<menu id="vyqgg"></menu>

專業(yè)銷售Amphenol（安費諾）全系列產(chǎn)品-英國2號倉庫

關(guān)于我們 | 聯(lián)系我們

美國1號分類選型新加坡2號分類選型英國10號分類選型英國2號分類選型日本5號分類選型

英國2號倉庫

Discrete Semiconductors

Transistors & Modules

MOSFET Transistors

> IRLR3410PBF

IRLR3410PBF -

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ohm; ID 17A; D-Pak (TO-252AA); PD 79W

International Rectifier IRLR3410PBF

聲明：圖片僅供參考，請以實物為準(zhǔn)！

International Rectifier

制造商：: International Rectifier International Rectifier
制造商產(chǎn)品編號：: IRLR3410PBF
倉庫庫存編號：: 70017457
技術(shù)數(shù)據(jù)表：: Datasheet

訂購熱線： 400-900-3095 0755-21000796, QQ:800152669, Email:sales@szcwdz.com

由于產(chǎn)品數(shù)據(jù)庫龐大，部分產(chǎn)品信息可能未能及時更新，下單前請與銷售人員確認(rèn)好實時在庫數(shù)量，謝謝合作！

IRLR3410PBF產(chǎn)品概述

N-Channel Power MOSFET 13A to 19A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

