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NTE2308 - 

TRANSISTOR NPN SILICON 500V IC=12A TO-3P CASE TF=1.0US HIGH VOLTAGE HIGH CURRENT

NTE Electronics, Inc. NTE2308
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制造商產(chǎn)品編號(hào):
NTE2308
倉庫庫存編號(hào):
70215778
技術(shù)數(shù)據(jù)表:
View NTE2308 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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NTE2308產(chǎn)品概述

Silicon NPN Transistors

NTE2308產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  12 A  
  Current, Gain  8  
  Dimensions  15.62 x 4.82 x 20.0 mm  
  Frequency, Operating  20 MHz  
  Gain, DC Current, Minimum  8  
  Height  0.787" (20mm)  
  Length  0.614" (15.62mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-3P  
  Polarity  NPN  
  Power Dissipation  100 W  
  Primary Type  Si  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  NPN  
  Type  High Voltage, Switch  
  Voltage, Breakdown, Collector to Emitter  400 V  
  Voltage, Collector to Base  500 V  
  Voltage, Collector to Emitter  400 V  
  Voltage, Collector to Emitter, Saturation  1 V  
  Voltage, Emitter to Base  7 V  
  Voltage, Saturation, Base to Emitter  1.5 V  
  Voltage, Saturation, Collector to Emitter  1 V (Max.)  
  Voltage, Sustaining, Collector to Emitter  400 V (Min.)  
  Width  0.19" (4.82mm)  
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Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 12 A  NTE Electronics, Inc. Current, Collector 12 A  Bipolar Transistors Current, Collector 12 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 12 A   Current, Gain 8  NTE Electronics, Inc. Current, Gain 8  Bipolar Transistors Current, Gain 8  NTE Electronics, Inc. Bipolar Transistors Current, Gain 8   Dimensions 15.62 x 4.82 x 20.0 mm  NTE Electronics, Inc. Dimensions 15.62 x 4.82 x 20.0 mm  Bipolar Transistors Dimensions 15.62 x 4.82 x 20.0 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 15.62 x 4.82 x 20.0 mm   Frequency, Operating 20 MHz  NTE Electronics, Inc. Frequency, Operating 20 MHz  Bipolar Transistors Frequency, Operating 20 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 20 MHz   Gain, DC Current, Minimum 8  NTE Electronics, Inc. Gain, DC Current, Minimum 8  Bipolar Transistors Gain, DC Current, Minimum 8  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 8   Height 0.787" (20mm)  NTE Electronics, Inc. Height 0.787" (20mm)  Bipolar Transistors Height 0.787" (20mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.787" (20mm)   Length 0.614" (15.62mm)  NTE Electronics, Inc. Length 0.614" (15.62mm)  Bipolar Transistors Length 0.614" (15.62mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.614" (15.62mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3P  NTE Electronics, Inc. Package Type TO-3P  Bipolar Transistors Package Type TO-3P  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3P   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 100 W  NTE Electronics, Inc. Power Dissipation 100 W  Bipolar Transistors Power Dissipation 100 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 100 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type High Voltage, Switch  NTE Electronics, Inc. Type High Voltage, Switch  Bipolar Transistors Type High Voltage, Switch  NTE Electronics, Inc. Bipolar Transistors Type High Voltage, Switch   Voltage, Breakdown, Collector to Emitter 400 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 400 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 400 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 400 V   Voltage, Collector to Base 500 V  NTE Electronics, Inc. Voltage, Collector to Base 500 V  Bipolar Transistors Voltage, Collector to Base 500 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 500 V   Voltage, Collector to Emitter 400 V  NTE Electronics, Inc. Voltage, Collector to Emitter 400 V  Bipolar Transistors Voltage, Collector to Emitter 400 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 400 V   Voltage, Collector to Emitter, Saturation 1 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 1 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V   Voltage, Emitter to Base 7 V  NTE Electronics, Inc. Voltage, Emitter to Base 7 V  Bipolar Transistors Voltage, Emitter to Base 7 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 7 V   Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.5 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V   Voltage, Saturation, Collector to Emitter 1 V (Max.)  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 1 V (Max.)  Bipolar Transistors Voltage, Saturation, Collector to Emitter 1 V (Max.)  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 1 V (Max.)   Voltage, Sustaining, Collector to Emitter 400 V (Min.)  NTE Electronics, Inc. Voltage, Sustaining, Collector to Emitter 400 V (Min.)  Bipolar Transistors Voltage, Sustaining, Collector to Emitter 400 V (Min.)  NTE Electronics, Inc. Bipolar Transistors Voltage, Sustaining, Collector to Emitter 400 V (Min.)   Width 0.19" (4.82mm)  NTE Electronics, Inc. Width 0.19" (4.82mm)  Bipolar Transistors Width 0.19" (4.82mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.19" (4.82mm)  
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