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SI1958DH-T1-E3 - 

DUAL N-CHANNEL 20-V (D-S) MOSFET

Siliconix / Vishay SI1958DH-T1-E3
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商產(chǎn)品編號(hào):
SI1958DH-T1-E3
倉庫庫存編號(hào):
70026192
技術(shù)數(shù)據(jù)表:
View SI1958DH-T1-E3 Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量,謝謝合作!

SI1958DH-T1-E3產(chǎn)品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • SI1958DH-T1-E3產(chǎn)品信息

      Brand/Series  SI19 Series  
      Capacitance, Input  105 pF @ 10 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  1.3 A  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  2  
      Number of Pins  6  
      Package Type  SOT-363  
      Power Dissipation  1.25 W  
      Resistance, Drain to Source On  0.34 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  10 ns  
      Time, Turn-On Delay  8 ns  
      Transconductance, Forward  5.5 S  
      Typical Gate Charge @ Vgs  2.5 nC @ 10 V  
      Voltage, Drain to Source  20 V  
      Voltage, Forward, Diode  1.2 V  
      Voltage, Gate to Source  ±12 V  
    關(guān)鍵詞         

    SI1958DH-T1-E3相關(guān)搜索

    Brand/Series SI19 Series  Siliconix / Vishay Brand/Series SI19 Series  MOSFET Transistors Brand/Series SI19 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI19 Series   Capacitance, Input 105 pF @ 10 V  Siliconix / Vishay Capacitance, Input 105 pF @ 10 V  MOSFET Transistors Capacitance, Input 105 pF @ 10 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 105 pF @ 10 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 1.3 A  Siliconix / Vishay Current, Drain 1.3 A  MOSFET Transistors Current, Drain 1.3 A  Siliconix / Vishay MOSFET Transistors Current, Drain 1.3 A   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 6  Siliconix / Vishay Number of Pins 6  MOSFET Transistors Number of Pins 6  Siliconix / Vishay MOSFET Transistors Number of Pins 6   Package Type SOT-363  Siliconix / Vishay Package Type SOT-363  MOSFET Transistors Package Type SOT-363  Siliconix / Vishay MOSFET Transistors Package Type SOT-363   Power Dissipation 1.25 W  Siliconix / Vishay Power Dissipation 1.25 W  MOSFET Transistors Power Dissipation 1.25 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.25 W   Resistance, Drain to Source On 0.34 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.34 Ω  MOSFET Transistors Resistance, Drain to Source On 0.34 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.34 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 10 ns  Siliconix / Vishay Time, Turn-Off Delay 10 ns  MOSFET Transistors Time, Turn-Off Delay 10 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 10 ns   Time, Turn-On Delay 8 ns  Siliconix / Vishay Time, Turn-On Delay 8 ns  MOSFET Transistors Time, Turn-On Delay 8 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 8 ns   Transconductance, Forward 5.5 S  Siliconix / Vishay Transconductance, Forward 5.5 S  MOSFET Transistors Transconductance, Forward 5.5 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 5.5 S   Typical Gate Charge @ Vgs 2.5 nC @ 10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 2.5 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 2.5 nC @ 10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 2.5 nC @ 10 V   Voltage, Drain to Source 20 V  Siliconix / Vishay Voltage, Drain to Source 20 V  MOSFET Transistors Voltage, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 20 V   Voltage, Forward, Diode 1.2 V  Siliconix / Vishay Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±12 V  Siliconix / Vishay Voltage, Gate to Source ±12 V  MOSFET Transistors Voltage, Gate to Source ±12 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±12 V  
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