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NTHD3100CT1G - 

IC, Transistor; Mosfet, Dual P-Channel; 20V; 2.9A; Cut Tape

ON Semiconductor NTHD3100CT1G
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制造商產(chǎn)品編號(hào):
NTHD3100CT1G
倉(cāng)庫(kù)庫(kù)存編號(hào):
70275460
技術(shù)數(shù)據(jù)表:
View NTHD3100CT1G Datasheet Datasheet
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NTHD3100CT1G產(chǎn)品信息

  Brand/Series  NT MOSFET Series  
  Capacitance, Input  165 pF @ 10 V, 680 pF @ -10 V  
  Channel Mode  Enhancement  
  Channel Type  P  
  Configuration  Dual Gate, Dual Source, Quad Drain  
  Current, Drain  -2.3, 2.9 A  
  Dimensions  3.1 x 1.7 x 1 mm  
  Height  0.039" (1mm)  
  Length  0.122" (3.1mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  8  
  Package Type  ChipFET  
  Power Dissipation  1.1 W  
  Resistance, Drain to Source On  110, 115 mΩ  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  16 ns  
  Time, Turn-On Delay  6.3 ns  
  Transconductance, Forward  6, 8 sec  
  Typical Gate Charge @ Vgs  2.3 nC @ 4.5 V, 7.4 nC @ 4.5 V  
  Voltage, Drain to Source  20 V  
  Voltage, Forward, Diode  -1.2, 1.15 V  
  Voltage, Gate to Source  ±12 V  
  Width  0.067" (1.7mm)  
關(guān)鍵詞         

NTHD3100CT1G相關(guān)搜索

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 165 pF @ 10 V, 680 pF @ -10 V  ON Semiconductor Capacitance, Input 165 pF @ 10 V, 680 pF @ -10 V  MOSFET Transistors Capacitance, Input 165 pF @ 10 V, 680 pF @ -10 V  ON Semiconductor MOSFET Transistors Capacitance, Input 165 pF @ 10 V, 680 pF @ -10 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type P  ON Semiconductor Channel Type P  MOSFET Transistors Channel Type P  ON Semiconductor MOSFET Transistors Channel Type P   Configuration Dual Gate, Dual Source, Quad Drain  ON Semiconductor Configuration Dual Gate, Dual Source, Quad Drain  MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain  ON Semiconductor MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain   Current, Drain -2.3, 2.9 A  ON Semiconductor Current, Drain -2.3, 2.9 A  MOSFET Transistors Current, Drain -2.3, 2.9 A  ON Semiconductor MOSFET Transistors Current, Drain -2.3, 2.9 A   Dimensions 3.1 x 1.7 x 1 mm  ON Semiconductor Dimensions 3.1 x 1.7 x 1 mm  MOSFET Transistors Dimensions 3.1 x 1.7 x 1 mm  ON Semiconductor MOSFET Transistors Dimensions 3.1 x 1.7 x 1 mm   Height 0.039" (1mm)  ON Semiconductor Height 0.039" (1mm)  MOSFET Transistors Height 0.039" (1mm)  ON Semiconductor MOSFET Transistors Height 0.039" (1mm)   Length 0.122" (3.1mm)  ON Semiconductor Length 0.122" (3.1mm)  MOSFET Transistors Length 0.122" (3.1mm)  ON Semiconductor MOSFET Transistors Length 0.122" (3.1mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  ON Semiconductor Number of Pins 8  MOSFET Transistors Number of Pins 8  ON Semiconductor MOSFET Transistors Number of Pins 8   Package Type ChipFET  ON Semiconductor Package Type ChipFET  MOSFET Transistors Package Type ChipFET  ON Semiconductor MOSFET Transistors Package Type ChipFET   Power Dissipation 1.1 W  ON Semiconductor Power Dissipation 1.1 W  MOSFET Transistors Power Dissipation 1.1 W  ON Semiconductor MOSFET Transistors Power Dissipation 1.1 W   Resistance, Drain to Source On 110, 115 mΩ  ON Semiconductor Resistance, Drain to Source On 110, 115 mΩ  MOSFET Transistors Resistance, Drain to Source On 110, 115 mΩ  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 110, 115 mΩ   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 16 ns  ON Semiconductor Time, Turn-Off Delay 16 ns  MOSFET Transistors Time, Turn-Off Delay 16 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 16 ns   Time, Turn-On Delay 6.3 ns  ON Semiconductor Time, Turn-On Delay 6.3 ns  MOSFET Transistors Time, Turn-On Delay 6.3 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 6.3 ns   Transconductance, Forward 6, 8 sec  ON Semiconductor Transconductance, Forward 6, 8 sec  MOSFET Transistors Transconductance, Forward 6, 8 sec  ON Semiconductor MOSFET Transistors Transconductance, Forward 6, 8 sec   Typical Gate Charge @ Vgs 2.3 nC @ 4.5 V, 7.4 nC @ 4.5 V  ON Semiconductor Typical Gate Charge @ Vgs 2.3 nC @ 4.5 V, 7.4 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 2.3 nC @ 4.5 V, 7.4 nC @ 4.5 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 2.3 nC @ 4.5 V, 7.4 nC @ 4.5 V   Voltage, Drain to Source 20 V  ON Semiconductor Voltage, Drain to Source 20 V  MOSFET Transistors Voltage, Drain to Source 20 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 20 V   Voltage, Forward, Diode -1.2, 1.15 V  ON Semiconductor Voltage, Forward, Diode -1.2, 1.15 V  MOSFET Transistors Voltage, Forward, Diode -1.2, 1.15 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode -1.2, 1.15 V   Voltage, Gate to Source ±12 V  ON Semiconductor Voltage, Gate to Source ±12 V  MOSFET Transistors Voltage, Gate to Source ±12 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±12 V   Width 0.067" (1.7mm)  ON Semiconductor Width 0.067" (1.7mm)  MOSFET Transistors Width 0.067" (1.7mm)  ON Semiconductor MOSFET Transistors Width 0.067" (1.7mm)  
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