專業(yè)銷售Amphenol(安費(fèi)諾)全系列產(chǎn)品-英國(guó)2號(hào)倉庫
關(guān)于我們
|
聯(lián)系我們
庫存查詢
Amphenol產(chǎn)品選型
按產(chǎn)品分類選型
按制造商選型
聯(lián)系我們
美國(guó)1號(hào)分類選型
新加坡2號(hào)分類選型
英國(guó)10號(hào)分類選型
英國(guó)2號(hào)分類選型
日本5號(hào)分類選型
在本站結(jié)果里搜索:
熱門搜索詞:
Connectors
8910DPA43V02
Amphenol
UVZSeries 160VDC
70084122
IM21-14-CDTRI
英國(guó)2號(hào)倉庫
>
Semiconductors
>
Discrete Semiconductors
>
Transistors & Modules
>
MOSFET Transistors
>
IRFB23N20DPBF
IRFB23N20DPBF -
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.1Ohm; ID 24A; TO-220AB; PD 170W; VGS +/-30V
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號(hào):
IRFB23N20DPBF
倉庫庫存編號(hào):
70017019
技術(shù)數(shù)據(jù)表:
Datasheet
訂購熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量,謝謝合作!
IRFB23N20DPBF產(chǎn)品概述
HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRFB23N20DPBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
1960 pF @ 25 V
Channel Mode
Enhancement
Channel Type
N
Configuration
Dual Drain
Current, Drain
24 A
Dimensions
10.54 x 4.69 x 8.77 mm
Gate Charge, Total
57 nC
Height
0.345" (8.77mm)
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
3
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
170 W
Resistance, Drain to Source On
0.1 Ω
Resistance, Thermal, Junction to Case
0.9 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +175 °C
Time, Turn-Off Delay
26 ns
Time, Turn-On Delay
14 ns
Transconductance, Forward
13 S
Typical Gate Charge @ Vgs
57 nC @ 10 V
Voltage, Breakdown, Drain to Source
200 V
Voltage, Drain to Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate to Source
±30 V
Width
0.185" (4.69mm)
關(guān)鍵詞
IRFB23N20DPBF客戶還搜索了
參考圖片
制造商 / 說明 / 型號(hào) / 倉庫庫存編號(hào)
PDF
操作
HVCA
Bridge Rectifier; 200V; 300A; 140V; 25A
型號(hào):
KBPC2502
倉庫庫存編號(hào):
70015997
搜索
Amphenol FCI
connector, crimp-to-wire housing, single row, 2.54mm(.100)cont centers, 4 position
型號(hào):
65039-033LF
倉庫庫存編號(hào):
70088998
搜索
Johnson-Cinch Connectivity Solutions
Black Banana Jack, (Brass/Tin), 7000V (RMS/Min), 15A, Insulated Solder Terminal,
型號(hào):
108-0903-001
倉庫庫存編號(hào):
70090206
搜索
L-com Connectivity
Adapter; USB Type A - Type B; USB; EMI/RFI
型號(hào):
ECF504-UABS
倉庫庫存編號(hào):
70126194
搜索
L-com Connectivity
Coupler Shielded (8x8) Panel Mount Style Cat6 RJ45
型號(hào):
ECF504-SC6
倉庫庫存編號(hào):
70126211
搜索
Opto 22
Module; 5 to 60 VDC; 3 A @ 45 deg C (Ambient); DC; 1 mA (Max.); -30 to degC
型號(hào):
G4ODC24
倉庫庫存編號(hào):
70133561
搜索
Amphenol Industrial
connector, metal circular, str plug w/cable clamp, size 10, 6 #20 solder pin contact
型號(hào):
MS3116F10-6P
倉庫庫存編號(hào):
70143352
搜索
Nichicon
Capacitor Aluminum Electrolytic Cap100uF 63V 20% Radial 10X20 LS 5mm
型號(hào):
UPM1J101MPD
倉庫庫存編號(hào):
70187772
搜索
Essentra Components
SPACER TUBULAR GEN PURP
型號(hào):
CER-3
倉庫庫存編號(hào):
70208727
搜索
Sunon Fans
Fan; AC; 220-240V; 120x120x38mm; Sq; 117CFM; 50dBA; 21W; 3150RPM; Terminals
型號(hào):
DP200A-2123XBT.GN
倉庫庫存編號(hào):
70225923
搜索
IRFB23N20DPBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 1960 pF @ 25 V
International Rectifier Capacitance, Input 1960 pF @ 25 V
MOSFET Transistors Capacitance, Input 1960 pF @ 25 V
International Rectifier MOSFET Transistors Capacitance, Input 1960 pF @ 25 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Dual Drain
International Rectifier Configuration Dual Drain
MOSFET Transistors Configuration Dual Drain
International Rectifier MOSFET Transistors Configuration Dual Drain
Current, Drain 24 A
International Rectifier Current, Drain 24 A
MOSFET Transistors Current, Drain 24 A
International Rectifier MOSFET Transistors Current, Drain 24 A
Dimensions 10.54 x 4.69 x 8.77 mm
International Rectifier Dimensions 10.54 x 4.69 x 8.77 mm
MOSFET Transistors Dimensions 10.54 x 4.69 x 8.77 mm
International Rectifier MOSFET Transistors Dimensions 10.54 x 4.69 x 8.77 mm
Gate Charge, Total 57 nC
International Rectifier Gate Charge, Total 57 nC
MOSFET Transistors Gate Charge, Total 57 nC
International Rectifier MOSFET Transistors Gate Charge, Total 57 nC
Height 0.345" (8.77mm)
International Rectifier Height 0.345" (8.77mm)
MOSFET Transistors Height 0.345" (8.77mm)
