Brand/Series |
Transistor Series |
|
Configuration |
Common Base |
|
Current, Collector |
1 A |
|
Current, Continuous Collector |
1 A |
|
Current, Gain |
25 |
|
Device Dissipation |
20 W |
|
Diameter |
12.3 mm |
|
Dimensions |
12.3 Dia. x 7.5 H mm |
|
Frequency, Operating |
10 MHz |
|
Gain, DC Current, Maximum |
200 |
|
Gain, DC Current, Minimum |
40 |
|
Height |
0.295" (7.5mm) |
|
Material |
Si |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-66 |
|
Polarity |
NPN |
|
Power Dissipation |
20 W |
|
Primary Type |
Si |
|
Resistance, Thermal, Junction to Case |
7.5 °C/W |
|
Temperature Range, Junction, Operating |
-65 to +200 °C |
|
Temperature, Operating, Maximum |
+200 °C |
|
Temperature, Operating, Minimum |
-65 °C |
|
Temperature, Operating, Range |
-65 to +200 °C |
|
Transistor Polarity |
NPN |
|
Transistor Type |
NPN |
|
Type |
High Voltage, Power |
|
Voltage, Breakdown, Collector to Emitter |
300 V |
|
Voltage, Collector to Base |
325 V |
|
Voltage, Collector to Emitter |
300 V |
|
Voltage, Collector to Emitter, Saturation |
2.5 V |
|
Voltage, Emitter to Base |
6 V |
|
關(guān)鍵詞 |