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93C66C-I/P - 

Microchip 93C66C-I/P Serial EEPROM Memory, 4kbit, 200ns, 4.5 to 5.5 V 8-Pin PDIP

Microchip Technology Inc. 93C66C-I/P
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制造商產(chǎn)品編號：
93C66C-I/P
倉庫庫存編號：
70045993
技術(shù)數(shù)據(jù)表：
View 93C66C-I/P Datasheet Datasheet
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由于產(chǎn)品數(shù)據(jù)庫龐大，部分產(chǎn)品信息可能未能及時更新，下單前請與銷售人員確認(rèn)好實時在庫數(shù)量，謝謝合作！

93C66C-I/P產(chǎn)品概述

Features:
  • Automatic ERAL Before WRAL
  • Self-Timed Erase and Write Cycle
  • Power On/Off Data Protection Circuitry
  • Sequential Read Function
  • Industry Standard 3-Wire Serial I/O

    • 93C66C-I/P產(chǎn)品信息

      Capacitance, Input  7 pF  
      Capacitance, Output  7 pF  
      Current, Input, Leakage  ±1 μA  
      Current, Operating  100 μA (Read), 500 μA (Write)  
      Current, Output, Leakage  ±1 μA  
      Data Retention  >200 yrs.  
      Density  4K  
      Interface  3-Wire  
      Memory Type  Serial EEPROM  
      Organization  128×8  
      Package Type  PDIP  
      Supply Voltage  4.5 to 5.5 V  
      Temperature, Operating  -40 to +85 °C  
      Time, Access  200 ns  
      Time, Address Setup  50 ns  
      Voltage, ESD  ≥4 kV  
      Voltage, Input, High Level  5.5 V  
      Voltage, Input, Low Level  0.8 V  
      Voltage, Output, High Level  2.4 V  
      Voltage, Output, Low Level  0.4 V  
    關(guān)鍵詞         

    93C66C-I/P相關(guān)搜索

    Capacitance, Input 7 pF  Microchip Technology Inc. Capacitance, Input 7 pF  EEPROM Memory Chips Capacitance, Input 7 pF  Microchip Technology Inc. EEPROM Memory Chips Capacitance, Input 7 pF   Capacitance, Output 7 pF  Microchip Technology Inc. Capacitance, Output 7 pF  EEPROM Memory Chips Capacitance, Output 7 pF  Microchip Technology Inc. EEPROM Memory Chips Capacitance, Output 7 pF   Current, Input, Leakage ±1 μA  Microchip Technology Inc. Current, Input, Leakage ±1 μA  EEPROM Memory Chips Current, Input, Leakage ±1 μA  Microchip Technology Inc. EEPROM Memory Chips Current, Input, Leakage ±1 μA   Current, Operating 100 μA (Read), 500 μA (Write)  Microchip Technology Inc. Current, Operating 100 μA (Read), 500 μA (Write)  EEPROM Memory Chips Current, Operating 100 μA (Read), 500 μA (Write)  Microchip Technology Inc. EEPROM Memory Chips Current, Operating 100 μA (Read), 500 μA (Write)   Current, Output, Leakage ±1 μA  Microchip Technology Inc. Current, Output, Leakage ±1 μA  EEPROM Memory Chips Current, Output, Leakage ±1 μA  Microchip Technology Inc. EEPROM Memory Chips Current, Output, Leakage ±1 μA   Data Retention >200 yrs.  Microchip Technology Inc. Data Retention >200 yrs.  EEPROM Memory Chips Data Retention >200 yrs.  Microchip Technology Inc. EEPROM Memory Chips Data Retention >200 yrs.   Density 4K  Microchip Technology Inc. Density 4K  EEPROM Memory Chips Density 4K  Microchip Technology Inc. EEPROM Memory Chips Density 4K   Interface 3-Wire  Microchip Technology Inc. Interface 3-Wire  EEPROM Memory Chips Interface 3-Wire  Microchip Technology Inc. EEPROM Memory Chips Interface 3-Wire   Memory Type Serial EEPROM  Microchip Technology Inc. Memory Type Serial EEPROM  EEPROM Memory Chips Memory Type Serial EEPROM  Microchip Technology Inc. EEPROM Memory Chips Memory Type Serial EEPROM   Organization 128×8  Microchip Technology Inc. Organization 128×8  EEPROM Memory Chips Organization 128×8  Microchip Technology Inc. EEPROM Memory Chips Organization 128×8   Package Type PDIP  Microchip Technology Inc. Package Type PDIP  EEPROM Memory Chips Package Type PDIP  Microchip Technology Inc. EEPROM Memory Chips Package Type PDIP   Supply Voltage 4.5 to 5.5 V  Microchip Technology Inc. Supply Voltage 4.5 to 5.5 V  EEPROM Memory Chips Supply Voltage 4.5 to 5.5 V  Microchip Technology Inc. EEPROM Memory Chips Supply Voltage 4.5 to 5.5 V   Temperature, Operating -40 to +85 °C  Microchip Technology Inc. Temperature, Operating -40 to +85 °C  EEPROM Memory Chips Temperature, Operating -40 to +85 °C  Microchip Technology Inc. EEPROM Memory Chips Temperature, Operating -40 to +85 °C   Time, Access 200 ns  Microchip Technology Inc. Time, Access 200 ns  EEPROM Memory Chips Time, Access 200 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Access 200 ns   Time, Address Setup 50 ns  Microchip Technology Inc. Time, Address Setup 50 ns  EEPROM Memory Chips Time, Address Setup 50 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Address Setup 50 ns   Voltage, ESD ≥4 kV  Microchip Technology Inc. Voltage, ESD ≥4 kV  EEPROM Memory Chips Voltage, ESD ≥4 kV  Microchip Technology Inc. EEPROM Memory Chips Voltage, ESD ≥4 kV   Voltage, Input, High Level 5.5 V  Microchip Technology Inc. Voltage, Input, High Level 5.5 V  EEPROM Memory Chips Voltage, Input, High Level 5.5 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Input, High Level 5.5 V   Voltage, Input, Low Level 0.8 V  Microchip Technology Inc. Voltage, Input, Low Level 0.8 V  EEPROM Memory Chips Voltage, Input, Low Level 0.8 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Input, Low Level 0.8 V   Voltage, Output, High Level 2.4 V  Microchip Technology Inc. Voltage, Output, High Level 2.4 V  EEPROM Memory Chips Voltage, Output, High Level 2.4 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Output, High Level 2.4 V   Voltage, Output, Low Level 0.4 V  Microchip Technology Inc. Voltage, Output, Low Level 0.4 V  EEPROM Memory Chips Voltage, Output, Low Level 0.4 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Output, Low Level 0.4 V  
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