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P-Channel Power MOSFETs up to 7A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Brand/Series	HEXFET Series
Capacitance, Input	860 pF @ -10 V
Channel Mode	Enhancement
Channel Type	P
Configuration	Quad Drain, Triple Source
Current, Drain	-5.3 A
Dimensions	5.00 x 4.00 x 1.50 mm
Gate Charge, Total	25 nC
Height	0.059" (1.5mm)
Length	0.196" (5mm)
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	8
Package Type	SO-8
Polarization	P-Channel
Power Dissipation	2.5 W
Resistance, Drain to Source On	0.1 Ω
Resistance, Thermal, Junction to Case	50 °C/W
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	100 ns
Time, Turn-On Delay	14 ns
Transconductance, Forward	7.9 S
Typical Gate Charge @ Vgs	25 nC @ -10 V
Voltage, Breakdown, Drain to Source	-20 V
Voltage, Drain to Source	-20 V
Voltage, Forward, Diode	-1.2 V
Voltage, Gate to Source	±12 V
Width	0.157" (4mm)
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Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 860 pF @ -10 V  International Rectifier Capacitance, Input 860 pF @ -10 V  MOSFET Transistors Capacitance, Input 860 pF @ -10 V  International Rectifier MOSFET Transistors Capacitance, Input 860 pF @ -10 V   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type P  International Rectifier Channel Type P  MOSFET Transistors Channel Type P  International Rectifier MOSFET Transistors Channel Type P   Configuration Quad Drain, Triple Source  International Rectifier Configuration Quad Drain, Triple Source  MOSFET Transistors Configuration Quad Drain, Triple Source  International Rectifier MOSFET Transistors Configuration Quad Drain, Triple Source   Current, Drain -5.3 A  International Rectifier Current, Drain -5.3 A  MOSFET Transistors Current, Drain -5.3 A  International Rectifier MOSFET Transistors Current, Drain -5.3 A   Dimensions 5.00 x 4.00 x 1.50 mm  International Rectifier Dimensions 5.00 x 4.00 x 1.50 mm  MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm  International Rectifier MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm   Gate Charge, Total 25 nC  International Rectifier Gate Charge, Total 25 nC  MOSFET Transistors Gate Charge, Total 25 nC  International Rectifier MOSFET Transistors Gate Charge, Total 25 nC   Height 0.059" (1.5mm)  International Rectifier Height 0.059" (1.5mm)  MOSFET Transistors Height 0.059" (1.5mm)  International Rectifier MOSFET Transistors Height 0.059" (1.5mm)   Length 0.196" (5mm)  International Rectifier Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  International Rectifier MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  International Rectifier Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  International Rectifier MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  International Rectifier Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  International Rectifier MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  International Rectifier Number of Pins 8  MOSFET Transistors Number of Pins 8  International Rectifier MOSFET Transistors Number of Pins 8   Package Type SO-8  International Rectifier Package Type SO-8  MOSFET Transistors Package Type SO-8  International Rectifier MOSFET Transistors Package Type SO-8   Polarization P-Channel  International Rectifier Polarization P-Channel  MOSFET Transistors Polarization P-Channel  International Rectifier MOSFET Transistors Polarization P-Channel   Power Dissipation 2.5 W  International Rectifier Power Dissipation 2.5 W  MOSFET Transistors Power Dissipation 2.5 W  International Rectifier MOSFET Transistors Power Dissipation 2.5 W   Resistance, Drain to Source On 0.1 Ω  International Rectifier Resistance, Drain to Source On 0.1 Ω  MOSFET Transistors Resistance, Drain to Source On 0.1 Ω  International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.1 Ω   Resistance, Thermal, Junction to Case 50 °C/W  International Rectifier Resistance, Thermal, Junction to Case 50 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 50 °C/W  International Rectifier MOSFET Transistors Resistance, Thermal, Junction to Case 50 °C/W   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 100 ns  International Rectifier Time, Turn-Off Delay 100 ns  MOSFET Transistors Time, Turn-Off Delay 100 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 100 ns   Time, Turn-On Delay 14 ns  International Rectifier Time, Turn-On Delay 14 ns  MOSFET Transistors Time, Turn-On Delay 14 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 14 ns   Transconductance, Forward 7.9 S  International Rectifier Transconductance, Forward 7.9 S  MOSFET Transistors Transconductance, Forward 7.9 S  International Rectifier MOSFET Transistors Transconductance, Forward 7.9 S   Typical Gate Charge @ Vgs 25 nC @ -10 V  International Rectifier Typical Gate Charge @ Vgs 25 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 25 nC @ -10 V  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 25 nC @ -10 V   Voltage, Breakdown, Drain to Source -20 V  International Rectifier Voltage, Breakdown, Drain to Source -20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V   Voltage, Drain to Source -20 V  International Rectifier Voltage, Drain to Source -20 V  MOSFET Transistors Voltage, Drain to Source -20 V  International Rectifier MOSFET Transistors Voltage, Drain to Source -20 V   Voltage, Forward, Diode -1.2 V  International Rectifier Voltage, Forward, Diode -1.2 V  MOSFET Transistors Voltage, Forward, Diode -1.2 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode -1.2 V   Voltage, Gate to Source ±12 V  International Rectifier Voltage, Gate to Source ±12 V  MOSFET Transistors Voltage, Gate to Source ±12 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±12 V   Width 0.157" (4mm)  International Rectifier Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  International Rectifier MOSFET Transistors Width 0.157" (4mm)