IRLR3410PBF相關(guān)搜索

Brand/Series HEXFET Series International Rectifier Brand/Series HEXFET Series MOSFET Transistors Brand/Series HEXFET Series International Rectifier MOSFET Transistors Brand/Series HEXFET Series Capacitance, Input 800 pF @ 25 V International Rectifier Capacitance, Input 800 pF @ 25 V MOSFET Transistors Capacitance, Input 800 pF @ 25 V International Rectifier MOSFET Transistors Capacitance, Input 800 pF @ 25 V Channel Mode Enhancement International Rectifier Channel Mode Enhancement MOSFET Transistors Channel Mode Enhancement International Rectifier MOSFET Transistors Channel Mode Enhancement Channel Type N International Rectifier Channel Type N MOSFET Transistors Channel Type N International Rectifier MOSFET Transistors Channel Type N Configuration Dual Drain International Rectifier Configuration Dual Drain MOSFET Transistors Configuration Dual Drain International Rectifier MOSFET Transistors Configuration Dual Drain Current, Drain 17 A International Rectifier Current, Drain 17 A MOSFET Transistors Current, Drain 17 A International Rectifier MOSFET Transistors Current, Drain 17 A Dimensions 6.73 x 6.22 x 2.39 mm International Rectifier Dimensions 6.73 x 6.22 x 2.39 mm MOSFET Transistors Dimensions 6.73 x 6.22 x 2.39 mm International Rectifier MOSFET Transistors Dimensions 6.73 x 6.22 x 2.39 mm Gate Charge, Total 34 nC International Rectifier Gate Charge, Total 34 nC MOSFET Transistors Gate Charge, Total 34 nC International Rectifier MOSFET Transistors Gate Charge, Total 34 nC Height 0.094" (2.39mm) International Rectifier Height 0.094" (2.39mm) MOSFET Transistors Height 0.094" (2.39mm) International Rectifier MOSFET Transistors Height 0.094" (2.39mm) Length 0.264" (6.73mm) International Rectifier Length 0.264" (6.73mm) MOSFET Transistors Length 0.264" (6.73mm) International Rectifier MOSFET Transistors Length 0.264" (6.73mm) Mounting Type Surface Mount International Rectifier Mounting Type Surface Mount MOSFET Transistors Mounting Type Surface Mount International Rectifier MOSFET Transistors Mounting Type Surface Mount Number of Elements per Chip 1 International Rectifier Number of Elements per Chip 1 MOSFET Transistors Number of Elements per Chip 1 International Rectifier MOSFET Transistors Number of Elements per Chip 1 Number of Pins 3 International Rectifier Number of Pins 3 MOSFET Transistors Number of Pins 3 International Rectifier MOSFET Transistors Number of Pins 3 Package Type DPAK International Rectifier Package Type DPAK MOSFET Transistors Package Type DPAK International Rectifier MOSFET Transistors Package Type DPAK Polarization N-Channel International Rectifier Polarization N-Channel MOSFET Transistors Polarization N-Channel International Rectifier MOSFET Transistors Polarization N-Channel Power Dissipation 79 W International Rectifier Power Dissipation 79 W MOSFET Transistors Power Dissipation 79 W International Rectifier MOSFET Transistors Power Dissipation 79 W Resistance, Drain to Source On 0.155 Ω International Rectifier Resistance, Drain to Source On 0.155 Ω MOSFET Transistors Resistance, Drain to Source On 0.155 Ω International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.155 Ω Temperature, Operating, Maximum +175 °C International Rectifier Temperature, Operating, Maximum +175 °C MOSFET Transistors Temperature, Operating, Maximum +175 °C International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C Temperature, Operating, Minimum -55 °C International Rectifier Temperature, Operating, Minimum -55 °C MOSFET Transistors Temperature, Operating, Minimum -55 °C International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C Temperature, Operating, Range -55 to +175 °C International Rectifier Temperature, Operating, Range -55 to +175 °C MOSFET Transistors Temperature, Operating, Range -55 to +175 °C International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C Time, Turn-Off Delay 30 ns International Rectifier Time, Turn-Off Delay 30 ns MOSFET Transistors Time, Turn-Off Delay 30 ns International Rectifier MOSFET Transistors Time, Turn-Off Delay 30 ns Time, Turn-On Delay 7.2 ns International Rectifier Time, Turn-On Delay 7.2 ns MOSFET Transistors Time, Turn-On Delay 7.2 ns International Rectifier MOSFET Transistors Time, Turn-On Delay 7.2 ns Transconductance, Forward 7.7 S International Rectifier Transconductance, Forward 7.7 S MOSFET Transistors Transconductance, Forward 7.7 S International Rectifier MOSFET Transistors Transconductance, Forward 7.7 S Typical Gate Charge @ Vgs Maximum of 34 nC @ 5 V International Rectifier Typical Gate Charge @ Vgs Maximum of 34 nC @ 5 V MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 34 nC @ 5 V International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 34 nC @ 5 V Voltage, Breakdown, Drain to Source 100 V International Rectifier Voltage, Breakdown, Drain to Source 100 V MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V Voltage, Drain to Source 100 V International Rectifier Voltage, Drain to Source 100 V MOSFET Transistors Voltage, Drain to Source 100 V International Rectifier MOSFET Transistors Voltage, Drain to Source 100 V Voltage, Forward, Diode 1.3 V International Rectifier Voltage, Forward, Diode 1.3 V MOSFET Transistors Voltage, Forward, Diode 1.3 V International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V Voltage, Gate to Source ±16 V International Rectifier Voltage, Gate to Source ±16 V MOSFET Transistors Voltage, Gate to Source ±16 V International Rectifier MOSFET Transistors Voltage, Gate to Source ±16 V Width 0.245" (6.22mm) International Rectifier Width 0.245" (6.22mm) MOSFET Transistors Width 0.245" (6.22mm) International Rectifier MOSFET Transistors Width 0.245" (6.22mm)

郵箱：sales@szcwdz.com
Q Q：800152669
手機網(wǎng)站：m.szcwdz.com

美國1號品牌選型新加坡2號品牌選型

英國2號品牌選型英國10號品牌選型

日本5號品牌選型

關(guān)于我們 | Amphenol簡介 | Amphenol產(chǎn)品 | Amphenol產(chǎn)品應(yīng)用 | Amphenol動態(tài) | 按系列選型 | 按產(chǎn)品規(guī)格選型 | Amphenol選型手冊 | 付款方式 | 聯(lián)系我們

Copyright © 2017 training-know-how.com All Rights Reserved. 技術(shù)支持：電子元器件 ICP備案證書號:粵ICP備11103613號

<div id="so18v"></div>