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SS3P4L-E3/86A - 

RECTIFIER; TO-277A (SMPC); 40V; 3A; SMD PLANAR SCHOTTKY

General Semiconductor / Vishay SS3P4L-E3/86A
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制造商產(chǎn)品編號:
SS3P4L-E3/86A
倉庫庫存編號:
70217452
技術(shù)數(shù)據(jù)表:
View SS3P4L-E3/86A Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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SS3P4L-E3/86A產(chǎn)品概述

Features:
  • Very Low Profile — Typical Height of 1.1 mm
  • Ideal for Automated Placement
  • Guardring for Overvoltage Protection
  • Low Forward Voltage Drop, Low Power Losses
  • High Efficiency
  • Low Thermal Resistance
  • Meets MSL level 1, per J-STD-020, LF M Maximum Peak of 260°C
  • Solder Dip 265°C max. 10 s, Per JESD 22-A111
  • Compliant to RoHS Directive 2002/95/EC and in Accordance to WEEE 2002/96/EC
  • Halogen-Free According to IEC 61249-2-21 Definition

    Applications:
    For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC-to-DC converters and polarity protection application.
  • SS3P4L-E3/86A產(chǎn)品信息

      Brand/Series  SS3 Series  
      Capacitance, Junction  280 pF  
      Configuration  Planar  
      Current, Forward, Continuous  3 A  
      Current, Peak  20 μA  
      Current, Reverse  26.7 mA  
      Current, Surge  150 A  
      Mounting Type  Through Hole  
      Package Type  TO-277A  
      Primary Type  Schottky Barrier  
      Temperature, Junction, Maximum  +150 °C  
      Temperature, Operating  -55 to +150 °C  
      Time, Reverse Recovery  35 ns  
      Voltage, Forward  0.335 V  
      Voltage, Repetitive Peak  40 V  
    關(guān)鍵詞         

    SS3P4L-E3/86A相關(guān)搜索

    Brand/Series SS3 Series  General Semiconductor / Vishay Brand/Series SS3 Series  Rectifier & Schottky Diodes Brand/Series SS3 Series  General Semiconductor / Vishay Rectifier & Schottky Diodes Brand/Series SS3 Series   Capacitance, Junction 280 pF  General Semiconductor / Vishay Capacitance, Junction 280 pF  Rectifier & Schottky Diodes Capacitance, Junction 280 pF  General Semiconductor / Vishay Rectifier & Schottky Diodes Capacitance, Junction 280 pF   Configuration Planar  General Semiconductor / Vishay Configuration Planar  Rectifier & Schottky Diodes Configuration Planar  General Semiconductor / Vishay Rectifier & Schottky Diodes Configuration Planar   Current, Forward, Continuous 3 A  General Semiconductor / Vishay Current, Forward, Continuous 3 A  Rectifier & Schottky Diodes Current, Forward, Continuous 3 A  General Semiconductor / Vishay Rectifier & Schottky Diodes Current, Forward, Continuous 3 A   Current, Peak 20 μA  General Semiconductor / Vishay Current, Peak 20 μA  Rectifier & Schottky Diodes Current, Peak 20 μA  General Semiconductor / Vishay Rectifier & Schottky Diodes Current, Peak 20 μA   Current, Reverse 26.7 mA  General Semiconductor / Vishay Current, Reverse 26.7 mA  Rectifier & Schottky Diodes Current, Reverse 26.7 mA  General Semiconductor / Vishay Rectifier & Schottky Diodes Current, Reverse 26.7 mA   Current, Surge 150 A  General Semiconductor / Vishay Current, Surge 150 A  Rectifier & Schottky Diodes Current, Surge 150 A  General Semiconductor / Vishay Rectifier & Schottky Diodes Current, Surge 150 A   Mounting Type Through Hole  General Semiconductor / Vishay Mounting Type Through Hole  Rectifier & Schottky Diodes Mounting Type Through Hole  General Semiconductor / Vishay Rectifier & Schottky Diodes Mounting Type Through Hole   Package Type TO-277A  General Semiconductor / Vishay Package Type TO-277A  Rectifier & Schottky Diodes Package Type TO-277A  General Semiconductor / Vishay Rectifier & Schottky Diodes Package Type TO-277A   Primary Type Schottky Barrier  General Semiconductor / Vishay Primary Type Schottky Barrier  Rectifier & Schottky Diodes Primary Type Schottky Barrier  General Semiconductor / Vishay Rectifier & Schottky Diodes Primary Type Schottky Barrier   Temperature, Junction, Maximum +150 °C  General Semiconductor / Vishay Temperature, Junction, Maximum +150 °C  Rectifier & Schottky Diodes Temperature, Junction, Maximum +150 °C  General Semiconductor / Vishay Rectifier & Schottky Diodes Temperature, Junction, Maximum +150 °C   Temperature, Operating -55 to +150 °C  General Semiconductor / Vishay Temperature, Operating -55 to +150 °C  Rectifier & Schottky Diodes Temperature, Operating -55 to +150 °C  General Semiconductor / Vishay Rectifier & Schottky Diodes Temperature, Operating -55 to +150 °C   Time, Reverse Recovery 35 ns  General Semiconductor / Vishay Time, Reverse Recovery 35 ns  Rectifier & Schottky Diodes Time, Reverse Recovery 35 ns  General Semiconductor / Vishay Rectifier & Schottky Diodes Time, Reverse Recovery 35 ns   Voltage, Forward 0.335 V  General Semiconductor / Vishay Voltage, Forward 0.335 V  Rectifier & Schottky Diodes Voltage, Forward 0.335 V  General Semiconductor / Vishay Rectifier & Schottky Diodes Voltage, Forward 0.335 V   Voltage, Repetitive Peak 40 V  General Semiconductor / Vishay Voltage, Repetitive Peak 40 V  Rectifier & Schottky Diodes Voltage, Repetitive Peak 40 V  General Semiconductor / Vishay Rectifier & Schottky Diodes Voltage, Repetitive Peak 40 V  
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