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NTA4001NT1G - 

MOSFET; Single N-Ch; VDSS 20V; RDS(ON) 1.5Ohms; ID 238mA; SC-75/SOT-416; PD 300mW

ON Semiconductor NTA4001NT1G
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制造商產(chǎn)品編號(hào):
NTA4001NT1G
倉(cāng)庫(kù)庫(kù)存編號(hào):
70100690
技術(shù)數(shù)據(jù)表:
View NTA4001NT1G Datasheet Datasheet
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NTA4001NT1G產(chǎn)品信息

  Brand/Series  NT MOSFET Series  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  238 mA  
  Length  0.064" (1.65mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  SC-75  
  Polarization  N-Channel  
  Power Dissipation  300 mW  
  Resistance, Drain to Source On  1.5 Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  25 ns  
  Time, Turn-On Delay  13 ns  
  Transconductance, Forward  80  
  Voltage, Breakdown, Drain to Source  20 V  
  Voltage, Drain to Source  20 V  
  Voltage, Forward, Diode  0.66 V  
  Voltage, Gate to Source  ±10 V  
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NTA4001NT1G相關(guān)搜索

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain 238 mA  ON Semiconductor Current, Drain 238 mA  MOSFET Transistors Current, Drain 238 mA  ON Semiconductor MOSFET Transistors Current, Drain 238 mA   Length 0.064" (1.65mm)  ON Semiconductor Length 0.064" (1.65mm)  MOSFET Transistors Length 0.064" (1.65mm)  ON Semiconductor MOSFET Transistors Length 0.064" (1.65mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  ON Semiconductor MOSFET Transistors Number of Pins 3   Package Type SC-75  ON Semiconductor Package Type SC-75  MOSFET Transistors Package Type SC-75  ON Semiconductor MOSFET Transistors Package Type SC-75   Polarization N-Channel  ON Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  ON Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 300 mW  ON Semiconductor Power Dissipation 300 mW  MOSFET Transistors Power Dissipation 300 mW  ON Semiconductor MOSFET Transistors Power Dissipation 300 mW   Resistance, Drain to Source On 1.5 Ω  ON Semiconductor Resistance, Drain to Source On 1.5 Ω  MOSFET Transistors Resistance, Drain to Source On 1.5 Ω  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 1.5 Ω   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 25 ns  ON Semiconductor Time, Turn-Off Delay 25 ns  MOSFET Transistors Time, Turn-Off Delay 25 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 25 ns   Time, Turn-On Delay 13 ns  ON Semiconductor Time, Turn-On Delay 13 ns  MOSFET Transistors Time, Turn-On Delay 13 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 13 ns   Transconductance, Forward 80  ON Semiconductor Transconductance, Forward 80  MOSFET Transistors Transconductance, Forward 80  ON Semiconductor MOSFET Transistors Transconductance, Forward 80   Voltage, Breakdown, Drain to Source 20 V  ON Semiconductor Voltage, Breakdown, Drain to Source 20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V   Voltage, Drain to Source 20 V  ON Semiconductor Voltage, Drain to Source 20 V  MOSFET Transistors Voltage, Drain to Source 20 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 20 V   Voltage, Forward, Diode 0.66 V  ON Semiconductor Voltage, Forward, Diode 0.66 V  MOSFET Transistors Voltage, Forward, Diode 0.66 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode 0.66 V   Voltage, Gate to Source ±10 V  ON Semiconductor Voltage, Gate to Source ±10 V  MOSFET Transistors Voltage, Gate to Source ±10 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±10 V  
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