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IRG4PH50UDPBF - 

IRG4PH50UDPBF, IGBT Transistor, 45 A 1200 V, 3-Pin TO-247AC

International Rectifier IRG4PH50UDPBF
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制造商產(chǎn)品編號(hào)：
IRG4PH50UDPBF
倉(cāng)庫(kù)庫(kù)存編號(hào)：
70017515
技術(shù)數(shù)據(jù)表：
View IRG4PH50UDPBF Datasheet Datasheet
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IRG4PH50UDPBF產(chǎn)品概述

Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IRG4PH50UDPBF產(chǎn)品信息

  Capacitance, Gate  3600 pF  
  Channel Type  N  
  Configuration  Single  
  Current, Collector  45 A  
  Current, Continuous Collector  45 A  
  Dimensions  15.87 X 5.31 X 20.70 mm  
  Energy Rating  3.6 mJ  
  Height  0.815" (20.7mm)  
  Length  0.625" <5/8> (15.875mm)  
  Mounting Type  Through Hole  
  Number of Pins  3  
  Package Type  TO-247AC  
  Polarity  N-Channel  
  Power Dissipation  200 W  
  Resistance, Thermal, Junction to Case  0.64 °C/W  
  Speed, Switching  40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  NPN  
  Type  Ultrafast  
  Voltage, Collector to Emitter  1200 V  
  Voltage, Collector to Emitter Shorted  1200 V  
  Voltage, Gate to Emitter  ±20 V  
  Width  0.209" (5.31mm)  
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IRG4PH50UDPBF相關(guān)搜索

Capacitance, Gate 3600 pF  International Rectifier Capacitance, Gate 3600 pF  IGBT Transistors Capacitance, Gate 3600 pF  International Rectifier IGBT Transistors Capacitance, Gate 3600 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  IGBT Transistors Configuration Single  International Rectifier IGBT Transistors Configuration Single   Current, Collector 45 A  International Rectifier Current, Collector 45 A  IGBT Transistors Current, Collector 45 A  International Rectifier IGBT Transistors Current, Collector 45 A   Current, Continuous Collector 45 A  International Rectifier Current, Continuous Collector 45 A  IGBT Transistors Current, Continuous Collector 45 A  International Rectifier IGBT Transistors Current, Continuous Collector 45 A   Dimensions 15.87 X 5.31 X 20.70 mm  International Rectifier Dimensions 15.87 X 5.31 X 20.70 mm  IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm  International Rectifier IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm   Energy Rating 3.6 mJ  International Rectifier Energy Rating 3.6 mJ  IGBT Transistors Energy Rating 3.6 mJ  International Rectifier IGBT Transistors Energy Rating 3.6 mJ   Height 0.815" (20.7mm)  International Rectifier Height 0.815" (20.7mm)  IGBT Transistors Height 0.815" (20.7mm)  International Rectifier IGBT Transistors Height 0.815" (20.7mm)   Length 0.625" <5/8> (15.875mm)  International Rectifier Length 0.625" <5/8> (15.875mm)  IGBT Transistors Length 0.625" <5/8> (15.875mm)  International Rectifier IGBT Transistors Length 0.625" <5/8> (15.875mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type TO-247AC  International Rectifier Package Type TO-247AC  IGBT Transistors Package Type TO-247AC  International Rectifier IGBT Transistors Package Type TO-247AC   Polarity N-Channel  International Rectifier Polarity N-Channel  IGBT Transistors Polarity N-Channel  International Rectifier IGBT Transistors Polarity N-Channel   Power Dissipation 200 W  International Rectifier Power Dissipation 200 W  IGBT Transistors Power Dissipation 200 W  International Rectifier IGBT Transistors Power Dissipation 200 W   Resistance, Thermal, Junction to Case 0.64 °C/W  International Rectifier Resistance, Thermal, Junction to Case 0.64 °C/W  IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W  International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W   Speed, Switching 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz  International Rectifier Speed, Switching 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz  IGBT Transistors Speed, Switching 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz  International Rectifier IGBT Transistors Speed, Switching 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  IGBT Transistors Temperature, Operating, Maximum +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  IGBT Transistors Temperature, Operating, Minimum -55 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  IGBT Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  International Rectifier Transistor Type NPN  IGBT Transistors Transistor Type NPN  International Rectifier IGBT Transistors Transistor Type NPN   Type Ultrafast  International Rectifier Type Ultrafast  IGBT Transistors Type Ultrafast  International Rectifier IGBT Transistors Type Ultrafast   Voltage, Collector to Emitter 1200 V  International Rectifier Voltage, Collector to Emitter 1200 V  IGBT Transistors Voltage, Collector to Emitter 1200 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  International Rectifier Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistors Voltage, Collector to Emitter Shorted 1200 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate to Emitter ±20 V  International Rectifier Voltage, Gate to Emitter ±20 V  IGBT Transistors Voltage, Gate to Emitter ±20 V  International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V   Width 0.209" (5.31mm)  International Rectifier Width 0.209" (5.31mm)  IGBT Transistors Width 0.209" (5.31mm)  International Rectifier IGBT Transistors Width 0.209" (5.31mm)  
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