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MMBD352LT1G
MMBD352LT1G -
DIODE, MIXER; 10MA IF; 300 MW @ 25C; 556C/W (MAX.); 1 PF (MAX.); SOT-23
聲明:圖片僅供參考,請以實物為準(zhǔn)!
制造商:
ON Semiconductor
ON Semiconductor
制造商產(chǎn)品編號:
MMBD352LT1G
倉庫庫存編號:
70099522
技術(shù)數(shù)據(jù)表:
Datasheet
訂購熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數(shù)量,謝謝合作!
MMBD352LT1G產(chǎn)品概述
RF Band Switching Diodes, ON Semiconductor
RF (Radio Frequency) diodes suitable for use in HF, RF and Microwave mixing and detection applications.
MMBD352LT1G產(chǎn)品信息
Brand/Series
Diode Rectifier Series
Capacitance, Junction
1 pF
Configuration
Dual
Current, Forward
10 mA
Package Type
SOT-23
Power Dissipation
225 mW
Primary Type
Schottky Barrier
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Voltage, Forward
0.6 V
Voltage, Reverse
7 V
關(guān)鍵詞
MMBD352LT1G相關(guān)搜索
Brand/Series Diode Rectifier Series
ON Semiconductor Brand/Series Diode Rectifier Series
Rectifier & Schottky Diodes Brand/Series Diode Rectifier Series
ON Semiconductor Rectifier & Schottky Diodes Brand/Series Diode Rectifier Series
Capacitance, Junction 1 pF
ON Semiconductor Capacitance, Junction 1 pF
Rectifier & Schottky Diodes Capacitance, Junction 1 pF
ON Semiconductor Rectifier & Schottky Diodes Capacitance, Junction 1 pF
Configuration Dual
ON Semiconductor Configuration Dual
Rectifier & Schottky Diodes Configuration Dual
ON Semiconductor Rectifier & Schottky Diodes Configuration Dual
Current, Forward 10 mA
ON Semiconductor Current, Forward 10 mA
Rectifier & Schottky Diodes Current, Forward 10 mA
ON Semiconductor Rectifier & Schottky Diodes Current, Forward 10 mA
Package Type SOT-23
ON Semiconductor Package Type SOT-23
Rectifier & Schottky Diodes Package Type SOT-23
ON Semiconductor Rectifier & Schottky Diodes Package Type SOT-23
Power Dissipation 225 mW
ON Semiconductor Power Dissipation 225 mW
Rectifier & Schottky Diodes Power Dissipation 225 mW
ON Semiconductor Rectifier & Schottky Diodes Power Dissipation 225 mW
Primary Type Schottky Barrier
ON Semiconductor Primary Type Schottky Barrier
Rectifier & Schottky Diodes Primary Type Schottky Barrier
ON Semiconductor Rectifier & Schottky Diodes Primary Type Schottky Barrier
Temperature, Junction, Maximum +150 °C
ON Semiconductor Temperature, Junction, Maximum +150 °C
Rectifier & Schottky Diodes Temperature, Junction, Maximum +150 °C
ON Semiconductor Rectifier & Schottky Diodes Temperature, Junction, Maximum +150 °C
Temperature, Operating -55 to +150 °C
ON Semiconductor Temperature, Operating -55 to +150 °C
Rectifier & Schottky Diodes Temperature, Operating -55 to +150 °C
ON Semiconductor Rectifier & Schottky Diodes Temperature, Operating -55 to +150 °C
Voltage, Forward 0.6 V
ON Semiconductor Voltage, Forward 0.6 V
Rectifier & Schottky Diodes Voltage, Forward 0.6 V
ON Semiconductor Rectifier & Schottky Diodes Voltage, Forward 0.6 V
Voltage, Reverse 7 V
ON Semiconductor Voltage, Reverse 7 V
Rectifier & Schottky Diodes Voltage, Reverse 7 V
ON Semiconductor Rectifier & Schottky Diodes Voltage, Reverse 7 V
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sales@szcwdz.com
Q Q:
800152669
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