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70084122
IM21-14-CDTRI
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IRF7342TRPBF
IRF7342TRPBF -
MOSFET, Power; Dual P-Ch; VDSS -55V; RDS(ON) 0.105Ohm; ID -3.4A; SO-8; PD 2W; VGS +/-20
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號(hào):
IRF7342TRPBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70017508
技術(shù)數(shù)據(jù)表:
Datasheet
訂購(gòu)熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!
IRF7342TRPBF產(chǎn)品概述
HEXFET® P-Channel Power MOSFETs, Infineon
HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRF7342TRPBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
690 pF @ -25 V
Channel Mode
Enhancement
Channel Type
P
Configuration
Dual Drain
Current, Drain
-3.4 A
Dimensions
5.00 x 4.00 x 1.50 mm
Gate Charge, Total
26 nC
Height
0.059" (1.5mm)
Length
0.196" (5mm)
Mounting Type
Surface Mount
Number of Elements per Chip
2
Number of Pins
8
Package Type
SO-8
Polarization
Dual P-Channel
Power Dissipation
2 W
Resistance, Drain to Source On
0.17 Ω
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-50 °C
Temperature, Operating, Range
-50 to +150 °C
Time, Turn-Off Delay
43 ns
Time, Turn-On Delay
14 ns
Transconductance, Forward
3.3 S
Typical Gate Charge @ Vgs
26 nC @ -10 V
Voltage, Breakdown, Drain to Source
-55 V
Voltage, Drain to Source
-55 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate to Source
±20 V
Width
0.157" (4mm)
關(guān)鍵詞
IRF7342TRPBF客戶還搜索了
參考圖片
制造商 / 說(shuō)明 / 型號(hào) / 倉(cāng)庫(kù)庫(kù)存編號(hào)
PDF
操作
International Rectifier
IRF7341TRPBF Dual N-channel MOSFET Transistor, 4.7 A, 55 V, 8-Pin SOIC
型號(hào):
IRF7341TRPBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70017698
搜索
Ohmite
Resistor; Wirewound; Res 15 Kilohms; Pwr-Rtg 5 W; Tol 1%; Axial; Silicone-Ceramic
型號(hào):
45F15KE
倉(cāng)庫(kù)庫(kù)存編號(hào):
70023368
搜索
Amphenol RF
connector, rf coaxial, bnc in-series adapter, bulkhead jack to jack, 75 ohm
型號(hào):
112438
倉(cāng)庫(kù)庫(kù)存編號(hào):
70031722
搜索
Caddock
Resistor; Thick Film; Res 25 Ohms; Pwr-Rtg50 W; Tol 1%; Radial; TO-220; Heat Sink
型號(hào):
MP850-25.0-1%
倉(cāng)庫(kù)庫(kù)存編號(hào):
70089472
搜索
Molex Incorporated
Conn; Rect/PCB; Header; 2-Row; Vert.; w/Peg; 12 Cir; Gold Plat; Micro-Fit 3.0; w/PC Tails
型號(hào):
43045-1214
倉(cāng)庫(kù)庫(kù)存編號(hào):
70090751
搜索
3M
Shunt Midgie; Copper Alloy; 50 uin. Nickel; 1; Black; gt 5 x 109 Ohms @ 500 VDC
型號(hào):
929950-00
倉(cāng)庫(kù)庫(kù)存編號(hào):
70114996
搜索
Quest Technology International, Inc.
N Connector; N Male; Brass; RG58 cable
型號(hào):
CNC-6123
倉(cāng)庫(kù)庫(kù)存編號(hào):
70121103
搜索
Quest Technology International, Inc.
