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Features:

Halogen-free According to IEC 61249-2-21Definition

TrenchFET® Power MOSFETs

Compliant to RoHS Directive 2002/95/EC

Brand/Series	SI44 Series
Channel Mode	Enhancement
Channel Type	N
Configuration	Quad Drain, Triple Source
Current, Drain	5 A
Dimensions	5 x 4 x 1.55 mm
Fall Time	15 ns
Gate Charge, Total	36 nC
Height	0.061" (1.55mm)
Length	0.196" (5mm)
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	8
Operating and Storage Temperature	-55 to +150 °C
Package Type	SO-8
Polarization	Dual N-Channel
Power Dissipation	1.4 W
Resistance, Drain to Source On	0.5 Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	40 °C/W
Time, Turn-Off Delay	33 ns
Time, Turn-On Delay	18 ns
Transconductance, Forward	18 S
Typical Gate Charge @ Vgs	35 nC @ 75 V
Voltage, Breakdown, Drain to Source	150 V
Voltage, Drain to Source	150 V
Voltage, Forward, Diode	1 V
Voltage, Gate to Source	±20 V
Width	0.157" (4mm)
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Brand/Series SI44 Series  Siliconix / Vishay Brand/Series SI44 Series  MOSFET Transistors Brand/Series SI44 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI44 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Quad Drain, Triple Source  Siliconix / Vishay Configuration Quad Drain, Triple Source  MOSFET Transistors Configuration Quad Drain, Triple Source  Siliconix / Vishay MOSFET Transistors Configuration Quad Drain, Triple Source   Current, Drain 5 A  Siliconix / Vishay Current, Drain 5 A  MOSFET Transistors Current, Drain 5 A  Siliconix / Vishay MOSFET Transistors Current, Drain 5 A   Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay Dimensions 5 x 4 x 1.55 mm  MOSFET Transistors Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay MOSFET Transistors Dimensions 5 x 4 x 1.55 mm   Fall Time 15 ns  Siliconix / Vishay Fall Time 15 ns  MOSFET Transistors Fall Time 15 ns  Siliconix / Vishay MOSFET Transistors Fall Time 15 ns   Gate Charge, Total 36 nC  Siliconix / Vishay Gate Charge, Total 36 nC  MOSFET Transistors Gate Charge, Total 36 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 36 nC   Height 0.061" (1.55mm)  Siliconix / Vishay Height 0.061" (1.55mm)  MOSFET Transistors Height 0.061" (1.55mm)  Siliconix / Vishay MOSFET Transistors Height 0.061" (1.55mm)   Length 0.196" (5mm)  Siliconix / Vishay Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  Siliconix / Vishay MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type SO-8  Siliconix / Vishay Package Type SO-8  MOSFET Transistors Package Type SO-8  Siliconix / Vishay MOSFET Transistors Package Type SO-8   Polarization Dual N-Channel  Siliconix / Vishay Polarization Dual N-Channel  MOSFET Transistors Polarization Dual N-Channel  Siliconix / Vishay MOSFET Transistors Polarization Dual N-Channel   Power Dissipation 1.4 W  Siliconix / Vishay Power Dissipation 1.4 W  MOSFET Transistors Power Dissipation 1.4 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.4 W   Resistance, Drain to Source On 0.5 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.5 Ω  MOSFET Transistors Resistance, Drain to Source On 0.5 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.5 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 40 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 40 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C/W   Time, Turn-Off Delay 33 ns  Siliconix / Vishay Time, Turn-Off Delay 33 ns  MOSFET Transistors Time, Turn-Off Delay 33 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 33 ns   Time, Turn-On Delay 18 ns  Siliconix / Vishay Time, Turn-On Delay 18 ns  MOSFET Transistors Time, Turn-On Delay 18 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 18 ns   Transconductance, Forward 18 S  Siliconix / Vishay Transconductance, Forward 18 S  MOSFET Transistors Transconductance, Forward 18 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 18 S   Typical Gate Charge @ Vgs 35 nC @ 75 V  Siliconix / Vishay Typical Gate Charge @ Vgs 35 nC @ 75 V  MOSFET Transistors Typical Gate Charge @ Vgs 35 nC @ 75 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 35 nC @ 75 V   Voltage, Breakdown, Drain to Source 150 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 150 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 150 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 150 V   Voltage, Drain to Source 150 V  Siliconix / Vishay Voltage, Drain to Source 150 V  MOSFET Transistors Voltage, Drain to Source 150 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 150 V   Voltage, Forward, Diode 1 V  Siliconix / Vishay Voltage, Forward, Diode 1 V  MOSFET Transistors Voltage, Forward, Diode 1 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.157" (4mm)  Siliconix / Vishay Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  Siliconix / Vishay MOSFET Transistors Width 0.157" (4mm)