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TIP31CG - 

ON Semi TIP31CG NPN Bipolar Transistor, 3 A, 100 V, 3-Pin TO-220AB

ON Semiconductor TIP31CG
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制造商產(chǎn)品編號(hào)：
TIP31CG
倉(cāng)庫(kù)庫(kù)存編號(hào)：
70100090
技術(shù)數(shù)據(jù)表：
View TIP31CG Datasheet Datasheet
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TIP31CG產(chǎn)品信息

  Brand/Series  TIP Series  
  Configuration  Dual  
  Current, Collector  3 A  
  Current, Gain  10  
  Dimensions  10.28 x 4.82 x 15.75 mm  
  Frequency, Operating  3 MHz  
  Height  0.62" (15.75mm)  
  Length  0.404" (10.28mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  2  
  Number of Pins  3  
  Package Type  TO-220  
  Polarity  NPN  
  Power Dissipation  2 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  3.125 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +150 °C  
  Transistor Type  NPN  
  Type  Power  
  Voltage, Breakdown, Collector to Emitter  100 V  
  Voltage, Collector to Base  100 V  
  Voltage, Collector to Emitter  100 V  
  Voltage, Collector to Emitter, Saturation  1.2 V  
  Voltage, Emitter to Base  5 V  
  Width  0.19" (4.82mm)  
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TIP31CG相關(guān)搜索

Brand/Series TIP Series  ON Semiconductor Brand/Series TIP Series  Bipolar Transistors Brand/Series TIP Series  ON Semiconductor Bipolar Transistors Brand/Series TIP Series   Configuration Dual  ON Semiconductor Configuration Dual  Bipolar Transistors Configuration Dual  ON Semiconductor Bipolar Transistors Configuration Dual   Current, Collector 3 A  ON Semiconductor Current, Collector 3 A  Bipolar Transistors Current, Collector 3 A  ON Semiconductor Bipolar Transistors Current, Collector 3 A   Current, Gain 10  ON Semiconductor Current, Gain 10  Bipolar Transistors Current, Gain 10  ON Semiconductor Bipolar Transistors Current, Gain 10   Dimensions 10.28 x 4.82 x 15.75 mm  ON Semiconductor Dimensions 10.28 x 4.82 x 15.75 mm  Bipolar Transistors Dimensions 10.28 x 4.82 x 15.75 mm  ON Semiconductor Bipolar Transistors Dimensions 10.28 x 4.82 x 15.75 mm   Frequency, Operating 3 MHz  ON Semiconductor Frequency, Operating 3 MHz  Bipolar Transistors Frequency, Operating 3 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 3 MHz   Height 0.62" (15.75mm)  ON Semiconductor Height 0.62" (15.75mm)  Bipolar Transistors Height 0.62" (15.75mm)  ON Semiconductor Bipolar Transistors Height 0.62" (15.75mm)   Length 0.404" (10.28mm)  ON Semiconductor Length 0.404" (10.28mm)  Bipolar Transistors Length 0.404" (10.28mm)  ON Semiconductor Bipolar Transistors Length 0.404" (10.28mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 2  ON Semiconductor Number of Elements per Chip 2  Bipolar Transistors Number of Elements per Chip 2  ON Semiconductor Bipolar Transistors Number of Elements per Chip 2   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type TO-220  ON Semiconductor Package Type TO-220  Bipolar Transistors Package Type TO-220  ON Semiconductor Bipolar Transistors Package Type TO-220   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 2 W  ON Semiconductor Power Dissipation 2 W  Bipolar Transistors Power Dissipation 2 W  ON Semiconductor Bipolar Transistors Power Dissipation 2 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 3.125 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 3.125 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 3.125 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 3.125 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Temperature, Operating, Range -65 to +150 °C  Bipolar Transistors Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -65 to +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type Power  ON Semiconductor Type Power  Bipolar Transistors Type Power  ON Semiconductor Bipolar Transistors Type Power   Voltage, Breakdown, Collector to Emitter 100 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 100 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V   Voltage, Collector to Base 100 V  ON Semiconductor Voltage, Collector to Base 100 V  Bipolar Transistors Voltage, Collector to Base 100 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 100 V   Voltage, Collector to Emitter 100 V  ON Semiconductor Voltage, Collector to Emitter 100 V  Bipolar Transistors Voltage, Collector to Emitter 100 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 100 V   Voltage, Collector to Emitter, Saturation 1.2 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 1.2 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.2 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.2 V   Voltage, Emitter to Base 5 V  ON Semiconductor Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 5 V   Width 0.19" (4.82mm)  ON Semiconductor Width 0.19" (4.82mm)  Bipolar Transistors Width 0.19" (4.82mm)  ON Semiconductor Bipolar Transistors Width 0.19" (4.82mm)  
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