International Rectifier MOSFET Transistors Height 0.345" (8.77mm)
Mounting Type Through Hole
International Rectifier Mounting Type Through Hole
MOSFET Transistors Mounting Type Through Hole
International Rectifier MOSFET Transistors Mounting Type Through Hole
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 3
International Rectifier Number of Pins 3
MOSFET Transistors Number of Pins 3
International Rectifier MOSFET Transistors Number of Pins 3
Package Type TO-220AB
International Rectifier Package Type TO-220AB
MOSFET Transistors Package Type TO-220AB
International Rectifier MOSFET Transistors Package Type TO-220AB
Polarization N-Channel
International Rectifier Polarization N-Channel
MOSFET Transistors Polarization N-Channel
International Rectifier MOSFET Transistors Polarization N-Channel
Power Dissipation 170 W
International Rectifier Power Dissipation 170 W
MOSFET Transistors Power Dissipation 170 W
International Rectifier MOSFET Transistors Power Dissipation 170 W
Resistance, Drain to Source On 0.1 Ω
International Rectifier Resistance, Drain to Source On 0.1 Ω
MOSFET Transistors Resistance, Drain to Source On 0.1 Ω
International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.1 Ω
Resistance, Thermal, Junction to Case 0.9 °C/W
International Rectifier Resistance, Thermal, Junction to Case 0.9 °C/W
MOSFET Transistors Resistance, Thermal, Junction to Case 0.9 °C/W
International Rectifier MOSFET Transistors Resistance, Thermal, Junction to Case 0.9 °C/W
Temperature, Operating, Maximum +175 °C
International Rectifier Temperature, Operating, Maximum +175 °C
MOSFET Transistors Temperature, Operating, Maximum +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +175 °C
International Rectifier Temperature, Operating, Range -55 to +175 °C
MOSFET Transistors Temperature, Operating, Range -55 to +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C
Time, Turn-Off Delay 26 ns
International Rectifier Time, Turn-Off Delay 26 ns
MOSFET Transistors Time, Turn-Off Delay 26 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 26 ns
Time, Turn-On Delay 14 ns
International Rectifier Time, Turn-On Delay 14 ns
MOSFET Transistors Time, Turn-On Delay 14 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 14 ns
Transconductance, Forward 13 S
International Rectifier Transconductance, Forward 13 S
MOSFET Transistors Transconductance, Forward 13 S
International Rectifier MOSFET Transistors Transconductance, Forward 13 S
Typical Gate Charge @ Vgs 57 nC @ 10 V
International Rectifier Typical Gate Charge @ Vgs 57 nC @ 10 V
MOSFET Transistors Typical Gate Charge @ Vgs 57 nC @ 10 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 57 nC @ 10 V
Voltage, Breakdown, Drain to Source 200 V
International Rectifier Voltage, Breakdown, Drain to Source 200 V
MOSFET Transistors Voltage, Breakdown, Drain to Source 200 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 200 V
Voltage, Drain to Source 200 V
International Rectifier Voltage, Drain to Source 200 V
MOSFET Transistors Voltage, Drain to Source 200 V
International Rectifier MOSFET Transistors Voltage, Drain to Source 200 V
Voltage, Forward, Diode 1.3 V
International Rectifier Voltage, Forward, Diode 1.3 V
MOSFET Transistors Voltage, Forward, Diode 1.3 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V
Voltage, Gate to Source ±30 V
International Rectifier Voltage, Gate to Source ±30 V
MOSFET Transistors Voltage, Gate to Source ±30 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±30 V
Width 0.185" (4.69mm)
International Rectifier Width 0.185" (4.69mm)
MOSFET Transistors Width 0.185" (4.69mm)
International Rectifier MOSFET Transistors Width 0.185" (4.69mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
美國(guó)1號(hào)品牌選型
新加坡2號(hào)品牌選型
英國(guó)2號(hào)品牌選型
英國(guó)10號(hào)品牌選型
日本5號(hào)品牌選型
關(guān)于我們
|
Amphenol簡(jiǎn)介
|
Amphenol產(chǎn)品
|
Amphenol產(chǎn)品應(yīng)用
|
Amphenol動(dòng)態(tài)
|
按系列選型
|
按產(chǎn)品規(guī)格選型
|
Amphenol選型手冊(cè)
|
付款方式
|
聯(lián)系我們
Copyright © 2017
training-know-how.com
All Rights Reserved. 技術(shù)支持:
電子元器件
ICP備案證書號(hào):
粵ICP備11103613號(hào)