N Connector; N Female; Brass; RG-58 cable
型號(hào):
CNC-3024
倉(cāng)庫(kù)庫(kù)存編號(hào):
70121107
搜索
IRF7342TRPBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 690 pF @ -25 V
International Rectifier Capacitance, Input 690 pF @ -25 V
MOSFET Transistors Capacitance, Input 690 pF @ -25 V
International Rectifier MOSFET Transistors Capacitance, Input 690 pF @ -25 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type P
International Rectifier Channel Type P
MOSFET Transistors Channel Type P
International Rectifier MOSFET Transistors Channel Type P
Configuration Dual Drain
International Rectifier Configuration Dual Drain
MOSFET Transistors Configuration Dual Drain
International Rectifier MOSFET Transistors Configuration Dual Drain
Current, Drain -3.4 A
International Rectifier Current, Drain -3.4 A
MOSFET Transistors Current, Drain -3.4 A
International Rectifier MOSFET Transistors Current, Drain -3.4 A
Dimensions 5.00 x 4.00 x 1.50 mm
International Rectifier Dimensions 5.00 x 4.00 x 1.50 mm
MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm
International Rectifier MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm
Gate Charge, Total 26 nC
International Rectifier Gate Charge, Total 26 nC
MOSFET Transistors Gate Charge, Total 26 nC
International Rectifier MOSFET Transistors Gate Charge, Total 26 nC
Height 0.059" (1.5mm)
International Rectifier Height 0.059" (1.5mm)
MOSFET Transistors Height 0.059" (1.5mm)
International Rectifier MOSFET Transistors Height 0.059" (1.5mm)
Length 0.196" (5mm)
International Rectifier Length 0.196" (5mm)
MOSFET Transistors Length 0.196" (5mm)
International Rectifier MOSFET Transistors Length 0.196" (5mm)
Mounting Type Surface Mount
International Rectifier Mounting Type Surface Mount
MOSFET Transistors Mounting Type Surface Mount
International Rectifier MOSFET Transistors Mounting Type Surface Mount
Number of Elements per Chip 2
International Rectifier Number of Elements per Chip 2
MOSFET Transistors Number of Elements per Chip 2
International Rectifier MOSFET Transistors Number of Elements per Chip 2
Number of Pins 8
International Rectifier Number of Pins 8
MOSFET Transistors Number of Pins 8
International Rectifier MOSFET Transistors Number of Pins 8
Package Type SO-8
International Rectifier Package Type SO-8
MOSFET Transistors Package Type SO-8
International Rectifier MOSFET Transistors Package Type SO-8
Polarization Dual P-Channel
International Rectifier Polarization Dual P-Channel
MOSFET Transistors Polarization Dual P-Channel
International Rectifier MOSFET Transistors Polarization Dual P-Channel
Power Dissipation 2 W
International Rectifier Power Dissipation 2 W
MOSFET Transistors Power Dissipation 2 W
International Rectifier MOSFET Transistors Power Dissipation 2 W
Resistance, Drain to Source On 0.17 Ω
International Rectifier Resistance, Drain to Source On 0.17 Ω
MOSFET Transistors Resistance, Drain to Source On 0.17 Ω
International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.17 Ω
Temperature, Operating, Maximum +150 °C
International Rectifier Temperature, Operating, Maximum +150 °C
MOSFET Transistors Temperature, Operating, Maximum +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -50 °C
International Rectifier Temperature, Operating, Minimum -50 °C
MOSFET Transistors Temperature, Operating, Minimum -50 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -50 °C
Temperature, Operating, Range -50 to +150 °C
International Rectifier Temperature, Operating, Range -50 to +150 °C
MOSFET Transistors Temperature, Operating, Range -50 to +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -50 to +150 °C
Time, Turn-Off Delay 43 ns
International Rectifier Time, Turn-Off Delay 43 ns
MOSFET Transistors Time, Turn-Off Delay 43 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 43 ns
Time, Turn-On Delay 14 ns
International Rectifier Time, Turn-On Delay 14 ns
MOSFET Transistors Time, Turn-On Delay 14 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 14 ns
Transconductance, Forward 3.3 S
International Rectifier Transconductance, Forward 3.3 S
MOSFET Transistors Transconductance, Forward 3.3 S
International Rectifier MOSFET Transistors Transconductance, Forward 3.3 S
Typical Gate Charge @ Vgs 26 nC @ -10 V
International Rectifier Typical Gate Charge @ Vgs 26 nC @ -10 V
MOSFET Transistors Typical Gate Charge @ Vgs 26 nC @ -10 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 26 nC @ -10 V
Voltage, Breakdown, Drain to Source -55 V
International Rectifier Voltage, Breakdown, Drain to Source -55 V
MOSFET Transistors Voltage, Breakdown, Drain to Source -55 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source -55 V
Voltage, Drain to Source -55 V
International Rectifier Voltage, Drain to Source -55 V
MOSFET Transistors Voltage, Drain to Source -55 V
International Rectifier MOSFET Transistors Voltage, Drain to Source -55 V
Voltage, Forward, Diode -1.2 V
International Rectifier Voltage, Forward, Diode -1.2 V
MOSFET Transistors Voltage, Forward, Diode -1.2 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode -1.2 V
Voltage, Gate to Source ±20 V
International Rectifier Voltage, Gate to Source ±20 V
MOSFET Transistors Voltage, Gate to Source ±20 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V
Width 0.157" (4mm)
International Rectifier Width 0.157" (4mm)
MOSFET Transistors Width 0.157" (4mm)
International Rectifier MOSFET Transistors Width 0.157" (4mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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