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BSP19AT1G - 

ON Semi BSP19AT1G NPN High Voltage Bipolar Transistor, 0.1 A, 350V, 3-Pin TO-261AA

ON Semiconductor BSP19AT1G
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制造商產品編號:
BSP19AT1G
倉庫庫存編號:
70100376
技術數(shù)據(jù)表:
View BSP19AT1G Datasheet Datasheet
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BSP19AT1G產品信息

  Brand/Series  BSP Series  
  Configuration  Common Base  
  Current, Collector  100 mA  
  Current, Gain  40  
  Dimensions  6.70 x 3.70 x 1.65 mm  
  Frequency, Operating  70 MHz  
  Height  0.065" (1.65mm)  
  Length  0.263" (6.7mm)  
  Material  Si  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-261AA  
  Polarity  NPN  
  Power Dissipation  0.8 W  
  Primary Type  Si  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +150 °C  
  Transistor Type  NPN  
  Type  Power  
  Voltage, Breakdown, Collector to Emitter  350 V  
  Voltage, Collector to Base  400 V  
  Voltage, Collector to Emitter  350 V  
  Voltage, Collector to Emitter, Saturation  0.5 V  
  Voltage, Emitter to Base  5 V  
  Voltage, Saturation, Base to Emitter  1.3 V  
  Width  0.146" (3.7mm)  
關鍵詞         

BSP19AT1G相關搜索

Brand/Series BSP Series  ON Semiconductor Brand/Series BSP Series  Bipolar Transistors Brand/Series BSP Series  ON Semiconductor Bipolar Transistors Brand/Series BSP Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 100 mA  ON Semiconductor Current, Collector 100 mA  Bipolar Transistors Current, Collector 100 mA  ON Semiconductor Bipolar Transistors Current, Collector 100 mA   Current, Gain 40  ON Semiconductor Current, Gain 40  Bipolar Transistors Current, Gain 40  ON Semiconductor Bipolar Transistors Current, Gain 40   Dimensions 6.70 x 3.70 x 1.65 mm  ON Semiconductor Dimensions 6.70 x 3.70 x 1.65 mm  Bipolar Transistors Dimensions 6.70 x 3.70 x 1.65 mm  ON Semiconductor Bipolar Transistors Dimensions 6.70 x 3.70 x 1.65 mm   Frequency, Operating 70 MHz  ON Semiconductor Frequency, Operating 70 MHz  Bipolar Transistors Frequency, Operating 70 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 70 MHz   Height 0.065" (1.65mm)  ON Semiconductor Height 0.065" (1.65mm)  Bipolar Transistors Height 0.065" (1.65mm)  ON Semiconductor Bipolar Transistors Height 0.065" (1.65mm)   Length 0.263" (6.7mm)  ON Semiconductor Length 0.263" (6.7mm)  Bipolar Transistors Length 0.263" (6.7mm)  ON Semiconductor Bipolar Transistors Length 0.263" (6.7mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  Bipolar Transistors Mounting Type Surface Mount  ON Semiconductor Bipolar Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type TO-261AA  ON Semiconductor Package Type TO-261AA  Bipolar Transistors Package Type TO-261AA  ON Semiconductor Bipolar Transistors Package Type TO-261AA   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 0.8 W  ON Semiconductor Power Dissipation 0.8 W  Bipolar Transistors Power Dissipation 0.8 W  ON Semiconductor Bipolar Transistors Power Dissipation 0.8 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Temperature, Operating, Range -65 to +150 °C  Bipolar Transistors Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -65 to +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type Power  ON Semiconductor Type Power  Bipolar Transistors Type Power  ON Semiconductor Bipolar Transistors Type Power   Voltage, Breakdown, Collector to Emitter 350 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 350 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 350 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 350 V   Voltage, Collector to Base 400 V  ON Semiconductor Voltage, Collector to Base 400 V  Bipolar Transistors Voltage, Collector to Base 400 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 400 V   Voltage, Collector to Emitter 350 V  ON Semiconductor Voltage, Collector to Emitter 350 V  Bipolar Transistors Voltage, Collector to Emitter 350 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 350 V   Voltage, Collector to Emitter, Saturation 0.5 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 0.5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.5 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.5 V   Voltage, Emitter to Base 5 V  ON Semiconductor Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Saturation, Base to Emitter 1.3 V  ON Semiconductor Voltage, Saturation, Base to Emitter 1.3 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.3 V  ON Semiconductor Bipolar Transistors Voltage, Saturation, Base to Emitter 1.3 V   Width 0.146" (3.7mm)  ON Semiconductor Width 0.146" (3.7mm)  Bipolar Transistors Width 0.146" (3.7mm)  ON Semiconductor Bipolar Transistors Width 0.146" (3.7mm)  
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