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IRFB4227PBF - 

MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 19.7 Milliohms; ID 65A; TO-220AB; PD 330W

International Rectifier IRFB4227PBF
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制造商產(chǎn)品編號(hào)：
IRFB4227PBF
倉(cāng)庫(kù)庫(kù)存編號(hào)：
70017362
技術(shù)數(shù)據(jù)表：
View IRFB4227PBF Datasheet Datasheet
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IRFB4227PBF產(chǎn)品概述

"This HEXFET Power MOSFET is specially designed for Sustain; nergy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low Epulse rating. Additional features of this MOSFET are 175C operating junction temperature and high repetitive current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications."
"Features:
  • Advanced Process Technology
  • Key Parameters Optimized for PDP Sustain, Energy Recovery and pass Switch Applications
  • Low E pulse rating to reduce power dissipation in PDP applications
  • Low Qg for fast Response
  • High Repetitive Peak current capability for reliable operation
  • Short fall & rise times for fast switching
  • 175 degC operating junction temperature for improved ruggedness
  • Repetitive Avalanche capability for robustness and reliability"

    • IRFB4227PBF產(chǎn)品信息

      Brand/Series  HEXFET Series  
      Capacitance, Input  4600 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  65 A  
      Dimensions  10.66 x 4.82 x 16.51 mm  
      Gate Charge, Total  70 nC  
      Height  0.65" (16.51mm)  
      Length  0.419" (10.66mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  330 W  
      Resistance, Drain to Source On  24 mΩ  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -40 °C  
      Temperature, Operating, Range  -40 to +175 °C  
      Time, Turn-Off Delay  21 ns  
      Time, Turn-On Delay  33 ns  
      Transconductance, Forward  49 S  
      Typical Gate Charge @ Vgs  70 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  200 V  
      Voltage, Drain to Source  200 V  
      Voltage, Forward, Diode  1.3 V  
      Voltage, Gate to Source  ± 30 V  
      Width  0.19" (4.82mm)  
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    IRFB4227PBF相關(guān)搜索

    Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 4600 pF @ 25 V  International Rectifier Capacitance, Input 4600 pF @ 25 V  MOSFET Transistors Capacitance, Input 4600 pF @ 25 V  International Rectifier MOSFET Transistors Capacitance, Input 4600 pF @ 25 V   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N  International Rectifier Channel Type N  MOSFET Transistors Channel Type N  International Rectifier MOSFET Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  MOSFET Transistors Configuration Single  International Rectifier MOSFET Transistors Configuration Single   Current, Drain 65 A  International Rectifier Current, Drain 65 A  MOSFET Transistors Current, Drain 65 A  International Rectifier MOSFET Transistors Current, Drain 65 A   Dimensions 10.66 x 4.82 x 16.51 mm  International Rectifier Dimensions 10.66 x 4.82 x 16.51 mm  MOSFET Transistors Dimensions 10.66 x 4.82 x 16.51 mm  International Rectifier MOSFET Transistors Dimensions 10.66 x 4.82 x 16.51 mm   Gate Charge, Total 70 nC  International Rectifier Gate Charge, Total 70 nC  MOSFET Transistors Gate Charge, Total 70 nC  International Rectifier MOSFET Transistors Gate Charge, Total 70 nC   Height 0.65" (16.51mm)  International Rectifier Height 0.65" (16.51mm)  MOSFET Transistors Height 0.65" (16.51mm)  International Rectifier MOSFET Transistors Height 0.65" (16.51mm)   Length 0.419" (10.66mm)  International Rectifier Length 0.419" (10.66mm)  MOSFET Transistors Length 0.419" (10.66mm)  International Rectifier MOSFET Transistors Length 0.419" (10.66mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  International Rectifier MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  International Rectifier Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  International Rectifier MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  International Rectifier Number of Pins 3  MOSFET Transistors Number of Pins 3  International Rectifier MOSFET Transistors Number of Pins 3   Package Type TO-220AB  International Rectifier Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  International Rectifier MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  International Rectifier Polarization N-Channel  MOSFET Transistors Polarization N-Channel  International Rectifier MOSFET Transistors Polarization N-Channel   Power Dissipation 330 W  International Rectifier Power Dissipation 330 W  MOSFET Transistors Power Dissipation 330 W  International Rectifier MOSFET 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Transistors Temperature, Operating, Range -40 to +175 °C   Time, Turn-Off Delay 21 ns  International Rectifier Time, Turn-Off Delay 21 ns  MOSFET Transistors Time, Turn-Off Delay 21 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 21 ns   Time, Turn-On Delay 33 ns  International Rectifier Time, Turn-On Delay 33 ns  MOSFET Transistors Time, Turn-On Delay 33 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 33 ns   Transconductance, Forward 49 S  International Rectifier Transconductance, Forward 49 S  MOSFET Transistors Transconductance, Forward 49 S  International Rectifier MOSFET Transistors Transconductance, Forward 49 S   Typical Gate Charge @ Vgs 70 nC @ 10 V  International Rectifier Typical Gate Charge @ Vgs 70 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 70 nC @ 10 V  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 70 nC @ 10 V   Voltage, Breakdown, Drain to Source 200 V  International Rectifier Voltage, 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