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NTE2398 - 

POWER MOSFET N-CHANNEL 500V ID=4.5A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MO

NTE Electronics, Inc. NTE2398
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制造商產(chǎn)品編號(hào):
NTE2398
倉庫庫存編號(hào):
70215910
技術(shù)數(shù)據(jù)表:
View NTE2398 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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NTE2398產(chǎn)品概述

N-Channel Enhancement Mode MOSFET, 4.5 Amps, 74 Watts, -55°C to +150°C, M3 Screw Mounting
  • Dynamic dv/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • NTE2398產(chǎn)品信息

      Brand/Series  MOSFET Series  
      Capacitance, Input  610 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  4.5 A  
      Fall Time  16 ns (Typ.)  
      Gate Charge, Total  38 nC  
      Height  0.61" (15.49mm)  
      Length  0.42" (10.67mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  TO-220  
      Polarization  N-Channel  
      Power Dissipation  74 W  
      Resistance, Drain to Source On  1.5 Ω  
      Resistance, Thermal, Junction to Case  1.7 °C⁄W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  62 °C⁄W  
      Time, Turn-Off Delay  42 ns  
      Time, Turn-On Delay  8.2 ns  
      Transconductance, Forward  2.5 S  
      Typical Gate Charge @ Vgs  Maximum of 38 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  500 V  
      Voltage, Drain to Source  500 V  
      Voltage, Forward, Diode  1.6 V  
      Voltage, Gate to Source  ±20 V  
    關(guān)鍵詞         

    NTE2398相關(guān)搜索

    Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 610 pF @ 25 V  NTE Electronics, Inc. Capacitance, Input 610 pF @ 25 V  MOSFET Transistors Capacitance, Input 610 pF @ 25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 610 pF @ 25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 4.5 A  NTE Electronics, Inc. Current, Drain 4.5 A  MOSFET Transistors Current, Drain 4.5 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 4.5 A   Fall Time 16 ns (Typ.)  NTE Electronics, Inc. Fall Time 16 ns (Typ.)  MOSFET Transistors Fall Time 16 ns (Typ.)  NTE Electronics, Inc. MOSFET Transistors Fall Time 16 ns (Typ.)   Gate Charge, Total 38 nC  NTE Electronics, Inc. Gate Charge, Total 38 nC  MOSFET Transistors Gate Charge, Total 38 nC  NTE Electronics, Inc. MOSFET Transistors Gate Charge, Total 38 nC   Height 0.61" (15.49mm)  NTE Electronics, Inc. Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.61" (15.49mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  MOSFET Transistors Package Type TO-220  NTE Electronics, Inc. MOSFET Transistors Package Type TO-220   Polarization N-Channel  NTE Electronics, Inc. Polarization N-Channel  MOSFET Transistors Polarization N-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization N-Channel   Power Dissipation 74 W  NTE Electronics, Inc. Power Dissipation 74 W  MOSFET Transistors Power Dissipation 74 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 74 W   Resistance, Drain to Source On 1.5 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 1.5 Ω  MOSFET Transistors Resistance, Drain to Source On 1.5 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 1.5 Ω   Resistance, Thermal, Junction to Case 1.7 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1.7 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 1.7 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Resistance, Thermal, Junction to Case 1.7 °C⁄W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 62 °C⁄W  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 62 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C⁄W   Time, Turn-Off Delay 42 ns  NTE Electronics, Inc. Time, Turn-Off Delay 42 ns  MOSFET Transistors Time, Turn-Off Delay 42 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 42 ns   Time, Turn-On Delay 8.2 ns  NTE Electronics, Inc. Time, Turn-On Delay 8.2 ns  MOSFET Transistors Time, Turn-On Delay 8.2 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 8.2 ns   Transconductance, Forward 2.5 S  NTE Electronics, Inc. Transconductance, Forward 2.5 S  MOSFET Transistors Transconductance, Forward 2.5 S  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 2.5 S   Typical Gate Charge @ Vgs Maximum of 38 nC @ 10 V  NTE Electronics, Inc. Typical Gate Charge @ Vgs Maximum of 38 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 38 nC @ 10 V  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 38 nC @ 10 V   Voltage, Breakdown, Drain to Source 500 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 500 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 500 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 500 V   Voltage, Drain to Source 500 V  NTE Electronics, Inc. Voltage, Drain to Source 500 V  MOSFET Transistors Voltage, Drain to Source 500 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 500 V   Voltage, Forward, Diode 1.6 V  NTE Electronics, Inc. Voltage, Forward, Diode 1.6 V  MOSFET Transistors Voltage, Forward, Diode 1.6 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 1.6 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V  
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