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SI5475BDC-T1-E3 - 

P-CHANNEL 12-V (D-S) MOSFET

Siliconix / Vishay SI5475BDC-T1-E3
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制造商產(chǎn)品編號(hào)：
SI5475BDC-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào)：
70026245
技術(shù)數(shù)據(jù)表：
View SI5475BDC-T1-E3 Datasheet Datasheet
訂購(gòu)熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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SI5475BDC-T1-E3產(chǎn)品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers

    • SI5475BDC-T1-E3產(chǎn)品信息

      Brand/Series  SI54 Series  
      Capacitance, Input  1400 pF @ -6 V  
      Channel Mode  Enhancement  
      Channel Type  P  
      Configuration  Hex Drain  
      Current, Drain  -6 A  
      Dimensions  3.1 x 1.7 x 1.1 mm  
      Fall Time  110 ns  
      Gate Charge, Total  40 nC  
      Height  0.043" (1.1mm)  
      Length  0.122" (3.1mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  8  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  1206-8 ChipFET  
      Polarization  P-Channel  
      Power Dissipation  6.3 W  
      Resistance, Drain to Source On  0.028 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  50 °C/W  
      Time, Turn-Off Delay  100 ns  
      Time, Turn-On Delay  10 ns  
      Transconductance, Forward  22 S  
      Typical Gate Charge @ Vgs  26 nC @ -6 V  
      Voltage, Breakdown, Drain to Source  -12 V  
      Voltage, Drain to Source  -12 V  
      Voltage, Forward, Diode  -1.2 V  
      Voltage, Gate to Source  ±8 V  
      Width  0.067" (1.7mm)  
    關(guān)鍵詞         

    SI5475BDC-T1-E3相關(guān)搜索

    Brand/Series SI54 Series  Siliconix / Vishay Brand/Series SI54 Series  MOSFET Transistors Brand/Series SI54 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI54 Series   Capacitance, Input 1400 pF @ -6 V  Siliconix / Vishay Capacitance, Input 1400 pF @ -6 V  MOSFET Transistors Capacitance, Input 1400 pF @ -6 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 1400 pF @ -6 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Hex Drain  Siliconix / Vishay Configuration Hex Drain  MOSFET Transistors Configuration Hex Drain  Siliconix / Vishay MOSFET Transistors Configuration Hex Drain   Current, Drain -6 A  Siliconix / Vishay Current, Drain -6 A  MOSFET Transistors Current, Drain -6 A  Siliconix / Vishay MOSFET Transistors Current, Drain -6 A   Dimensions 3.1 x 1.7 x 1.1 mm  Siliconix / Vishay Dimensions 3.1 x 1.7 x 1.1 mm  MOSFET Transistors Dimensions 3.1 x 1.7 x 1.1 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.1 x 1.7 x 1.1 mm   Fall Time 110 ns  Siliconix / Vishay Fall Time 110 ns  MOSFET Transistors Fall Time 110 ns  Siliconix / Vishay MOSFET Transistors Fall Time 110 ns   Gate Charge, Total 40 nC  Siliconix / Vishay Gate Charge, Total 40 nC  MOSFET Transistors Gate Charge, Total 40 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 40 nC   Height 0.043" (1.1mm)  Siliconix / Vishay Height 0.043" (1.1mm)  MOSFET Transistors Height 0.043" (1.1mm)  Siliconix / Vishay MOSFET Transistors Height 0.043" (1.1mm)   Length 0.122" (3.1mm)  Siliconix / Vishay Length 0.122" (3.1mm)  MOSFET Transistors Length 0.122" (3.1mm)  Siliconix / Vishay MOSFET Transistors Length 0.122" (3.1mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type 1206-8 ChipFET  Siliconix / Vishay Package Type 1206-8 ChipFET  MOSFET Transistors Package Type 1206-8 ChipFET  Siliconix / Vishay MOSFET Transistors Package Type 1206-8 ChipFET   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 6.3 W  Siliconix / Vishay Power Dissipation 6.3 W  MOSFET Transistors Power Dissipation 6.3 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 6.3 W   Resistance, Drain to Source On 0.028 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.028 Ω  MOSFET Transistors Resistance, Drain to Source On 0.028 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.028 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 50 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 50 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 50 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 50 °C/W   Time, Turn-Off Delay 100 ns  Siliconix / Vishay Time, Turn-Off Delay 100 ns  MOSFET Transistors Time, Turn-Off Delay 100 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 100 ns   Time, Turn-On Delay 10 ns  Siliconix / Vishay Time, Turn-On Delay 10 ns  MOSFET Transistors Time, Turn-On Delay 10 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 10 ns   Transconductance, Forward 22 S  Siliconix / Vishay Transconductance, Forward 22 S  MOSFET Transistors Transconductance, Forward 22 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 22 S   Typical Gate Charge @ Vgs 26 nC @ -6 V  Siliconix / Vishay Typical Gate Charge @ Vgs 26 nC @ -6 V  MOSFET Transistors Typical Gate Charge @ Vgs 26 nC @ -6 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 26 nC @ -6 V   Voltage, Breakdown, Drain to Source -12 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -12 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -12 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -12 V   Voltage, Drain to Source -12 V  Siliconix / Vishay Voltage, Drain to Source -12 V  MOSFET Transistors Voltage, Drain to Source -12 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -12 V   Voltage, Forward, Diode -1.2 V  Siliconix / Vishay Voltage, Forward, Diode -1.2 V  MOSFET Transistors Voltage, Forward, Diode -1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.2 V   Voltage, Gate to Source ±8 V  Siliconix / Vishay Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±8 V   Width 0.067" (1.7mm)  Siliconix / Vishay Width 0.067" (1.7mm)  MOSFET Transistors Width 0.067" (1.7mm)  Siliconix / Vishay MOSFET Transistors Width 0.067" (1.7mm)  
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