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SI1413EDH-T1-E3 - 

MOSFET; P-CH 20V@2.5VGS ESD Protected

Siliconix / Vishay SI1413EDH-T1-E3
聲明:圖片僅供參考,請以實物為準!
制造商產品編號:
SI1413EDH-T1-E3
倉庫庫存編號:
70026188
技術數據表:
View SI1413EDH-T1-E3 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產品數據庫龐大,部分產品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數量,謝謝合作!

SI1413EDH-T1-E3產品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • SI1413EDH-T1-E3產品信息

      Brand/Series  SI14 Series  
      Channel Mode  Enhancement  
      Channel Type  P  
      Configuration  Quad Drain  
      Current, Drain  -1.6 A  
      Dimensions  2.2 x 1.35 x 1 mm  
      Height  0.039" (1mm)  
      Length  0.086" (2.2mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  6  
      Package Type  SC-70  
      Power Dissipation  1 W  
      Resistance, Drain to Source On  0.22 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  3.9 ns  
      Time, Turn-On Delay  0.75 ns  
      Transconductance, Forward  6 S  
      Typical Gate Charge @ Vgs  5.6 nC @ -4.5 V  
      Voltage, Drain to Source  -20 V  
      Voltage, Forward, Diode  -1.1 V  
      Voltage, Gate to Source  ±12 V  
      Width  0.053" (1.35mm)  
    關鍵詞         

    SI1413EDH-T1-E3相關搜索

    Brand/Series SI14 Series  Siliconix / Vishay Brand/Series SI14 Series  MOSFET Transistors Brand/Series SI14 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI14 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Quad Drain  Siliconix / Vishay Configuration Quad Drain  MOSFET Transistors Configuration Quad Drain  Siliconix / Vishay MOSFET Transistors Configuration Quad Drain   Current, Drain -1.6 A  Siliconix / Vishay Current, Drain -1.6 A  MOSFET Transistors Current, Drain -1.6 A  Siliconix / Vishay MOSFET Transistors Current, Drain -1.6 A   Dimensions 2.2 x 1.35 x 1 mm  Siliconix / Vishay Dimensions 2.2 x 1.35 x 1 mm  MOSFET Transistors Dimensions 2.2 x 1.35 x 1 mm  Siliconix / Vishay MOSFET Transistors Dimensions 2.2 x 1.35 x 1 mm   Height 0.039" (1mm)  Siliconix / Vishay Height 0.039" (1mm)  MOSFET Transistors Height 0.039" (1mm)  Siliconix / Vishay MOSFET Transistors Height 0.039" (1mm)   Length 0.086" (2.2mm)  Siliconix / Vishay Length 0.086" (2.2mm)  MOSFET Transistors Length 0.086" (2.2mm)  Siliconix / Vishay MOSFET Transistors Length 0.086" (2.2mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 6  Siliconix / Vishay Number of Pins 6  MOSFET Transistors Number of Pins 6  Siliconix / Vishay MOSFET Transistors Number of Pins 6   Package Type SC-70  Siliconix / Vishay Package Type SC-70  MOSFET Transistors Package Type SC-70  Siliconix / Vishay MOSFET Transistors Package Type SC-70   Power Dissipation 1 W  Siliconix / Vishay Power Dissipation 1 W  MOSFET Transistors Power Dissipation 1 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1 W   Resistance, Drain to Source On 0.22 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.22 Ω  MOSFET Transistors Resistance, Drain to Source On 0.22 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.22 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 3.9 ns  Siliconix / Vishay Time, Turn-Off Delay 3.9 ns  MOSFET Transistors Time, Turn-Off Delay 3.9 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 3.9 ns   Time, Turn-On Delay 0.75 ns  Siliconix / Vishay Time, Turn-On Delay 0.75 ns  MOSFET Transistors Time, Turn-On Delay 0.75 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 0.75 ns   Transconductance, Forward 6 S  Siliconix / Vishay Transconductance, Forward 6 S  MOSFET Transistors Transconductance, Forward 6 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 6 S   Typical Gate Charge @ Vgs 5.6 nC @ -4.5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 5.6 nC @ -4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 5.6 nC @ -4.5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 5.6 nC @ -4.5 V   Voltage, Drain to Source -20 V  Siliconix / Vishay Voltage, Drain to Source -20 V  MOSFET Transistors Voltage, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -20 V   Voltage, Forward, Diode -1.1 V  Siliconix / Vishay Voltage, Forward, Diode -1.1 V  MOSFET Transistors Voltage, Forward, Diode -1.1 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.1 V   Voltage, Gate to Source ±12 V  Siliconix / Vishay Voltage, Gate to Source ±12 V  MOSFET Transistors Voltage, Gate to Source ±12 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±12 V   Width 0.053" (1.35mm)  Siliconix / Vishay Width 0.053" (1.35mm)  MOSFET Transistors Width 0.053" (1.35mm)  Siliconix / Vishay MOSFET Transistors Width 0.053" (1.35mm)  
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