amphenol代理商
專業(yè)銷售Amphenol(安費諾)全系列產(chǎn)品-英國2號倉庫
美國1號分類選型新加坡2號分類選型英國10號分類選型英國2號分類選型日本5號分類選型

在本站結(jié)果里搜索:    
熱門搜索詞:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

SI4532ADY-T1-E3 - 

SI4532ADY-T1-E3 Dual N/P-channel MOSFETTransistor, 3 A, 3.7 A, 30 V, 8-Pin SOIC

Siliconix / Vishay SI4532ADY-T1-E3
聲明:圖片僅供參考,請以實物為準(zhǔn)!
制造商產(chǎn)品編號:
SI4532ADY-T1-E3
倉庫庫存編號:
70026111
技術(shù)數(shù)據(jù)表:
View SI4532ADY-T1-E3 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認(rèn)好實時在庫數(shù)量,謝謝合作!

SI4532ADY-T1-E3產(chǎn)品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • SI4532ADY-T1-E3產(chǎn)品信息

      Brand/Series  SI45 Series  
      Channel Mode  Enhancement  
      Channel Type  N, P  
      Configuration  Dual Gate, Dual Source, Quad Drain  
      Current, Drain  -3, 3.7 A  
      Dimensions  5 x 4 x 1.55 mm  
      Gate Charge, Total  8/10 nC  
      Height  0.061" (1.55mm)  
      Length  0.196" (5mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  2  
      Number of Pins  8  
      Package Type  SO-8  
      Polarization  N-Channel and P-Channel  
      Power Dissipation  1.13, 1.2 W  
      Resistance, Drain to Source On  0.075, 0.135 Ω  
      Temperature, Operating  -55 to 150 °C  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  110/105 °C/W  
      Time, Turn-Off Delay  21, 23 ns  
      Time, Turn-On Delay  8, 12 ns  
      Transconductance, Forward  5, 11 S  
      Typical Gate Charge @ Vgs  10 nC @ 10 V, 8 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  30/-30 V  
      Voltage, Drain to Source  -30, 30 V  
      Voltage, Forward, Diode  0.8/-0.82 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.157" (4mm)  
    關(guān)鍵詞         

    SI4532ADY-T1-E3相關(guān)搜索

    Brand/Series SI45 Series  Siliconix / Vishay Brand/Series SI45 Series  MOSFET Transistors Brand/Series SI45 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI45 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N, P  Siliconix / Vishay Channel Type N, P  MOSFET Transistors Channel Type N, P  Siliconix / Vishay MOSFET Transistors Channel Type N, P   Configuration Dual Gate, Dual Source, Quad Drain  Siliconix / Vishay Configuration Dual Gate, Dual Source, Quad Drain  MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain  Siliconix / Vishay MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain   Current, Drain -3, 3.7 A  Siliconix / Vishay Current, Drain -3, 3.7 A  MOSFET Transistors Current, Drain -3, 3.7 A  Siliconix / Vishay MOSFET Transistors Current, Drain -3, 3.7 A   Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay Dimensions 5 x 4 x 1.55 mm  MOSFET Transistors Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay MOSFET Transistors Dimensions 5 x 4 x 1.55 mm   Gate Charge, Total 8/10 nC  Siliconix / Vishay Gate Charge, Total 8/10 nC  MOSFET Transistors Gate Charge, Total 8/10 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 8/10 nC   Height 0.061" (1.55mm)  Siliconix / Vishay Height 0.061" (1.55mm)  MOSFET Transistors Height 0.061" (1.55mm)  Siliconix / Vishay MOSFET Transistors Height 0.061" (1.55mm)   Length 0.196" (5mm)  Siliconix / Vishay Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  Siliconix / Vishay MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type SO-8  Siliconix / Vishay Package Type SO-8  MOSFET Transistors Package Type SO-8  Siliconix / Vishay MOSFET Transistors Package Type SO-8   Polarization N-Channel and P-Channel  Siliconix / Vishay Polarization N-Channel and P-Channel  MOSFET Transistors Polarization N-Channel and P-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel and P-Channel   Power Dissipation 1.13, 1.2 W  Siliconix / Vishay Power Dissipation 1.13, 1.2 W  MOSFET Transistors Power Dissipation 1.13, 1.2 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.13, 1.2 W   Resistance, Drain to Source On 0.075, 0.135 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.075, 0.135 Ω  MOSFET Transistors Resistance, Drain to Source On 0.075, 0.135 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.075, 0.135 Ω   Temperature, Operating -55 to 150 °C  Siliconix / Vishay Temperature, Operating -55 to 150 °C  MOSFET Transistors Temperature, Operating -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating -55 to 150 °C   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 110/105 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 110/105 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 110/105 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 110/105 °C/W   Time, Turn-Off Delay 21, 23 ns  Siliconix / Vishay Time, Turn-Off Delay 21, 23 ns  MOSFET Transistors Time, Turn-Off Delay 21, 23 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 21, 23 ns   Time, Turn-On Delay 8, 12 ns  Siliconix / Vishay Time, Turn-On Delay 8, 12 ns  MOSFET Transistors Time, Turn-On Delay 8, 12 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 8, 12 ns   Transconductance, Forward 5, 11 S  Siliconix / Vishay Transconductance, Forward 5, 11 S  MOSFET Transistors Transconductance, Forward 5, 11 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 5, 11 S   Typical Gate Charge @ Vgs 10 nC @ 10 V, 8 nC @ 10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 10 nC @ 10 V, 8 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 10 nC @ 10 V, 8 nC @ 10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 10 nC @ 10 V, 8 nC @ 10 V   Voltage, Breakdown, Drain to Source 30/-30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 30/-30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30/-30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 30/-30 V   Voltage, Drain to Source -30, 30 V  Siliconix / Vishay Voltage, Drain to Source -30, 30 V  MOSFET Transistors Voltage, Drain to Source -30, 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -30, 30 V   Voltage, Forward, Diode 0.8/-0.82 V  Siliconix / Vishay Voltage, Forward, Diode 0.8/-0.82 V  MOSFET Transistors Voltage, Forward, Diode 0.8/-0.82 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 0.8/-0.82 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.157" (4mm)  Siliconix / Vishay Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  Siliconix / Vishay MOSFET Transistors Width 0.157" (4mm)  
    電話:400-900-3095
    QQ:800152669
    關(guān)于我們 | Amphenol簡介 | Amphenol產(chǎn)品 | Amphenol產(chǎn)品應(yīng)用 | Amphenol動態(tài) | 按系列選型 | 按產(chǎn)品規(guī)格選型 | Amphenol選型手冊 | 付款方式 | 聯(lián)系我們
    Copyright © 2017 training-know-how.com All Rights Reserved. 技術(shù)支持:電子元器件 ICP備案證書號:粵ICP備11103613號