SI4501BDY-T1-GE3 -
SI4501BDY-T1-GE3 Dual N/P-channel MOSFET Transistor, 6.4 A, 12 A, 8V, 30V, 8-Pin SOIC
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- 制造商產(chǎn)品編號(hào):
- SI4501BDY-T1-GE3
- 倉庫庫存編號(hào):
- 70616179
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SI4501BDY-T1-GE3產(chǎn)品概述
Features:
Halogen-Free Option Available
Low-Side Switching
Low On-Resistance: 5 Ω
Low Threshold: 0.9 V (Typ.)
Fast Switching Speed: 35 ns (Typ.)
TrenchFET® Power MOSFETs: 1.5 V Rated
ESD Protected: 2000 V
Applications:
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers