Brand/Series |
SI23 Series |
|
Channel Type |
N |
|
Current, Drain |
2.1 A |
|
Fall Time |
25 ns |
|
Gate Charge, Total |
4 nC |
|
Operating and Storage Temperature |
–55 to +150 °C |
|
Package Type |
TO-236 (SOT-23) |
|
Polarization |
N-Channel |
|
Power Dissipation |
0.7 W |
|
Resistance, Drain to Source On |
0.045 Ohm |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Thermal Resistance, Junction to Ambient |
140 °C/W |
|
Time, Rise |
80 ns |
|
Time, Turn-Off Delay |
16 ns |
|
Time, Turn-On Delay |
7 ns |
|
Transconductance, Forward |
8 S |
|
Voltage, Breakdown, Drain to Source |
20 V |
|
Voltage, Drain to Source |
20 V |
|
Voltage, Forward, Diode |
0.76 V |
|
Voltage, Gate to Source |
±8 V |
|
關(guān)鍵詞 |