Brand/Series |
HEXFET Series |
|
Capacitance, Input |
1150 pF @ 50 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Dual Drain |
|
Current, Drain |
43 A |
|
Dimensions |
6.73 x 6.22 x 2.39 mm |
|
Gate Charge, Total |
22 nC |
|
Height |
0.094" (2.39mm) |
|
Length |
0.264" (6.73mm) |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
DPAK |
|
Polarization |
N-Channel |
|
Power Dissipation |
71 W |
|
Resistance, Drain to Source On |
15.8 mΩ |
|
Temperature, Operating, Maximum |
+175 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +175 °C |
|
Time, Turn-Off Delay |
49 ns |
|
Time, Turn-On Delay |
6.3 ns |
|
Transconductance, Forward |
41 S |
|
Typical Gate Charge @ Vgs |
22 nC @ 10 V |
|
Voltage, Breakdown, Drain to Source |
60 V |
|
Voltage, Drain to Source |
60 V |
|
Voltage, Forward, Diode |
1.3 V |
|
Voltage, Gate to Source |
±20 V |
|
Width |
0.245" (6.22mm) |
|
關鍵詞 |