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MJ15003G - 

ON Semi MJ15003G NPN Bipolar Transistor, 20 A, 140 V, 2-Pin TO-204AA

ON Semiconductor MJ15003G
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制造商產(chǎn)品編號(hào):
MJ15003G
倉庫庫存編號(hào):
70099991
技術(shù)數(shù)據(jù)表:
View MJ15003G Datasheet Datasheet
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MJ15003G產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  20 A  
  Current, Gain  25  
  Dimensions  39.37 x 8.51 x 26.67 mm  
  Frequency, Operating  2 MHz  
  Height  1.05" (26.67mm)  
  Length  1.55" (39.37mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  2  
  Package Type  TO-204AA  
  Polarity  NPN  
  Power Dissipation  250 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  0.7 °C/W  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +200 °C  
  Transistor Type  NPN  
  Type  Power  
  Voltage, Breakdown, Collector to Emitter  140 V  
  Voltage, Collector to Base  140 V  
  Voltage, Collector to Emitter  140 V  
  Voltage, Collector to Emitter, Saturation  1 V  
  Voltage, Emitter to Base  5 V  
  Width  0.335" (8.51mm)  
關(guān)鍵詞         

MJ15003G相關(guān)搜索

Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 20 A  ON Semiconductor Current, Collector 20 A  Bipolar Transistors Current, Collector 20 A  ON Semiconductor Bipolar Transistors Current, Collector 20 A   Current, Gain 25  ON Semiconductor Current, Gain 25  Bipolar Transistors Current, Gain 25  ON Semiconductor Bipolar Transistors Current, Gain 25   Dimensions 39.37 x 8.51 x 26.67 mm  ON Semiconductor Dimensions 39.37 x 8.51 x 26.67 mm  Bipolar Transistors Dimensions 39.37 x 8.51 x 26.67 mm  ON Semiconductor Bipolar Transistors Dimensions 39.37 x 8.51 x 26.67 mm   Frequency, Operating 2 MHz  ON Semiconductor Frequency, Operating 2 MHz  Bipolar Transistors Frequency, Operating 2 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 2 MHz   Height 1.05" (26.67mm)  ON Semiconductor Height 1.05" (26.67mm)  Bipolar Transistors Height 1.05" (26.67mm)  ON Semiconductor Bipolar Transistors Height 1.05" (26.67mm)   Length 1.55" (39.37mm)  ON Semiconductor Length 1.55" (39.37mm)  Bipolar Transistors Length 1.55" (39.37mm)  ON Semiconductor Bipolar Transistors Length 1.55" (39.37mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 2  ON Semiconductor Number of Pins 2  Bipolar Transistors Number of Pins 2  ON Semiconductor Bipolar Transistors Number of Pins 2   Package Type TO-204AA  ON Semiconductor Package Type TO-204AA  Bipolar Transistors Package Type TO-204AA  ON Semiconductor Bipolar Transistors Package Type TO-204AA   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 250 W  ON Semiconductor Power Dissipation 250 W  Bipolar Transistors Power Dissipation 250 W  ON Semiconductor Bipolar Transistors Power Dissipation 250 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 0.7 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 0.7 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 0.7 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 0.7 °C/W   Temperature, Operating, Maximum +200 °C  ON Semiconductor Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  ON Semiconductor Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type Power  ON Semiconductor Type Power  Bipolar Transistors Type Power  ON Semiconductor Bipolar Transistors Type Power   Voltage, Breakdown, Collector to Emitter 140 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 140 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 140 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 140 V   Voltage, Collector to Base 140 V  ON Semiconductor Voltage, Collector to Base 140 V  Bipolar Transistors Voltage, Collector to Base 140 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 140 V   Voltage, Collector to Emitter 140 V  ON Semiconductor Voltage, Collector to Emitter 140 V  Bipolar Transistors Voltage, Collector to Emitter 140 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 140 V   Voltage, Collector to Emitter, Saturation 1 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 1 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V   Voltage, Emitter to Base 5 V  ON Semiconductor Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 5 V   Width 0.335" (8.51mm)  ON Semiconductor Width 0.335" (8.51mm)  Bipolar Transistors Width 0.335" (8.51mm)  ON Semiconductor Bipolar Transistors Width 0.335" (8.51mm)  
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