MPSH10G - 

Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Gain 60  ON Semiconductor Current, Gain 60  Bipolar Transistors Current, Gain 60  ON Semiconductor Bipolar Transistors Current, Gain 60   Dimensions 5.20 x 4.19 x 5.33 mm  ON Semiconductor Dimensions 5.20 x 4.19 x 5.33 mm  Bipolar Transistors Dimensions 5.20 x 4.19 x 5.33 mm  ON Semiconductor Bipolar Transistors Dimensions 5.20 x 4.19 x 5.33 mm   Frequency, Operating 650 MHz  ON Semiconductor Frequency, Operating 650 MHz  Bipolar Transistors Frequency, Operating 650 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 650 MHz   Height 0.21" (5.33mm)  ON Semiconductor Height 0.21" (5.33mm)  Bipolar Transistors Height 0.21" (5.33mm)  ON Semiconductor Bipolar Transistors Height 0.21" (5.33mm)   Length 0.204" (5.2mm)  ON Semiconductor Length 0.204" (5.2mm)  Bipolar Transistors Length 0.204" (5.2mm)  ON Semiconductor Bipolar Transistors Length 0.204" (5.2mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type TO-92  ON Semiconductor Package Type TO-92  Bipolar Transistors Package Type TO-92  ON Semiconductor Bipolar Transistors Package Type TO-92   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 350 W  ON Semiconductor Power Dissipation 350 W  Bipolar Transistors Power Dissipation 350 W  ON Semiconductor Bipolar Transistors Power Dissipation 350 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 125 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 125 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 125 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 125 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type VHF/UHF  ON Semiconductor Type VHF/UHF  Bipolar Transistors Type VHF/UHF  ON Semiconductor Bipolar Transistors Type VHF/UHF   Voltage, Breakdown, Collector to Emitter 25 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 25 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 25 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 25 V   Voltage, Collector to Base 30 V  ON Semiconductor Voltage, Collector to Base 30 V  Bipolar Transistors Voltage, Collector to Base 30 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 30 V   Voltage, Collector to Emitter 25 V  ON Semiconductor Voltage, Collector to Emitter 25 V  Bipolar Transistors Voltage, Collector to Emitter 25 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 25 V   Voltage, Collector to Emitter, Saturation 0.5 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 0.5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.5 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.5 V   Voltage, Emitter to Base 3 V  ON Semiconductor Voltage, Emitter to Base 3 V  Bipolar Transistors Voltage, Emitter to Base 3 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 3 V   Width 0.165" (4.19mm)  ON Semiconductor Width 0.165" (4.19mm)  Bipolar Transistors Width 0.165" (4.19mm)  ON Semiconductor Bipolar Transistors Width 0.165" (4.19mm)