amphenol代理商
專(zhuān)業(yè)銷(xiāo)售Amphenol(安費(fèi)諾)全系列產(chǎn)品-英國(guó)2號(hào)倉(cāng)庫(kù)
庫(kù)存查詢(xún)
美國(guó)1號(hào)分類(lèi)選型新加坡2號(hào)分類(lèi)選型英國(guó)10號(hào)分類(lèi)選型英國(guó)2號(hào)分類(lèi)選型日本5號(hào)分類(lèi)選型

在本站結(jié)果里搜索:    
熱門(mén)搜索詞:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

FMH23N60E - 

IC, MOSFET; N-Channel, FAP-E3 Planar; 600V; 23A; 400W; TO-3P(Q)

Fuji Semiconductor FMH23N60E
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商產(chǎn)品編號(hào):
FMH23N60E
倉(cāng)庫(kù)庫(kù)存編號(hào):
70241495
技術(shù)數(shù)據(jù)表:
View FMH23N60E Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷(xiāo)售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!

FMH23N60E產(chǎn)品概述

Features:
  • Maintains Both Low Power Loss and Low Noise
  • Lower RDS(ON) Characteristic
  • More Controllable Switching dV/dt By Gate Resistance
  • Smaller VGS Ringing Waveform During Switching
  • Narrow Band of the Gate Threshold Voltage (3.0 ±0.5 V)
  • High Avalanche Durability
    Applications:
  • Switching Regulators
  • UPS
  • DC-DC Converters
  • FMH23N60E產(chǎn)品信息

      Capacitance, Input  4400 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  ±23 A  
      Dimensions  15.5 x 4.5 x 19.5 mm  
      Gate Charge, Total  130 nC  
      Height  0.768" (19.5mm)  
      Length  0.61" (15.5mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to 150 °C  
      Package Type  TO-3P  
      Polarization  N-Channel  
      Power Dissipation  400 W  
      Resistance, Drain to Source On  0.28 Ω  
      Resistance, Thermal, Junction to Case  0.313 °C/W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  50 °C/W  
      Time, Turn-Off Delay  144 ns  
      Time, Turn-On Delay  26 ns  
      Transconductance, Forward  28 S  
      Typical Gate Charge @ Vgs  130 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  600 V  
      Voltage, Drain to Source  600 V  
      Voltage, Forward, Diode  1.35 V  
      Voltage, Gate to Source  ±30 V  
      Voltage, Threshold  2.5-3.5 V  
      Width  0.177" (4.5mm)  
    關(guān)鍵詞         

    FMH23N60E相關(guān)搜索

    Capacitance, Input 4400 pF @ 25 V  Fuji Semiconductor Capacitance, Input 4400 pF @ 25 V  MOSFET Transistors Capacitance, Input 4400 pF @ 25 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 4400 pF @ 25 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±23 A  Fuji Semiconductor Current, Drain ±23 A  MOSFET Transistors Current, Drain ±23 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±23 A   Dimensions 15.5 x 4.5 x 19.5 mm  Fuji Semiconductor Dimensions 15.5 x 4.5 x 19.5 mm  MOSFET Transistors Dimensions 15.5 x 4.5 x 19.5 mm  Fuji Semiconductor MOSFET Transistors Dimensions 15.5 x 4.5 x 19.5 mm   Gate Charge, Total 130 nC  Fuji Semiconductor Gate Charge, Total 130 nC  MOSFET Transistors Gate Charge, Total 130 nC  Fuji Semiconductor MOSFET Transistors Gate Charge, Total 130 nC   Height 0.768" (19.5mm)  Fuji Semiconductor Height 0.768" (19.5mm)  MOSFET Transistors Height 0.768" (19.5mm)  Fuji Semiconductor MOSFET Transistors Height 0.768" (19.5mm)   Length 0.61" (15.5mm)  Fuji Semiconductor Length 0.61" (15.5mm)  MOSFET Transistors Length 0.61" (15.5mm)  Fuji Semiconductor MOSFET Transistors Length 0.61" (15.5mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor Operating and Storage Temperature -55 to 150 °C  MOSFET Transistors Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature -55 to 150 °C   Package Type TO-3P  Fuji Semiconductor Package Type TO-3P  MOSFET Transistors Package Type TO-3P  Fuji Semiconductor MOSFET Transistors Package Type TO-3P   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 400 W  Fuji Semiconductor Power Dissipation 400 W  MOSFET Transistors Power Dissipation 400 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 400 W   Resistance, Drain to Source On 0.28 Ω  Fuji Semiconductor Resistance, Drain to Source On 0.28 Ω  MOSFET Transistors Resistance, Drain to Source On 0.28 Ω  Fuji Semiconductor MOSFET Transistors Resistance, Drain to Source On 0.28 Ω   Resistance, Thermal, Junction to Case 0.313 °C/W  Fuji Semiconductor Resistance, Thermal, Junction to Case 0.313 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.313 °C/W  Fuji Semiconductor MOSFET Transistors Resistance, Thermal, Junction to Case 0.313 °C/W   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Fuji Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 50 °C/W  Fuji Semiconductor Thermal Resistance, Junction to Ambient 50 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 50 °C/W  Fuji Semiconductor MOSFET Transistors Thermal Resistance, Junction to Ambient 50 °C/W   Time, Turn-Off Delay 144 ns  Fuji Semiconductor Time, Turn-Off Delay 144 ns  MOSFET Transistors Time, Turn-Off Delay 144 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 144 ns   Time, Turn-On Delay 26 ns  Fuji Semiconductor Time, Turn-On Delay 26 ns  MOSFET Transistors Time, Turn-On Delay 26 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 26 ns   Transconductance, Forward 28 S  Fuji Semiconductor Transconductance, Forward 28 S  MOSFET Transistors Transconductance, Forward 28 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 28 S   Typical Gate Charge @ Vgs 130 nC @ 10 V  Fuji Semiconductor Typical Gate Charge @ Vgs 130 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 130 nC @ 10 V  Fuji Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 130 nC @ 10 V   Voltage, Breakdown, Drain to Source 600 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 600 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 600 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 600 V   Voltage, Drain to Source 600 V  Fuji Semiconductor Voltage, Drain to Source 600 V  MOSFET Transistors Voltage, Drain to Source 600 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 600 V   Voltage, Forward, Diode 1.35 V  Fuji Semiconductor Voltage, Forward, Diode 1.35 V  MOSFET Transistors Voltage, Forward, Diode 1.35 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.35 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Voltage, Threshold 2.5-3.5 V  Fuji Semiconductor Voltage, Threshold 2.5-3.5 V  MOSFET Transistors Voltage, Threshold 2.5-3.5 V  Fuji Semiconductor MOSFET Transistors Voltage, Threshold 2.5-3.5 V   Width 0.177" (4.5mm)  Fuji Semiconductor Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.177" (4.5mm)  
    電話:400-900-3095
    QQ:800152669
    關(guān)于我們 | Amphenol簡(jiǎn)介 | Amphenol產(chǎn)品 | Amphenol產(chǎn)品應(yīng)用 | Amphenol動(dòng)態(tài) | 按系列選型 | 按產(chǎn)品規(guī)格選型 | Amphenol選型手冊(cè) | 付款方式 | 聯(lián)系我們
    Copyright © 2017 training-know-how.com All Rights Reserved. 技術(shù)支持:電子元器件 ICP備案證書(shū)號(hào):粵ICP備11103613號(hào)