amphenol代理商
專業(yè)銷(xiāo)售Amphenol(安費(fèi)諾)全系列產(chǎn)品-英國(guó)2號(hào)倉(cāng)庫(kù)
美國(guó)1號(hào)分類選型新加坡2號(hào)分類選型英國(guó)10號(hào)分類選型英國(guó)2號(hào)分類選型日本5號(hào)分類選型

在本站結(jié)果里搜索:    
熱門(mén)搜索詞:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

MJ802G - 

ON Semi MJ802G NPN Bipolar Transistor, 30 A, 90 V, 2-Pin TO-204AA

ON Semiconductor MJ802G
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商產(chǎn)品編號(hào):
MJ802G
倉(cāng)庫(kù)庫(kù)存編號(hào):
70100001
技術(shù)數(shù)據(jù)表:
View MJ802G Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷(xiāo)售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!

MJ802G產(chǎn)品概述

NPN Power Transistors, ON Semiconductor
These ON Semiconductor transistors can amplify analog or digital signals. They can also switch DC or function as an oscillator.

MJ802G產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  30 A  
  Current, Gain  25  
  Dimensions  39.37 x 8.51 x 26.67 mm  
  Frequency, Operating  2 MHz  
  Height  1.05" (26.67mm)  
  Length  1.55" (39.37mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  2  
  Package Type  TO-204AA  
  Polarity  NPN  
  Power Dissipation  200 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  0.875 °C/W  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +200 °C  
  Transistor Type  NPN  
  Type  High Power  
  Voltage, Breakdown, Collector to Emitter  100 V  
  Voltage, Collector to Base  100 V  
  Voltage, Collector to Emitter  100 V  
  Voltage, Collector to Emitter, Saturation  0.8 V  
  Voltage, Emitter to Base  4 V  
  Voltage, Saturation, Base to Emitter  1.3 V  
  Width  0.335" (8.51mm)  
關(guān)鍵詞         

MJ802G客戶還搜索了

  • 參考圖片
  • 制造商 / 說(shuō)明 / 型號(hào) / 倉(cāng)庫(kù)庫(kù)存編號(hào)
  • PDF
  • 操作

MJ802G相關(guān)搜索

Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 30 A  ON Semiconductor Current, Collector 30 A  Bipolar Transistors Current, Collector 30 A  ON Semiconductor Bipolar Transistors Current, Collector 30 A   Current, Gain 25  ON Semiconductor Current, Gain 25  Bipolar Transistors Current, Gain 25  ON Semiconductor Bipolar Transistors Current, Gain 25   Dimensions 39.37 x 8.51 x 26.67 mm  ON Semiconductor Dimensions 39.37 x 8.51 x 26.67 mm  Bipolar Transistors Dimensions 39.37 x 8.51 x 26.67 mm  ON Semiconductor Bipolar Transistors Dimensions 39.37 x 8.51 x 26.67 mm   Frequency, Operating 2 MHz  ON Semiconductor Frequency, Operating 2 MHz  Bipolar Transistors Frequency, Operating 2 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 2 MHz   Height 1.05" (26.67mm)  ON Semiconductor Height 1.05" (26.67mm)  Bipolar Transistors Height 1.05" (26.67mm)  ON Semiconductor Bipolar Transistors Height 1.05" (26.67mm)   Length 1.55" (39.37mm)  ON Semiconductor Length 1.55" (39.37mm)  Bipolar Transistors Length 1.55" (39.37mm)  ON Semiconductor Bipolar Transistors Length 1.55" (39.37mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 2  ON Semiconductor Number of Pins 2  Bipolar Transistors Number of Pins 2  ON Semiconductor Bipolar Transistors Number of Pins 2   Package Type TO-204AA  ON Semiconductor Package Type TO-204AA  Bipolar Transistors Package Type TO-204AA  ON Semiconductor Bipolar Transistors Package Type TO-204AA   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 200 W  ON Semiconductor Power Dissipation 200 W  Bipolar Transistors Power Dissipation 200 W  ON Semiconductor Bipolar Transistors Power Dissipation 200 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 0.875 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 0.875 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 0.875 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 0.875 °C/W   Temperature, Operating, Maximum +200 °C  ON Semiconductor Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  ON Semiconductor Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type High Power  ON Semiconductor Type High Power  Bipolar Transistors Type High Power  ON Semiconductor Bipolar Transistors Type High Power   Voltage, Breakdown, Collector to Emitter 100 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 100 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V   Voltage, Collector to Base 100 V  ON Semiconductor Voltage, Collector to Base 100 V  Bipolar Transistors Voltage, Collector to Base 100 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 100 V   Voltage, Collector to Emitter 100 V  ON Semiconductor Voltage, Collector to Emitter 100 V  Bipolar Transistors Voltage, Collector to Emitter 100 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 100 V   Voltage, Collector to Emitter, Saturation 0.8 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 0.8 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.8 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.8 V   Voltage, Emitter to Base 4 V  ON Semiconductor Voltage, Emitter to Base 4 V  Bipolar Transistors Voltage, Emitter to Base 4 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 4 V   Voltage, Saturation, Base to Emitter 1.3 V  ON Semiconductor Voltage, Saturation, Base to Emitter 1.3 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.3 V  ON Semiconductor Bipolar Transistors Voltage, Saturation, Base to Emitter 1.3 V   Width 0.335" (8.51mm)  ON Semiconductor Width 0.335" (8.51mm)  Bipolar Transistors Width 0.335" (8.51mm)  ON Semiconductor Bipolar Transistors Width 0.335" (8.51mm)  
電話:400-900-3095
QQ:800152669
關(guān)于我們 | Amphenol簡(jiǎn)介 | Amphenol產(chǎn)品 | Amphenol產(chǎn)品應(yīng)用 | Amphenol動(dòng)態(tài) | 按系列選型 | 按產(chǎn)品規(guī)格選型 | Amphenol選型手冊(cè) | 付款方式 | 聯(lián)系我們
Copyright © 2017 www.training-know-how.com All Rights Reserved. 技術(shù)支持:電子元器件 ICP備案證書(shū)號(hào):粵ICP備11103613號(hào)