Capacitance, Junction |
50 pF |
|
Configuration |
Single |
|
Current, Forward, Continuous |
3 A |
|
Current, On-State, Non-Repetitive Peak |
200 A |
|
Current, Peak |
50 μA |
|
Current, Reverse |
5 μA |
|
Current, Surge |
200 A |
|
Diameter |
5.3 mm |
|
Dimensions |
5.3 Dia. x 9.6 L mm |
|
Diode Type |
Silicon Rectifier |
|
Length |
0.377" (9.6mm) |
|
Mounting Type |
Through Hole |
|
Number of Pins |
2 |
|
Package Type |
DO-201AD |
|
Primary Type |
Rectifier |
|
Rectifier Type |
Switching |
|
Speed, Switching |
Standard |
|
Temperature, Junction, Maximum |
170 °C |
|
Temperature, Operating |
-55 to 170 °C |
|
Temperature, Operating, Maximum |
+125 °C |
|
Temperature, Operating, Minimum |
-65 °C |
|
Temperature, Operating, Range |
-65 to +125 °C |
|
Thermal Resistance, Junction to Ambient |
18 °C⁄W |
|
Type |
GP |
|
Voltage, Forward |
1 V |
|
Voltage, Repetitive Peak |
1000 V |
|
關(guān)鍵詞 |