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IRG4PC50WPBF
IRG4PC50WPBF -
600V WARP 60-150 KHZ DISCRETE IGBT; TO-247AC PACKAGE
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號(hào):
IRG4PC50WPBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70017498
技術(shù)數(shù)據(jù)表:
Datasheet
訂購(gòu)熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!
IRG4PC50WPBF產(chǎn)品概述
Single IGBT over 21A, Infineon
optimized IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. utilizing FRED diodes optimized to provide the best performance with IGBT's
IRG4PC50WPBF產(chǎn)品信息
Capacitance, Gate
3700 pF
Channel Type
N
Configuration
Dual
Current, Collector
55 A
Current, Continuous Collector
55 A
Dimensions
15.90 x 5.30 x 20.30 mm
Energy Rating
170 mJ
Height
0.799" (20.3mm)
Length
0.625" <5/8> (15.875mm)
Mounting Type
Through Hole
Number of Pins
3
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
200 W
Resistance, Thermal, Junction to Case
0.64 °C/W
Speed, Switching
150 kHz
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Transistor Type
NPN
Type
Warp
Voltage, Collector to Emitter
2.3 V
Voltage, Collector to Emitter Shorted
600 V
Voltage, Gate to Emitter
±20 V
Width
0.209" (5.3mm)
關(guān)鍵詞
IRG4PC50WPBF客戶還搜索了
參考圖片
制造商 / 說(shuō)明 / 型號(hào) / 倉(cāng)庫(kù)庫(kù)存編號(hào)
PDF
操作
HVCA
Bridge Rectifier; 50V; 150A; 35V; 6A
型號(hào):
KBPC6005
倉(cāng)庫(kù)庫(kù)存編號(hào):
70016008
搜索
OKW Enclosures
Enclosure; Sloped; Desktop; ABS, UL94HB; Black; 5.906x4.724x2.472In; ComtecSeries
型號(hào):
A0612109-AL
倉(cāng)庫(kù)庫(kù)存編號(hào):
70016684
搜索
Vishay / Small Signal & Opto Products (SSP)
Diode, Zener; 15 V @ 17 mA; 1 W @ +50C (Ambient); DO-41; 14 Ohms @ 17 mA; 100
型號(hào):
1N4744A-TR
倉(cāng)庫(kù)庫(kù)存編號(hào):
70061618
搜索
Vishay / Small Signal & Opto Products (SSP)
Diode, Zener; 18 V @ 14 mA; 1 W @ +50C (Ambient); DO-41; 20 Ohms @ 14 mA; 100
型號(hào):
1N4746A-TR
倉(cāng)庫(kù)庫(kù)存編號(hào):
70061620
搜索
Vishay PCS
MOSFET, Power; N-Ch; VDSS 400V; RDS(ON) 0.55Ohm; ID 10A; TO-220AB; PD 125W; VGS +/-20V
型號(hào):
IRF740PBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70078860
搜索
Schurter
Fuse; Subminiature; Quick-Acting; 1A; 125VAC/VDC; 6.4x8.8mm; 2-Pin, Short; PCB Mnt
型號(hào):
0034.4221
倉(cāng)庫(kù)庫(kù)存編號(hào):
70160011
搜索
IRG4PC50WPBF相關(guān)搜索
Capacitance, Gate 3700 pF
International Rectifier Capacitance, Gate 3700 pF
IGBT Transistors Capacitance, Gate 3700 pF
International Rectifier IGBT Transistors Capacitance, Gate 3700 pF
Channel Type N
International Rectifier Channel Type N
IGBT Transistors Channel Type N
International Rectifier IGBT Transistors Channel Type N
Configuration Dual
International Rectifier Configuration Dual
IGBT Transistors Configuration Dual
International Rectifier IGBT Transistors Configuration Dual
Current, Collector 55 A
International Rectifier Current, Collector 55 A
IGBT Transistors Current, Collector 55 A
International Rectifier IGBT Transistors Current, Collector 55 A
Current, Continuous Collector 55 A
International Rectifier Current, Continuous Collector 55 A
IGBT Transistors Current, Continuous Collector 55 A
International Rectifier IGBT Transistors Current, Continuous Collector 55 A
Dimensions 15.90 x 5.30 x 20.30 mm
International Rectifier Dimensions 15.90 x 5.30 x 20.30 mm
IGBT Transistors Dimensions 15.90 x 5.30 x 20.30 mm
International Rectifier IGBT Transistors Dimensions 15.90 x 5.30 x 20.30 mm
Energy Rating 170 mJ
International Rectifier Energy Rating 170 mJ
IGBT Transistors Energy Rating 170 mJ
