專(zhuān)業(yè)銷(xiāo)售Amphenol(安費(fèi)諾)全系列產(chǎn)品-英國(guó)2號(hào)倉(cāng)庫(kù)
關(guān)于我們
|
聯(lián)系我們
庫(kù)存查詢(xún)
Amphenol產(chǎn)品選型
按產(chǎn)品分類(lèi)選型
按制造商選型
聯(lián)系我們
美國(guó)1號(hào)分類(lèi)選型
新加坡2號(hào)分類(lèi)選型
英國(guó)10號(hào)分類(lèi)選型
英國(guó)2號(hào)分類(lèi)選型
日本5號(hào)分類(lèi)選型
在本站結(jié)果里搜索:
熱門(mén)搜索詞:
Connectors
8910DPA43V02
Amphenol
UVZSeries 160VDC
70084122
IM21-14-CDTRI
英國(guó)2號(hào)倉(cāng)庫(kù)
>
Semiconductors
>
Discrete Semiconductors
>
Transistors & Modules
>
Bipolar Transistors
>
BC846BLT3G
BC846BLT3G -
ON Semi BC846BLT3G NPN Bipolar Transistor, 0.1 A, 65 V, 3-Pin SOT-23
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
ON Semiconductor
ON Semiconductor
制造商產(chǎn)品編號(hào):
BC846BLT3G
倉(cāng)庫(kù)庫(kù)存編號(hào):
70275385
技術(shù)數(shù)據(jù)表:
Datasheet
訂購(gòu)熱線(xiàn):
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷(xiāo)售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!
BC846BLT3G產(chǎn)品概述
Small Signal NPN Transistors, ON Semiconductor
These ON Semiconductor Bipolar transistors can amplify analog or digital signals. They can also switch DC or function as an oscillator.
BC846BLT3G產(chǎn)品信息
Brand/Series
BC Series
Configuration
Common Base
Current, Collector
100 mA
Current, Gain
90
Dimensions
3.04 x 1.40 x 0.94 mm
Frequency, Operating
100 MHz
Height
0.037" (0.94mm)
Length
0.119" (3.04mm)
Material
Si
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
3
Package Type
SOT-23
Power Dissipation
300 mW
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Transistor Type
NPN
Voltage, Collector to Base
80 V
Voltage, Collector to Emitter
65 V
Voltage, Collector to Emitter, Saturation
0.25 V
Voltage, Emitter to Base
6 V
Voltage, Saturation, Base to Emitter
0.9 V
Width
0.055" (1.4mm)
關(guān)鍵詞
BC846BLT3G相關(guān)搜索
Brand/Series BC Series
ON Semiconductor Brand/Series BC Series
Bipolar Transistors Brand/Series BC Series
ON Semiconductor Bipolar Transistors Brand/Series BC Series
Configuration Common Base
ON Semiconductor Configuration Common Base
Bipolar Transistors Configuration Common Base
ON Semiconductor Bipolar Transistors Configuration Common Base
Current, Collector 100 mA
ON Semiconductor Current, Collector 100 mA
Bipolar Transistors Current, Collector 100 mA
ON Semiconductor Bipolar Transistors Current, Collector 100 mA
Current, Gain 90
ON Semiconductor Current, Gain 90
Bipolar Transistors Current, Gain 90
ON Semiconductor Bipolar Transistors Current, Gain 90
Dimensions 3.04 x 1.40 x 0.94 mm
ON Semiconductor Dimensions 3.04 x 1.40 x 0.94 mm
Bipolar Transistors Dimensions 3.04 x 1.40 x 0.94 mm
ON Semiconductor Bipolar Transistors Dimensions 3.04 x 1.40 x 0.94 mm
Frequency, Operating 100 MHz
ON Semiconductor Frequency, Operating 100 MHz
Bipolar Transistors Frequency, Operating 100 MHz
ON Semiconductor Bipolar Transistors Frequency, Operating 100 MHz
Height 0.037" (0.94mm)
ON Semiconductor Height 0.037" (0.94mm)
Bipolar Transistors Height 0.037" (0.94mm)
ON Semiconductor Bipolar Transistors Height 0.037" (0.94mm)
Length 0.119" (3.04mm)
ON Semiconductor Length 0.119" (3.04mm)
Bipolar Transistors Length 0.119" (3.04mm)
ON Semiconductor Bipolar Transistors Length 0.119" (3.04mm)
Material Si
ON Semiconductor Material Si
Bipolar Transistors Material Si
ON Semiconductor Bipolar Transistors Material Si
