Dual Power Rectifier, 30 A, 0.76 V, TO3P/TO218, +150°C, 200 A
Dual diode construction: pin1 and pin3 may be connected for parallel operation at full range
Guarding for stress protection
Low forward voltage
+150°C operating junction temperature
Guaranteed reverse avalanche The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky barrier principle with a platinum barrier metal.