International Rectifier IGBT Transistors Energy Rating 170 mJ
Height 0.799" (20.3mm)
International Rectifier Height 0.799" (20.3mm)
IGBT Transistors Height 0.799" (20.3mm)
International Rectifier IGBT Transistors Height 0.799" (20.3mm)
Length 0.625" <5/8> (15.875mm)
International Rectifier Length 0.625" <5/8> (15.875mm)
IGBT Transistors Length 0.625" <5/8> (15.875mm)
International Rectifier IGBT Transistors Length 0.625" <5/8> (15.875mm)
Mounting Type Through Hole
International Rectifier Mounting Type Through Hole
IGBT Transistors Mounting Type Through Hole
International Rectifier IGBT Transistors Mounting Type Through Hole
Number of Pins 3
International Rectifier Number of Pins 3
IGBT Transistors Number of Pins 3
International Rectifier IGBT Transistors Number of Pins 3
Package Type TO-247AC
International Rectifier Package Type TO-247AC
IGBT Transistors Package Type TO-247AC
International Rectifier IGBT Transistors Package Type TO-247AC
Polarity N-Channel
International Rectifier Polarity N-Channel
IGBT Transistors Polarity N-Channel
International Rectifier IGBT Transistors Polarity N-Channel
Power Dissipation 200 W
International Rectifier Power Dissipation 200 W
IGBT Transistors Power Dissipation 200 W
International Rectifier IGBT Transistors Power Dissipation 200 W
Resistance, Thermal, Junction to Case 0.64 °C/W
International Rectifier Resistance, Thermal, Junction to Case 0.64 °C/W
IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W
International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W
Speed, Switching 150 kHz
International Rectifier Speed, Switching 150 kHz
IGBT Transistors Speed, Switching 150 kHz
International Rectifier IGBT Transistors Speed, Switching 150 kHz
Temperature, Operating, Maximum +150 °C
International Rectifier Temperature, Operating, Maximum +150 °C
IGBT Transistors Temperature, Operating, Maximum +150 °C
International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
IGBT Transistors Temperature, Operating, Minimum -55 °C
International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
International Rectifier Temperature, Operating, Range -55 to +150 °C
IGBT Transistors Temperature, Operating, Range -55 to +150 °C
International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C
Transistor Type NPN
International Rectifier Transistor Type NPN
IGBT Transistors Transistor Type NPN
International Rectifier IGBT Transistors Transistor Type NPN
Type Warp
International Rectifier Type Warp
IGBT Transistors Type Warp
International Rectifier IGBT Transistors Type Warp
Voltage, Collector to Emitter 2.3 V
International Rectifier Voltage, Collector to Emitter 2.3 V
IGBT Transistors Voltage, Collector to Emitter 2.3 V
International Rectifier IGBT Transistors Voltage, Collector to Emitter 2.3 V
Voltage, Collector to Emitter Shorted 600 V
International Rectifier Voltage, Collector to Emitter Shorted 600 V
IGBT Transistors Voltage, Collector to Emitter Shorted 600 V
International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 600 V
Voltage, Gate to Emitter ±20 V
International Rectifier Voltage, Gate to Emitter ±20 V
IGBT Transistors Voltage, Gate to Emitter ±20 V
International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V
Width 0.209" (5.3mm)
International Rectifier Width 0.209" (5.3mm)
IGBT Transistors Width 0.209" (5.3mm)
International Rectifier IGBT Transistors Width 0.209" (5.3mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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