Mounting Type Through Hole
ON Semiconductor Mounting Type Through Hole
Bipolar Transistors Mounting Type Through Hole
ON Semiconductor Bipolar Transistors Mounting Type Through Hole
Number of Elements per Chip 1
ON Semiconductor Number of Elements per Chip 1
Bipolar Transistors Number of Elements per Chip 1
ON Semiconductor Bipolar Transistors Number of Elements per Chip 1
Number of Pins 3
ON Semiconductor Number of Pins 3
Bipolar Transistors Number of Pins 3
ON Semiconductor Bipolar Transistors Number of Pins 3
Package Type SOT-23
ON Semiconductor Package Type SOT-23
Bipolar Transistors Package Type SOT-23
ON Semiconductor Bipolar Transistors Package Type SOT-23
Power Dissipation 300 mW
ON Semiconductor Power Dissipation 300 mW
Bipolar Transistors Power Dissipation 300 mW
ON Semiconductor Bipolar Transistors Power Dissipation 300 mW
Temperature, Operating, Maximum +150 °C
ON Semiconductor Temperature, Operating, Maximum +150 °C
Bipolar Transistors Temperature, Operating, Maximum +150 °C
ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
ON Semiconductor Temperature, Operating, Minimum -55 °C
Bipolar Transistors Temperature, Operating, Minimum -55 °C
ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
ON Semiconductor Temperature, Operating, Range -55 to +150 °C
Bipolar Transistors Temperature, Operating, Range -55 to +150 °C
ON Semiconductor Bipolar Transistors Temperature, Operating, Range -55 to +150 °C
Transistor Type NPN
ON Semiconductor Transistor Type NPN
Bipolar Transistors Transistor Type NPN
ON Semiconductor Bipolar Transistors Transistor Type NPN
Voltage, Collector to Base 80 V
ON Semiconductor Voltage, Collector to Base 80 V
Bipolar Transistors Voltage, Collector to Base 80 V
ON Semiconductor Bipolar Transistors Voltage, Collector to Base 80 V
Voltage, Collector to Emitter 65 V
ON Semiconductor Voltage, Collector to Emitter 65 V
Bipolar Transistors Voltage, Collector to Emitter 65 V
ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 65 V
Voltage, Collector to Emitter, Saturation 0.25 V
ON Semiconductor Voltage, Collector to Emitter, Saturation 0.25 V
Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.25 V
ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.25 V
Voltage, Emitter to Base 6 V
ON Semiconductor Voltage, Emitter to Base 6 V
Bipolar Transistors Voltage, Emitter to Base 6 V
ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 6 V
Voltage, Saturation, Base to Emitter 0.9 V
ON Semiconductor Voltage, Saturation, Base to Emitter 0.9 V
Bipolar Transistors Voltage, Saturation, Base to Emitter 0.9 V
ON Semiconductor Bipolar Transistors Voltage, Saturation, Base to Emitter 0.9 V
Width 0.055" (1.4mm)
ON Semiconductor Width 0.055" (1.4mm)
Bipolar Transistors Width 0.055" (1.4mm)
ON Semiconductor Bipolar Transistors Width 0.055" (1.4mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
美國(guó)1號(hào)品牌選型
新加坡2號(hào)品牌選型
英國(guó)2號(hào)品牌選型
英國(guó)10號(hào)品牌選型
日本5號(hào)品牌選型
關(guān)于我們
|
Amphenol簡(jiǎn)介
|
Amphenol產(chǎn)品
|
Amphenol產(chǎn)品應(yīng)用
|
Amphenol動(dòng)態(tài)
|
按系列選型
|
按產(chǎn)品規(guī)格選型
|
Amphenol選型手冊(cè)
|
付款方式
|
聯(lián)系我們
Copyright © 2017
training-know-how.com
All Rights Reserved. 技術(shù)支持:
電子元器件
ICP備案證書(shū)號(hào):
粵ICP備11103613號(hào)