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IRF3205ZPBF - 

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 4.9Milliohms; ID 110A; TO-220AB; PD 170W; -55de

International Rectifier IRF3205ZPBF
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制造商產(chǎn)品編號：
IRF3205ZPBF
倉庫庫存編號：
70016921
技術(shù)數(shù)據(jù)表：
View IRF3205ZPBF Datasheet Datasheet
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IRF3205ZPBF產(chǎn)品概述

Power MOSFET, Pulsed Drain Current 440 A, Input Capacitance 3450 pF
  • Advanced process technology
  • Ultra low on-resistance
  • 150 °C operating temperature
  • Fast switching
  • Repetitive avalanche allowed up to Tjmax
  • Lead-free
    Specifically designed for automotive applications, this HEXFET® power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 °C junction operating temperature

    • IRF3205ZPBF產(chǎn)品信息

      Application  For automotive applications  
      Brand/Series  HEXFET Series  
      Capacitance, Input  3450 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  110 A  
      Dimensions  10.67 x 4.83 x 9.02 mm  
      Fall Time  67 ns (Typ.)  
      Gate Charge, Total  76 nC  
      Height  0.355" (9.02mm)  
      Length  0.42" (10.67mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +175 °C (Max.)  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  170 W  
      Resistance, Drain to Source On  6.5 mΩ  
      Resistance, Thermal, Junction to Case  0.90 °C?W (Max.)  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +175 °C  
      Thermal Resistance, Junction to Ambient  62 °C⁄W  
      Time, Turn-Off Delay  45 ns  
      Time, Turn-On Delay  18 ns  
      Transconductance, Forward  71 S  
      Typical Gate Charge @ Vgs  76 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  55 V  
      Voltage, Drain to Source  55 V  
      Voltage, Forward, Diode  1.3 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.19" (4.83mm)  
    關(guān)鍵詞         

    IRF3205ZPBF相關(guān)搜索

    Application For automotive applications  International Rectifier Application For automotive applications  MOSFET Transistors Application For automotive applications  International Rectifier MOSFET Transistors Application For automotive applications   Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 3450 pF @ 25 V  International Rectifier Capacitance, Input 3450 pF @ 25 V  MOSFET Transistors Capacitance, Input 3450 pF @ 25 V  International Rectifier MOSFET Transistors Capacitance, Input 3450 pF @ 25 V   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N  International Rectifier Channel Type N  MOSFET Transistors Channel Type N  International Rectifier MOSFET Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  MOSFET Transistors Configuration Single  International Rectifier MOSFET Transistors Configuration Single   Current, Drain 110 A  International Rectifier Current, Drain 110 A  MOSFET Transistors Current, Drain 110 A  International Rectifier MOSFET Transistors Current, Drain 110 A   Dimensions 10.67 x 4.83 x 9.02 mm  International Rectifier Dimensions 10.67 x 4.83 x 9.02 mm  MOSFET Transistors Dimensions 10.67 x 4.83 x 9.02 mm  International Rectifier MOSFET Transistors Dimensions 10.67 x 4.83 x 9.02 mm   Fall Time 67 ns (Typ.)  International Rectifier Fall Time 67 ns (Typ.)  MOSFET Transistors Fall Time 67 ns (Typ.)  International Rectifier MOSFET Transistors Fall Time 67 ns (Typ.)   Gate Charge, Total 76 nC  International Rectifier Gate Charge, Total 76 nC  MOSFET Transistors Gate Charge, Total 76 nC  International Rectifier MOSFET Transistors Gate Charge, Total 76 nC   Height 0.355" (9.02mm)  International Rectifier Height 0.355" (9.02mm)  MOSFET Transistors Height 0.355" (9.02mm)  International Rectifier MOSFET Transistors Height 0.355" (9.02mm)   Length 0.42" (10.67mm)  International Rectifier Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  International Rectifier MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  International Rectifier MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  International Rectifier Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  International Rectifier MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  International Rectifier Number of Pins 3  MOSFET Transistors Number of Pins 3  International Rectifier MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +175 °C (Max.)  International Rectifier Operating and Storage Temperature -55 to +175 °C (Max.)  MOSFET Transistors Operating and Storage Temperature -55 to +175 °C (Max.)  International Rectifier MOSFET Transistors Operating and Storage Temperature -55 to +175 °C (Max.)   Package Type TO-220AB  International Rectifier Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  International Rectifier MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  International Rectifier Polarization N-Channel  MOSFET Transistors Polarization N-Channel  International Rectifier MOSFET Transistors Polarization N-Channel   Power Dissipation 170 W  International Rectifier Power Dissipation 170 W  MOSFET Transistors Power Dissipation 170 W  International Rectifier MOSFET Transistors Power Dissipation 170 W   Resistance, Drain to Source On 6.5 mΩ  International Rectifier Resistance, Drain to Source On 6.5 mΩ  MOSFET Transistors Resistance, Drain to Source On 6.5 mΩ  International Rectifier MOSFET Transistors Resistance, Drain to Source On 6.5 mΩ   Resistance, Thermal, Junction to Case 0.90 °C?W (Max.)  International Rectifier Resistance, Thermal, Junction to Case 0.90 °C?W (Max.)  MOSFET Transistors Resistance, Thermal, Junction to Case 0.90 °C?W (Max.)  International Rectifier MOSFET Transistors Resistance, Thermal, Junction to Case 0.90 °C?W (Max.)   Temperature, Operating, Maximum +175 °C  International Rectifier Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  International Rectifier Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Thermal Resistance, Junction to Ambient 62 °C⁄W  International Rectifier Thermal Resistance, Junction to Ambient 62 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C⁄W  International Rectifier MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C⁄W   Time, Turn-Off Delay 45 ns  International Rectifier Time, Turn-Off Delay 45 ns  MOSFET Transistors Time, Turn-Off Delay 45 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 45 ns   Time, Turn-On Delay 18 ns  International Rectifier Time, Turn-On Delay 18 ns  MOSFET Transistors Time, Turn-On Delay 18 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 18 ns   Transconductance, Forward 71 S  International Rectifier Transconductance, Forward 71 S  MOSFET Transistors Transconductance, Forward 71 S  International Rectifier MOSFET Transistors Transconductance, Forward 71 S   Typical Gate Charge @ Vgs 76 nC @ 10 V  International Rectifier Typical Gate Charge @ Vgs 76 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 76 nC @ 10 V  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 76 nC @ 10 V   Voltage, Breakdown, Drain to Source 55 V  International Rectifier Voltage, Breakdown, Drain to Source 55 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V   Voltage, Drain to Source 55 V  International Rectifier Voltage, Drain to Source 55 V  MOSFET Transistors Voltage, Drain to Source 55 V  International Rectifier MOSFET Transistors Voltage, Drain to Source 55 V   Voltage, Forward, Diode 1.3 V  International Rectifier Voltage, Forward, Diode 1.3 V  MOSFET Transistors Voltage, Forward, Diode 1.3 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V   Voltage, Gate to Source ±20 V  International Rectifier Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.19" (4.83mm)  International Rectifier Width 0.19" (4.83mm)  MOSFET Transistors Width 0.19" (4.83mm)  International Rectifier MOSFET Transistors Width 0.19" (4.83mm)  
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