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NTA7002NT1G - 

MOSFET; Single N-Ch; VDSS 30V; RDS(ON) 1.4Ohms; ID 154mA; SC-75/SOT-416; PD 300mW

ON Semiconductor NTA7002NT1G
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制造商產(chǎn)品編號:
NTA7002NT1G
倉庫庫存編號:
70100693
技術(shù)數(shù)據(jù)表:
View NTA7002NT1G Datasheet Datasheet
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NTA7002NT1G產(chǎn)品信息

  Brand/Series  NT MOSFET Series  
  Capacitance, Input  11.5 pF @ 5 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  154 mA  
  Dimensions  1.65 x 0.9 x 0.8 mm  
  Height  0.031" (0.8mm)  
  Length  0.064" (1.65mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  SC-75  
  Polarization  N-Channel  
  Power Dissipation  300 mW  
  Resistance, Drain to Source On  1.4 mΩ  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  98 ns  
  Time, Turn-On Delay  13 ns  
  Transconductance, Forward  80 mS  
  Voltage, Breakdown, Drain to Source  30 V  
  Voltage, Drain to Source  30 V  
  Voltage, Forward, Diode  0.77 V  
  Voltage, Gate to Source  ±10 V  
  Width  0.035" (0.9mm)  
關(guān)鍵詞         

NTA7002NT1G相關(guān)搜索

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 11.5 pF @ 5 V  ON Semiconductor Capacitance, Input 11.5 pF @ 5 V  MOSFET Transistors Capacitance, Input 11.5 pF @ 5 V  ON Semiconductor MOSFET Transistors Capacitance, Input 11.5 pF @ 5 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain 154 mA  ON Semiconductor Current, Drain 154 mA  MOSFET Transistors Current, Drain 154 mA  ON Semiconductor MOSFET Transistors Current, Drain 154 mA   Dimensions 1.65 x 0.9 x 0.8 mm  ON Semiconductor Dimensions 1.65 x 0.9 x 0.8 mm  MOSFET Transistors Dimensions 1.65 x 0.9 x 0.8 mm  ON Semiconductor MOSFET Transistors Dimensions 1.65 x 0.9 x 0.8 mm   Height 0.031" (0.8mm)  ON Semiconductor Height 0.031" (0.8mm)  MOSFET Transistors Height 0.031" (0.8mm)  ON Semiconductor MOSFET Transistors Height 0.031" (0.8mm)   Length 0.064" (1.65mm)  ON Semiconductor Length 0.064" (1.65mm)  MOSFET Transistors Length 0.064" (1.65mm)  ON Semiconductor MOSFET Transistors Length 0.064" (1.65mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  ON Semiconductor MOSFET Transistors Number of Pins 3   Package Type SC-75  ON Semiconductor Package Type SC-75  MOSFET Transistors Package Type SC-75  ON Semiconductor MOSFET Transistors Package Type SC-75   Polarization N-Channel  ON Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  ON Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 300 mW  ON Semiconductor Power Dissipation 300 mW  MOSFET Transistors Power Dissipation 300 mW  ON Semiconductor MOSFET Transistors Power Dissipation 300 mW   Resistance, Drain to Source On 1.4 mΩ  ON Semiconductor Resistance, Drain to Source On 1.4 mΩ  MOSFET Transistors Resistance, Drain to Source On 1.4 mΩ  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 1.4 mΩ   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 98 ns  ON Semiconductor Time, Turn-Off Delay 98 ns  MOSFET Transistors Time, Turn-Off Delay 98 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 98 ns   Time, Turn-On Delay 13 ns  ON Semiconductor Time, Turn-On Delay 13 ns  MOSFET Transistors Time, Turn-On Delay 13 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 13 ns   Transconductance, Forward 80 mS  ON Semiconductor Transconductance, Forward 80 mS  MOSFET Transistors Transconductance, Forward 80 mS  ON Semiconductor MOSFET Transistors Transconductance, Forward 80 mS   Voltage, Breakdown, Drain to Source 30 V  ON Semiconductor Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Drain to Source 30 V  ON Semiconductor Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 0.77 V  ON Semiconductor Voltage, Forward, Diode 0.77 V  MOSFET Transistors Voltage, Forward, Diode 0.77 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode 0.77 V   Voltage, Gate to Source ±10 V  ON Semiconductor Voltage, Gate to Source ±10 V  MOSFET Transistors Voltage, Gate to Source ±10 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±10 V   Width 0.035" (0.9mm)  ON Semiconductor Width 0.035" (0.9mm)  MOSFET Transistors Width 0.035" (0.9mm)  ON Semiconductor MOSFET Transistors Width 0.035" (0.9mm)  
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