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24AA16-I/MS - 

16K, 2K X 8 1.8V SERIAL EE, IND

Microchip Technology Inc. 24AA16-I/MS
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制造商產(chǎn)品編號(hào)：
24AA16-I/MS
倉庫庫存編號(hào)：
70045820
技術(shù)數(shù)據(jù)表：
View 24AA16-I/MS Datasheet Datasheet
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24AA16-I/MS產(chǎn)品概述



Features:
  • Self-Timed Write Cycle and Page Write Mode
  • Power On/Off Data Protection Circuitry
  • Sequential Read Function

    • 24AA16-I/MS產(chǎn)品信息

      Brand/Series  24AA16 Series  
      Capacitance, Input  10 pF  
      Capacitance, Output  10 pF  
      Current, Input, Leakage  ±1 μA  
      Current, Operating  0.01 mA (Read), 3 mA (Write)  
      Current, Output, Leakage  ±1 μA  
      Data Retention  >200 yrs.  
      Density  16K  
      Interface  2-Wire  
      Memory Type  Serial EEPROM  
      Organization  256×8  
      Package Type  MSOP  
      Supply Voltage  1.7 to 5.5 V  
      Temperature, Operating  -40 to +85 °C  
      Time, Access  900 ns  
      Time, Fall  300 ns  
      Time, Rise  1000 ns  
      Voltage, ESD  ≥4 kV  
      Voltage, Input, High Level  1.19 V  
      Voltage, Input, Low Level  0.51 V  
      Voltage, Output, Low Level  0.4 V  
    關(guān)鍵詞         

    24AA16-I/MS相關(guān)搜索

    Brand/Series 24AA16 Series  Microchip Technology Inc. Brand/Series 24AA16 Series  EEPROM Memory Chips Brand/Series 24AA16 Series  Microchip Technology Inc. EEPROM Memory Chips Brand/Series 24AA16 Series   Capacitance, Input 10 pF  Microchip Technology Inc. Capacitance, Input 10 pF  EEPROM Memory Chips Capacitance, Input 10 pF  Microchip Technology Inc. EEPROM Memory Chips Capacitance, Input 10 pF   Capacitance, Output 10 pF  Microchip Technology Inc. Capacitance, Output 10 pF  EEPROM Memory Chips Capacitance, Output 10 pF  Microchip Technology Inc. EEPROM Memory Chips Capacitance, Output 10 pF   Current, Input, Leakage ±1 μA  Microchip Technology Inc. Current, Input, Leakage ±1 μA  EEPROM Memory Chips Current, Input, Leakage ±1 μA  Microchip Technology Inc. EEPROM Memory Chips Current, Input, Leakage ±1 μA   Current, Operating 0.01 mA (Read), 3 mA (Write)  Microchip Technology Inc. Current, Operating 0.01 mA (Read), 3 mA (Write)  EEPROM Memory Chips Current, Operating 0.01 mA (Read), 3 mA (Write)  Microchip Technology Inc. EEPROM Memory Chips Current, Operating 0.01 mA (Read), 3 mA (Write)   Current, Output, Leakage ±1 μA  Microchip Technology Inc. Current, Output, Leakage ±1 μA  EEPROM Memory Chips Current, Output, Leakage ±1 μA  Microchip Technology Inc. EEPROM Memory Chips Current, Output, Leakage ±1 μA   Data Retention >200 yrs.  Microchip Technology Inc. Data Retention >200 yrs.  EEPROM Memory Chips Data Retention >200 yrs.  Microchip Technology Inc. EEPROM Memory Chips Data Retention >200 yrs.   Density 16K  Microchip Technology Inc. Density 16K  EEPROM Memory Chips Density 16K  Microchip Technology Inc. EEPROM Memory Chips Density 16K   Interface 2-Wire  Microchip Technology Inc. Interface 2-Wire  EEPROM Memory Chips Interface 2-Wire  Microchip Technology Inc. EEPROM Memory Chips Interface 2-Wire   Memory Type Serial EEPROM  Microchip Technology Inc. Memory Type Serial EEPROM  EEPROM Memory Chips Memory Type Serial EEPROM  Microchip Technology Inc. EEPROM Memory Chips Memory Type Serial EEPROM   Organization 256×8  Microchip Technology Inc. Organization 256×8  EEPROM Memory Chips Organization 256×8  Microchip Technology Inc. EEPROM Memory Chips Organization 256×8   Package Type MSOP  Microchip Technology Inc. Package Type MSOP  EEPROM Memory Chips Package Type MSOP  Microchip Technology Inc. EEPROM Memory Chips Package Type MSOP   Supply Voltage 1.7 to 5.5 V  Microchip Technology Inc. Supply Voltage 1.7 to 5.5 V  EEPROM Memory Chips Supply Voltage 1.7 to 5.5 V  Microchip Technology Inc. EEPROM Memory Chips Supply Voltage 1.7 to 5.5 V   Temperature, Operating -40 to +85 °C  Microchip Technology Inc. Temperature, Operating -40 to +85 °C  EEPROM Memory Chips Temperature, Operating -40 to +85 °C  Microchip Technology Inc. EEPROM Memory Chips Temperature, Operating -40 to +85 °C   Time, Access 900 ns  Microchip Technology Inc. Time, Access 900 ns  EEPROM Memory Chips Time, Access 900 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Access 900 ns   Time, Fall 300 ns  Microchip Technology Inc. Time, Fall 300 ns  EEPROM Memory Chips Time, Fall 300 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Fall 300 ns   Time, Rise 1000 ns  Microchip Technology Inc. Time, Rise 1000 ns  EEPROM Memory Chips Time, Rise 1000 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Rise 1000 ns   Voltage, ESD ≥4 kV  Microchip Technology Inc. Voltage, ESD ≥4 kV  EEPROM Memory Chips Voltage, ESD ≥4 kV  Microchip Technology Inc. EEPROM Memory Chips Voltage, ESD ≥4 kV   Voltage, Input, High Level 1.19 V  Microchip Technology Inc. Voltage, Input, High Level 1.19 V  EEPROM Memory Chips Voltage, Input, High Level 1.19 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Input, High Level 1.19 V   Voltage, Input, Low Level 0.51 V  Microchip Technology Inc. Voltage, Input, Low Level 0.51 V  EEPROM Memory Chips Voltage, Input, Low Level 0.51 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Input, Low Level 0.51 V   Voltage, Output, Low Level 0.4 V  Microchip Technology Inc. Voltage, Output, Low Level 0.4 V  EEPROM Memory Chips Voltage, Output, Low Level 0.4 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Output, Low Level 0.4 V  
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