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SI4488DY-E3 - 

MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.041Ohm; ID 3.5A; SO-8; PD 1.56W; VGS +/-20V

Siliconix / Vishay SI4488DY-E3
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制造商產(chǎn)品編號(hào):
SI4488DY-E3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026026
技術(shù)數(shù)據(jù)表:
View SI4488DY-E3 Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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SI4488DY-E3產(chǎn)品信息

  Brand/Series  SI44 Series  
  Current, Drain  3.5 A  
  Gate Charge, Total  30 nC  
  Package Type  SO-8  
  Polarization  N-Channel  
  Power Dissipation  1.56 W  
  Resistance, Drain to Source On  0.041 Ohm  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Time, Turn-Off Delay  10 ns  
  Time, Turn-On Delay  12 ns  
  Transconductance, Forward  18 S  
  Voltage, Breakdown, Drain to Source  150 V  
  Voltage, Forward, Diode  0.75 V  
  Voltage, Gate to Source  ±20 V  
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SI4488DY-E3相關(guān)搜索

Brand/Series SI44 Series  Siliconix / Vishay Brand/Series SI44 Series  MOSFET Transistors Brand/Series SI44 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI44 Series   Current, Drain 3.5 A  Siliconix / Vishay Current, Drain 3.5 A  MOSFET Transistors Current, Drain 3.5 A  Siliconix / Vishay MOSFET Transistors Current, Drain 3.5 A   Gate Charge, Total 30 nC  Siliconix / Vishay Gate Charge, Total 30 nC  MOSFET Transistors Gate Charge, Total 30 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 30 nC   Package Type SO-8  Siliconix / Vishay Package Type SO-8  MOSFET Transistors Package Type SO-8  Siliconix / Vishay MOSFET Transistors Package Type SO-8   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 1.56 W  Siliconix / Vishay Power Dissipation 1.56 W  MOSFET Transistors Power Dissipation 1.56 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.56 W   Resistance, Drain to Source On 0.041 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.041 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.041 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.041 Ohm   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Time, Turn-Off Delay 10 ns  Siliconix / Vishay Time, Turn-Off Delay 10 ns  MOSFET Transistors Time, Turn-Off Delay 10 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 10 ns   Time, Turn-On Delay 12 ns  Siliconix / Vishay Time, Turn-On Delay 12 ns  MOSFET Transistors Time, Turn-On Delay 12 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 12 ns   Transconductance, Forward 18 S  Siliconix / Vishay Transconductance, Forward 18 S  MOSFET Transistors Transconductance, Forward 18 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 18 S   Voltage, Breakdown, Drain to Source 150 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 150 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 150 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 150 V   Voltage, Forward, Diode 0.75 V  Siliconix / Vishay Voltage, Forward, Diode 0.75 V  MOSFET Transistors Voltage, Forward, Diode 0.75 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 0.75 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V  
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