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BS107ARL1G - 

MOSFET; N-Ch; VDSS 200VDC; RDS(ON) 14 Ohms; ID 250mA; TO-92 (TO-226); PD 350mW; -55degc

ON Semiconductor BS107ARL1G
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制造商產(chǎn)品編號(hào):
BS107ARL1G
倉(cāng)庫(kù)庫(kù)存編號(hào):
70100375
技術(shù)數(shù)據(jù)表:
View BS107ARL1G Datasheet Datasheet
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BS107ARL1G產(chǎn)品信息

  Brand/Series  BS Series  
  Capacitance, Input  60 pF @ 25 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  250 mA  
  Dimensions  4.45 x 3.18 x 4.32 mm  
  Height  0.17" (4.32mm)  
  Length  0.175" (4.45mm)  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-92  
  Polarization  N-Channel  
  Power Dissipation  350 mW  
  Resistance, Drain to Source On  6.4 Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  12 ns  
  Time, Turn-On Delay  6 ns  
  Transconductance, Forward  400 mS  
  Voltage, Breakdown, Drain to Source  200 V  
  Voltage, Drain to Source  200 V  
  Voltage, Gate to Source  ±20 V  
  Width  0.125" <1/8> (3.2mm)  
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BS107ARL1G相關(guān)搜索

Brand/Series BS Series  ON Semiconductor Brand/Series BS Series  MOSFET Transistors Brand/Series BS Series  ON Semiconductor MOSFET Transistors Brand/Series BS Series   Capacitance, Input 60 pF @ 25 V  ON Semiconductor Capacitance, Input 60 pF @ 25 V  MOSFET Transistors Capacitance, Input 60 pF @ 25 V  ON Semiconductor MOSFET Transistors Capacitance, Input 60 pF @ 25 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain 250 mA  ON Semiconductor Current, Drain 250 mA  MOSFET Transistors Current, Drain 250 mA  ON Semiconductor MOSFET Transistors Current, Drain 250 mA   Dimensions 4.45 x 3.18 x 4.32 mm  ON Semiconductor Dimensions 4.45 x 3.18 x 4.32 mm  MOSFET Transistors Dimensions 4.45 x 3.18 x 4.32 mm  ON Semiconductor MOSFET Transistors Dimensions 4.45 x 3.18 x 4.32 mm   Height 0.17" (4.32mm)  ON Semiconductor Height 0.17" (4.32mm)  MOSFET Transistors Height 0.17" (4.32mm)  ON Semiconductor MOSFET Transistors Height 0.17" (4.32mm)   Length 0.175" (4.45mm)  ON Semiconductor Length 0.175" (4.45mm)  MOSFET Transistors Length 0.175" (4.45mm)  ON Semiconductor MOSFET Transistors Length 0.175" (4.45mm)   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  ON Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  ON Semiconductor MOSFET Transistors Number of Pins 3   Package Type TO-92  ON Semiconductor Package Type TO-92  MOSFET Transistors Package Type TO-92  ON Semiconductor MOSFET Transistors Package Type TO-92   Polarization N-Channel  ON Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  ON Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 350 mW  ON Semiconductor Power Dissipation 350 mW  MOSFET Transistors Power Dissipation 350 mW  ON Semiconductor MOSFET Transistors Power Dissipation 350 mW   Resistance, Drain to Source On 6.4 Ω  ON Semiconductor Resistance, Drain to Source On 6.4 Ω  MOSFET Transistors Resistance, Drain to Source On 6.4 Ω  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 6.4 Ω   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 12 ns  ON Semiconductor Time, Turn-Off Delay 12 ns  MOSFET Transistors Time, Turn-Off Delay 12 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 12 ns   Time, Turn-On Delay 6 ns  ON Semiconductor Time, Turn-On Delay 6 ns  MOSFET Transistors Time, Turn-On Delay 6 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 6 ns   Transconductance, Forward 400 mS  ON Semiconductor Transconductance, Forward 400 mS  MOSFET Transistors Transconductance, Forward 400 mS  ON Semiconductor MOSFET Transistors Transconductance, Forward 400 mS   Voltage, Breakdown, Drain to Source 200 V  ON Semiconductor Voltage, Breakdown, Drain to Source 200 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 200 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 200 V   Voltage, Drain to Source 200 V  ON Semiconductor Voltage, Drain to Source 200 V  MOSFET Transistors Voltage, Drain to Source 200 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 200 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.125" <1/8> (3.2mm)  ON Semiconductor Width 0.125" <1/8> (3.2mm)  MOSFET Transistors Width 0.125" <1/8> (3.2mm)  ON Semiconductor MOSFET Transistors Width 0.125" <1/8> (3.2mm)  
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