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MBT3904DW1T1G - 

ON Semi MBT3904DW1T1G Dual NPN Bipolar Transistor, 0.2 A, 40 V, 6-Pin SOT-363

ON Semiconductor MBT3904DW1T1G
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制造商產(chǎn)品編號:
MBT3904DW1T1G
倉庫庫存編號:
70099511
技術(shù)數(shù)據(jù)表:
View MBT3904DW1T1G Datasheet Datasheet
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MBT3904DW1T1G產(chǎn)品概述

Small Signal NPN Transistors, ON Semiconductor
These ON Semiconductor Bipolar transistors can amplify analog or digital signals. They can also switch DC or function as an oscillator.

MBT3904DW1T1G產(chǎn)品信息

  Brand/Series  MBT Series  
  Configuration  Common Base  
  Current, Collector  200 mA  
  Current, Gain  30  
  Dimensions  2.20 x 1.35 x 1.00 mm  
  Frequency, Operating  300 MHz  
  Height  0.039" (1mm)  
  Length  0.086" (2.2mm)  
  Material  Si  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  6  
  Package Type  SOT-363  
  Polarity  NPN  
  Power Dissipation  150 mW  
  Primary Type  Si  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  NPN  
  Type  General Purpose  
  Voltage, Breakdown, Collector to Emitter  40 V  
  Voltage, Collector to Base  60 V  
  Voltage, Collector to Emitter  40 V  
  Voltage, Collector to Emitter, Saturation  0.3 V  
  Voltage, Emitter to Base  6 V  
  Voltage, Saturation, Base to Emitter  0.95 V  
  Width  0.053" (1.35mm)  
關(guān)鍵詞         

MBT3904DW1T1G相關(guān)搜索

Brand/Series MBT Series  ON Semiconductor Brand/Series MBT Series  Bipolar Transistors Brand/Series MBT Series  ON Semiconductor Bipolar Transistors Brand/Series MBT Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 200 mA  ON Semiconductor Current, Collector 200 mA  Bipolar Transistors Current, Collector 200 mA  ON Semiconductor Bipolar Transistors Current, Collector 200 mA   Current, Gain 30  ON Semiconductor Current, Gain 30  Bipolar Transistors Current, Gain 30  ON Semiconductor Bipolar Transistors Current, Gain 30   Dimensions 2.20 x 1.35 x 1.00 mm  ON Semiconductor Dimensions 2.20 x 1.35 x 1.00 mm  Bipolar Transistors Dimensions 2.20 x 1.35 x 1.00 mm  ON Semiconductor Bipolar Transistors Dimensions 2.20 x 1.35 x 1.00 mm   Frequency, Operating 300 MHz  ON Semiconductor Frequency, Operating 300 MHz  Bipolar Transistors Frequency, Operating 300 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 300 MHz   Height 0.039" (1mm)  ON Semiconductor Height 0.039" (1mm)  Bipolar Transistors Height 0.039" (1mm)  ON Semiconductor Bipolar Transistors Height 0.039" (1mm)   Length 0.086" (2.2mm)  ON Semiconductor Length 0.086" (2.2mm)  Bipolar Transistors Length 0.086" (2.2mm)  ON Semiconductor Bipolar Transistors Length 0.086" (2.2mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  Bipolar Transistors Mounting Type Surface Mount  ON Semiconductor Bipolar Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 6  ON Semiconductor Number of Pins 6  Bipolar Transistors Number of Pins 6  ON Semiconductor Bipolar Transistors Number of Pins 6   Package Type SOT-363  ON Semiconductor Package Type SOT-363  Bipolar Transistors Package Type SOT-363  ON Semiconductor Bipolar Transistors Package Type SOT-363   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 150 mW  ON Semiconductor Power Dissipation 150 mW  Bipolar Transistors Power Dissipation 150 mW  ON Semiconductor Bipolar Transistors Power Dissipation 150 mW   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type General Purpose  ON Semiconductor Type General Purpose  Bipolar Transistors Type General Purpose  ON Semiconductor Bipolar Transistors Type General Purpose   Voltage, Breakdown, Collector to Emitter 40 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 40 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 40 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 40 V   Voltage, Collector to Base 60 V  ON Semiconductor Voltage, Collector to Base 60 V  Bipolar Transistors Voltage, Collector to Base 60 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 60 V   Voltage, Collector to Emitter 40 V  ON Semiconductor Voltage, Collector to Emitter 40 V  Bipolar Transistors Voltage, Collector to Emitter 40 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 40 V   Voltage, Collector to Emitter, Saturation 0.3 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 0.3 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.3 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.3 V   Voltage, Emitter to Base 6 V  ON Semiconductor Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Base to Emitter 0.95 V  ON Semiconductor Voltage, Saturation, Base to Emitter 0.95 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 0.95 V  ON Semiconductor Bipolar Transistors Voltage, Saturation, Base to Emitter 0.95 V   Width 0.053" (1.35mm)  ON Semiconductor Width 0.053" (1.35mm)  Bipolar Transistors Width 0.053" (1.35mm)  ON Semiconductor Bipolar Transistors Width 0.053" (1.35mm)  
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