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IRLR024NTRPBF
IRLR024NTRPBF -
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ohm; ID 17A; D-Pak (TO-252AA); PD 45W
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號(hào):
IRLR024NTRPBF
倉庫庫存編號(hào):
70017456
技術(shù)數(shù)據(jù)表:
Datasheet
訂購熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量,謝謝合作!
IRLR024NTRPBF產(chǎn)品概述
HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRLR024NTRPBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
480 pF @ 25 V
Channel Mode
Enhancement
Channel Type
N
Configuration
Dual Drain
Current, Drain
17 A
Dimensions
6.73 x 6.22 x 2.39 mm
Gate Charge, Total
15 nC
Height
0.094" (2.39mm)
Length
0.264" (6.73mm)
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
DPAK
Polarization
N-Channel
Power Dissipation
45 W
Resistance, Drain to Source On
0.11 Ω
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +175 °C
Time, Turn-Off Delay
20 ns
Time, Turn-On Delay
7.1 ns
Transconductance, Forward
8.3 S
Typical Gate Charge @ Vgs
Maximum of 15 nC @ 5 V
Voltage, Breakdown, Drain to Source
55 V
Voltage, Drain to Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate to Source
±16 V
Width
0.245" (6.22mm)
關(guān)鍵詞
IRLR024NTRPBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 480 pF @ 25 V
International Rectifier Capacitance, Input 480 pF @ 25 V
MOSFET Transistors Capacitance, Input 480 pF @ 25 V
International Rectifier MOSFET Transistors Capacitance, Input 480 pF @ 25 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Dual Drain
International Rectifier Configuration Dual Drain
MOSFET Transistors Configuration Dual Drain
International Rectifier MOSFET Transistors Configuration Dual Drain
Current, Drain 17 A
International Rectifier Current, Drain 17 A
MOSFET Transistors Current, Drain 17 A
International Rectifier MOSFET Transistors Current, Drain 17 A
Dimensions 6.73 x 6.22 x 2.39 mm
International Rectifier Dimensions 6.73 x 6.22 x 2.39 mm
MOSFET Transistors Dimensions 6.73 x 6.22 x 2.39 mm
International Rectifier MOSFET Transistors Dimensions 6.73 x 6.22 x 2.39 mm
Gate Charge, Total 15 nC
International Rectifier Gate Charge, Total 15 nC
MOSFET Transistors Gate Charge, Total 15 nC
International Rectifier MOSFET Transistors Gate Charge, Total 15 nC
Height 0.094" (2.39mm)
International Rectifier Height 0.094" (2.39mm)
MOSFET Transistors Height 0.094" (2.39mm)
International Rectifier MOSFET Transistors Height 0.094" (2.39mm)
Length 0.264" (6.73mm)
International Rectifier Length 0.264" (6.73mm)
MOSFET Transistors Length 0.264" (6.73mm)
International Rectifier MOSFET Transistors Length 0.264" (6.73mm)
Mounting Type Surface Mount
International Rectifier Mounting Type Surface Mount
MOSFET Transistors Mounting Type Surface Mount
International Rectifier MOSFET Transistors Mounting Type Surface Mount
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 3
International Rectifier Number of Pins 3
MOSFET Transistors Number of Pins 3
International Rectifier MOSFET Transistors Number of Pins 3
Package Type DPAK
International Rectifier Package Type DPAK
MOSFET Transistors Package Type DPAK
International Rectifier MOSFET Transistors Package Type DPAK
Polarization N-Channel
International Rectifier Polarization N-Channel
MOSFET Transistors Polarization N-Channel
International Rectifier MOSFET Transistors Polarization N-Channel
Power Dissipation 45 W
International Rectifier Power Dissipation 45 W
MOSFET Transistors Power Dissipation 45 W
International Rectifier MOSFET Transistors Power Dissipation 45 W
Resistance, Drain to Source On 0.11 Ω
International Rectifier Resistance, Drain to Source On 0.11 Ω
MOSFET Transistors Resistance, Drain to Source On 0.11 Ω
International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.11 Ω
Temperature, Operating, Maximum +175 °C
International Rectifier Temperature, Operating, Maximum +175 °C
MOSFET Transistors Temperature, Operating, Maximum +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +175 °C
International Rectifier Temperature, Operating, Range -55 to +175 °C
MOSFET Transistors Temperature, Operating, Range -55 to +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C
Time, Turn-Off Delay 20 ns
International Rectifier Time, Turn-Off Delay 20 ns
MOSFET Transistors Time, Turn-Off Delay 20 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 20 ns
Time, Turn-On Delay 7.1 ns
International Rectifier Time, Turn-On Delay 7.1 ns
MOSFET Transistors Time, Turn-On Delay 7.1 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 7.1 ns
Transconductance, Forward 8.3 S
International Rectifier Transconductance, Forward 8.3 S
MOSFET Transistors Transconductance, Forward 8.3 S
International Rectifier MOSFET Transistors Transconductance, Forward 8.3 S
Typical Gate Charge @ Vgs Maximum of 15 nC @ 5 V
International Rectifier Typical Gate Charge @ Vgs Maximum of 15 nC @ 5 V
MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 15 nC @ 5 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 15 nC @ 5 V
Voltage, Breakdown, Drain to Source 55 V
International Rectifier Voltage, Breakdown, Drain to Source 55 V
MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V
Voltage, Drain to Source 55 V
International Rectifier Voltage, Drain to Source 55 V
MOSFET Transistors Voltage, Drain to Source 55 V
International Rectifier MOSFET Transistors Voltage, Drain to Source 55 V
Voltage, Forward, Diode 1.3 V
International Rectifier Voltage, Forward, Diode 1.3 V
MOSFET Transistors Voltage, Forward, Diode 1.3 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V
Voltage, Gate to Source ±16 V
International Rectifier Voltage, Gate to Source ±16 V
MOSFET Transistors Voltage, Gate to Source ±16 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±16 V
Width 0.245" (6.22mm)
International Rectifier Width 0.245" (6.22mm)
MOSFET Transistors Width 0.245" (6.22mm)
International Rectifier MOSFET Transistors Width 0.245" (6.22mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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