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MMBF170LT1G - 

MOSFET, Power; N-Ch; VDSS 60VDC; RDS(ON) 5Ohms; ID 0.5A; SOT-23 (TO-236); PD 225mW

ON Semiconductor MMBF170LT1G
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制造商產(chǎn)品編號(hào):
MMBF170LT1G
倉(cāng)庫(kù)庫(kù)存編號(hào):
70099526
技術(shù)數(shù)據(jù)表:
View MMBF170LT1G Datasheet Datasheet
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MMBF170LT1G產(chǎn)品信息

  Brand/Series  JFET Series  
  Capacitance, Input  Maximum of 60 pF @ 10 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  0.5 A  
  Dimensions  3.04 x 1.4 x 1.01 mm  
  Height  0.04" (1.01mm)  
  Length  0.119" (3.04mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  SOT-23  
  Polarization  N-Channel  
  Power Dissipation  225 mW  
  Resistance, Drain to Source On  5 Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  Maximum of 10 ns  
  Time, Turn-On Delay  Maximum of 10 ns  
  Voltage, Breakdown, Drain to Source  60 V  
  Voltage, Drain to Source  60 V  
  Voltage, Gate to Source  ±40 V  
  Width  0.055" (1.4mm)  
關(guān)鍵詞         

MMBF170LT1G相關(guān)搜索

Brand/Series JFET Series  ON Semiconductor Brand/Series JFET Series  MOSFET Transistors Brand/Series JFET Series  ON Semiconductor MOSFET Transistors Brand/Series JFET Series   Capacitance, Input Maximum of 60 pF @ 10 V  ON Semiconductor Capacitance, Input Maximum of 60 pF @ 10 V  MOSFET Transistors Capacitance, Input Maximum of 60 pF @ 10 V  ON Semiconductor MOSFET Transistors Capacitance, Input Maximum of 60 pF @ 10 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain 0.5 A  ON Semiconductor Current, Drain 0.5 A  MOSFET Transistors Current, Drain 0.5 A  ON Semiconductor MOSFET Transistors Current, Drain 0.5 A   Dimensions 3.04 x 1.4 x 1.01 mm  ON Semiconductor Dimensions 3.04 x 1.4 x 1.01 mm  MOSFET Transistors Dimensions 3.04 x 1.4 x 1.01 mm  ON Semiconductor MOSFET Transistors Dimensions 3.04 x 1.4 x 1.01 mm   Height 0.04" (1.01mm)  ON Semiconductor Height 0.04" (1.01mm)  MOSFET Transistors Height 0.04" (1.01mm)  ON Semiconductor MOSFET Transistors Height 0.04" (1.01mm)   Length 0.119" (3.04mm)  ON Semiconductor Length 0.119" (3.04mm)  MOSFET Transistors Length 0.119" (3.04mm)  ON Semiconductor MOSFET Transistors Length 0.119" (3.04mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  ON Semiconductor MOSFET Transistors Number of Pins 3   Package Type SOT-23  ON Semiconductor Package Type SOT-23  MOSFET Transistors Package Type SOT-23  ON Semiconductor MOSFET Transistors Package Type SOT-23   Polarization N-Channel  ON Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  ON Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 225 mW  ON Semiconductor Power Dissipation 225 mW  MOSFET Transistors Power Dissipation 225 mW  ON Semiconductor MOSFET Transistors Power Dissipation 225 mW   Resistance, Drain to Source On 5 Ω  ON Semiconductor Resistance, Drain to Source On 5 Ω  MOSFET Transistors Resistance, Drain to Source On 5 Ω  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 5 Ω   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay Maximum of 10 ns  ON Semiconductor Time, Turn-Off Delay Maximum of 10 ns  MOSFET Transistors Time, Turn-Off Delay Maximum of 10 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay Maximum of 10 ns   Time, Turn-On Delay Maximum of 10 ns  ON Semiconductor Time, Turn-On Delay Maximum of 10 ns  MOSFET Transistors Time, Turn-On Delay Maximum of 10 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay Maximum of 10 ns   Voltage, Breakdown, Drain to Source 60 V  ON Semiconductor Voltage, Breakdown, Drain to Source 60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V   Voltage, Drain to Source 60 V  ON Semiconductor Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Gate to Source ±40 V  ON Semiconductor Voltage, Gate to Source ±40 V  MOSFET Transistors Voltage, Gate to Source ±40 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±40 V   Width 0.055" (1.4mm)  ON Semiconductor Width 0.055" (1.4mm)  MOSFET Transistors Width 0.055" (1.4mm)  ON Semiconductor MOSFET Transistors Width 0.055" (1.4mm)  
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