 V  
      Voltage, Gate to Source  ±12 V  
    關鍵詞         

    SI7106DN-T1-E3相關搜索

    Brand/Series SI71 Series  Siliconix / Vishay Brand/Series SI71 Series  MOSFET Transistors Brand/Series SI71 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI71 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Quad Drain, Triple Source  Siliconix / Vishay Configuration Quad Drain, Triple Source  MOSFET Transistors Configuration Quad Drain, Triple Source  Siliconix / Vishay MOSFET Transistors Configuration Quad Drain, Triple Source   Current, Drain 12.5 A  Siliconix / Vishay Current, Drain 12.5 A  MOSFET Transistors Current, Drain 12.5 A  Siliconix / Vishay MOSFET Transistors Current, Drain 12.5 A   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type PowerPAK 1212-8  Siliconix / Vishay Package Type PowerPAK 1212-8  MOSFET Transistors Package Type PowerPAK 1212-8  Siliconix / Vishay MOSFET Transistors Package Type PowerPAK 1212-8   Power Dissipation 1.5 W  Siliconix / Vishay Power Dissipation 1.5 W  MOSFET Transistors Power Dissipation 1.5 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.5 W   Resistance, Drain to Source On 0.0098 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.0098 Ω  MOSFET Transistors Resistance, Drain to Source On 0.0098 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.0098 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 50 ns  Siliconix / Vishay Time, Turn-Off Delay 50 ns  MOSFET Transistors Time, Turn-Off Delay 50 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 50 ns   Time, Turn-On Delay 25 ns  Siliconix / Vishay Time, Turn-On Delay 25 ns  MOSFET Transistors Time, Turn-On Delay 25 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 25 ns   Transconductance, Forward 105 S  Siliconix / Vishay Transconductance, Forward 105 S  MOSFET Transistors Transconductance, Forward 105 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 105 S   Typical Gate Charge @ Vgs 17.5 nC @ 4.5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 17.5 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 17.5 nC @ 4.5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 17.5 nC @ 4.5 V   Voltage, Drain to Source 20 V  Siliconix / Vishay Voltage, Drain to Source 20 V  MOSFET Transistors Voltage, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 20 V   Voltage, Forward, Diode 1.2 V  Siliconix / Vishay Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±12 V  Siliconix / Vishay Voltage, Gate to Source ±12 V  MOSFET Transistors Voltage, Gate to Source ±12 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±12 V  
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